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    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY INCLUDING RESIN CONTAINING ALICYCLIC RING AND AROMATIC RING
    1.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY INCLUDING RESIN CONTAINING ALICYCLIC RING AND AROMATIC RING 有权
    用于形成包含含有环氧树脂和芳族环的树脂的层压薄膜的组合物

    公开(公告)号：US20120142195A1

    公开(公告)日：2012-06-07

    申请号：US13389682

    申请日：2010-08-11

    申请人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

    发明人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

    IPC分类号： H01L21/311 ,  H01L21/312 ,  C08G65/332

    CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/094

    摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

    摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳​​香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。

    Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring
    2.
    发明授权
    Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring 有权
    用于形成光刻用抗蚀剂下层膜的组合物，包括含有脂环族环和芳环的树脂

    公开(公告)号：US08822138B2

    公开(公告)日：2014-09-02

    申请号：US13389682

    申请日：2010-08-11

    申请人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

    发明人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

    IPC分类号： G03F7/11 ,  H01L21/027 ,  C08G65/332 ,  G03F7/09 ,  G03F7/075

    CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/094

    摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

    摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳​​香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。

    Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group
    4.
    发明申请
    Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group 审中-公开
    含有保护性羧基的化合物的底图涂层组合物

    公开(公告)号：US20080102649A1

    公开(公告)日：2008-05-01

    申请号：US11795520

    申请日：2006-01-06

    申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

    发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

    IPC分类号： H01L21/31 ,  C09D4/00

    摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

    摘要翻译： 提供了用于光刻的底层涂层形成组合物，其用于制造半导体器件的光刻工艺中，并且与光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合，并且能够使 具有高纵横比的孔的半导体衬底。 用于光刻的下层涂层形成组合物包括具有两个或更多个保护的羧基的化合物，具有两个或更多个环氧基的化合物和溶剂。

    Underlayer Coating Forming Composition For Lithography Containing Cyclodextrin Compound
    6.
    发明申请
    Underlayer Coating Forming Composition For Lithography Containing Cyclodextrin Compound 有权
    含有环糊精化合物的平版印刷的底层涂层成型组合物

    公开(公告)号：US20070292767A1

    公开(公告)日：2007-12-20

    申请号：US11666342

    申请日：2005-10-25

    申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

    发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto

    IPC分类号： G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  Y10S430/111 ,  Y10S430/115

    摘要： There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.

    摘要翻译： 提供了一种用于光刻的底层涂层形成组合物，用于形成与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，不会与光致抗蚀剂混合，并且在光刻工艺中使用的半导体衬底上的填充孔性质优异 的半导体器件的制造。 该组合物包含环糊精中羟基总数的10〜90％转化为醚或酯基的环糊精化合物，交联化合物，交联催化剂和溶剂。

    COATING COMPOSITION AND PATTERN FORMING METHOD
    7.
    发明申请
    COATING COMPOSITION AND PATTERN FORMING METHOD 审中-公开
    涂料组合物和图案形成方法

    公开(公告)号：US20110117746A1

    公开(公告)日：2011-05-19

    申请号：US13054665

    申请日：2009-07-23

    申请人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

    发明人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

    IPC分类号： H01L21/31 ,  C09D183/04

    CPC分类号： H01L21/02282 ,  C08G77/04 ,  C08G77/60 ,  C08L83/04 ,  G03F7/405 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0337 ,  H01L21/3121 ,  H01L21/3122

    摘要： It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.

    摘要翻译： 本发明的目的是提供适用于“反转图案化”并适用于形成覆盖抗蚀剂图案的膜的涂料组合物。 该目的通过一种用于光刻的涂料组合物来实现，该涂料组合物包含有机聚硅氧烷，含有规定的有机溶剂作为主要成分的溶剂，以及季铵盐或季鏻盐; 或用于光刻的涂料组合物，其包含聚硅烷，含有规定的有机溶剂作为主要成分的溶剂和至少一种选自交联剂，季铵盐，季鏻盐和磺酸盐的添加剂 酸化合物，其中聚硅烷在其末端具有硅烷醇基或硅烷醇基以及氢原子。

    Method for manufacturing semiconductor device using quadruple-layer laminate
    8.
    发明授权
    Method for manufacturing semiconductor device using quadruple-layer laminate 有权
    使用四层层压制造半导体器件的方法

    公开(公告)号：US07842620B2

    公开(公告)日：2010-11-30

    申请号：US12311742

    申请日：2007-10-12

    申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

    发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

    摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

    摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。

    Carbazole novolak resin
    10.
    发明授权
    Carbazole novolak resin 有权
    咔唑酚醛清漆树脂

    公开(公告)号：US08722841B2

    公开(公告)日：2014-05-13

    申请号：US13377055

    申请日：2010-06-16

    申请人： Daigo Saito ,  Hiroaki Okuyama ,  Hideki Musashi ,  Tetsuya Shinjo ,  Keisuke Hashimoto

    发明人： Daigo Saito ,  Hiroaki Okuyama ,  Hideki Musashi ,  Tetsuya Shinjo ,  Keisuke Hashimoto

    IPC分类号： C08G59/40

    CPC分类号： H01L21/3081 ,  C08G12/26 ,  C08G16/02 ,  C08G61/12 ,  C08G73/0273 ,  C08G73/0672 ,  C08G2261/344 ,  C08L61/26 ,  C08L79/02 ,  C08L79/04 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0271

    摘要： There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

    摘要翻译： 提供了用于制造半导体器件中的光刻工艺的具有耐热性的抗蚀剂下层膜和用于电子器件的具有透明度的高折射率膜。 包含式（1）的单元结构的聚合物：其中R 1，R 2，R 3和R 5各自可以是氢原子，R 4可以是苯基或萘基。 包含聚合物的抗蚀剂下层膜形成组合物和由该组合物形成的抗蚀剂下层膜。 包含聚合物的高折射率成膜组合物和由该组合物形成的高折射率膜。