摘要:
A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
摘要翻译:使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5,一对GaN引导层41和62组成,其中活性层具有比有源层更宽的禁带,以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层,LD分别限制载流子和光。 每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。 结果,载流子被限制在有源层中,并且LD的激光输出被改善。
摘要:
A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
摘要:
A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &lgr; of emitted light.
摘要:
A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
摘要翻译:一种新颖的发光器件包括具有包含In x N Ga 1-X N的发光层的锡箔衬底,其中铟摩尔分数X的临界值为 通过铟摩尔分数X和发射光的波长λ之间的新衍生关系来确定。
摘要:
An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.
摘要翻译:改进的激光二极管由氮化镓化合物半导体((Al x Ga 1-x)y In 1-y N; 0 (c轴)平行的方向上切割多层涂层和蓝宝石衬底而形成的镜面。 通过用ZnO选择性液体蚀刻剂的湿蚀刻选择性地除去中间氧化锌(ZnO)层,以便在蓝宝石衬底和半导体激光元件层的最底层子层之间形成间隙。 借助于间隙切割半导体激光元件层,并将所得到的切割平面用作激光腔的镜面。
摘要:
A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译:提供一种发光二极管或激光二极管,其使用满足式(Al x Ga 1-x)y In 1-y N的III族氮化物化合物半导体,包括0≤x≤1,0≤y< = 1。 提供了一种双异质结结构,其在活性层之间具有更宽带隙的层之间夹持有源层。 二极管具有多层结构,其具有反射发射光的反射层或反射抑制层。 二极管的发射光在垂直于双异质结结构的方向上离开二极管。 在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。 此外,设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。 结果,光可以被发光二极管有效地发射。
摘要:
A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
摘要翻译:一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层(3a,3b)的方法,包括x = 0,y = 0和x = y = 0,以及 利用半导体层(3a,3b)之一作为基板(3)的LED(10)包括在蓝宝石基板(1)的每一侧上形成两个氧化锌(ZnO)中间层(2a,2b)的步骤, 形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层(3a,3b),包括x = 0,y = 0和x = y = 0,各层叠在每个中间ZnO层 ,2b),并且通过仅用于ZnO层(2a,2b)的蚀刻液蚀刻从中分离出中间ZnO层(2a,2b)和蓝宝石衬底(1)。 如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极(6,7)的相对侧上的n和p个MOVPE层(4,5),以形成在450nm区域中发射的LED,并且具有 器件电阻低。
摘要:
A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
摘要:
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译:本发明公开了一种SiC晶体,其包括:浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3,且大于受体杂质的浓度。 本发明公开了一种半导体器件,包括:具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。
摘要:
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.