摘要:
A semiconductor device reduces the impedance of a wiring for supplying the circuit excluding a data output circuit with a power source voltage or a ground voltage and of speedup of data signal transmission in the data output circuit. Additional substrates 2a, 2b are on the upper surface of semiconductor chip 1. First additional wiring layer for power source 10d and first additional wiring layer for ground 10s formed on respective additional substrates 2a, 2b form prescribed conductive areas on semiconductor chip 1. First power source wiring 40C1d or first ground wiring 40C1s are interconnected through additional wiring layers 10d and 10s. Second power source wiring 40C2d and second ground wiring 40C2s, which is extended in the same direction as with DQ system signal wiring 40CDQ, forms a feedback current path. Second power source wiring 40C2d and second ground wiring 40C2s are disposed adjacent to DQ system signal wiring 40CDQ.
摘要:
A semiconductor device reduces the impedance of a wiring for supplying the circuit excluding a data output circuit with a power source voltage or a ground voltage and of speedup of data signal transmission in the data output circuit. Additional substrates 2a, 2b are on the upper surface of semiconductor chip 1. First additional wiring layer for power source 10d and first additional wiring layer for ground 10s formed on respective additional substrates 2a, 2b form prescribed conductive areas on semiconductor chip 1. First power source wiring 40C1d or first ground wiring 40C1s are interconnected through additional wiring layers 10d and 10s. Second power source wiring 40C2d and second ground wiring 40C2s, which is extended in the same direction as with DQ system signal wiring 40CDQ, forms a feedback current path. Second power source wiring 40C2d and second ground wiring 40C2s are disposed adjacent to DQ system signal wiring 40CDQ.
摘要:
A wiring substrate and a semiconductor chip mounted on the wiring substrate are connected together via a bonding wire. The distance from each end of the semiconductor chip to a wire bond pad provided on the wiring substrate is smaller than the height of the semiconductor chip.
摘要:
The fixing device according to the embodiment includes a fixing member which is heated at predetermined temperature for a fixing, a press member which is configured to move relative to the fixing member and to contact with the fixing member so as to transport an image bearing medium by cooperating with the fixing member during a fixing, driving member which moves the fixing member and press member in a plurality of speeds including predetermined speed for during the fixing, pressure change member which is configured to change a pressure between the fixing member and the press member, and control member which controls the driving member and the pressure change member, when the fixing member and the press member are idle for fixing, to reduce the pressure and the speed of the fixing member and the press member compared with during the fixing.