摘要:
The dielectric material includes a pre-baked powder containing Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, BaTiO.sub.3, and BaZrO.sub.3, and lead oxides alone or lead oxides and copper oxides in combination. Thus, the dielectric material is sintered at low temperatures of 800.degree.-1000.degree. C., and makes it possible to use inexpensive electrode materials such as copper, silver, and silver-palladium alloy for the electrode. The dielectric material also makes it possible to produce a ceramic condenser or a thin condenser having a stable capacitance irrespective of changes in temperature.
摘要:
Conductive paste for via connection of a multilayer ceramic substrate, comprising: an inorganic component which consists of 30.0 to 70.0% by weight of powder of conductive material and the remainder being one of glass powder having a softening point higher than a starting point of sintering of insulating material and crystalline glass ceramic powder having a glass transition point higher than the starting point of sintering of the insulating material; and an organics vehicle component which consists of at least organic binder and solvent.
摘要:
The invention relates to a dielectric ceramic composition that can be baked in a short time in the atmosphere, neutral atmosphere or reducing atmosphere at baking temperature of 800.degree. to 1000.degree. C. In the ceramic components expressed by PbTi.sub.X (Mg.sub.1/2 Nb.sub.2/3).sub.Y (Ni.sub.1/2 W.sub.1/2)ZO.sub.3 (where X+Y+Z=1), PbO is added by 1.0 to 25.0 mol % and NiO by 1.0 to 15.0 mol % as subsidiary components, to the temporarily baked powder of the main component dielectric ceramic composition composed in the pentagonal region having the vertices at compositions A, B, C, D, E expressed by numerical values in the following square brackets, in the system of trigonometric coordinates having the vertices at PbTiO.sub.3, Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 and Pb(Ni.sub.1/2 W.sub.1/2)O.sub.3,A is x=2.5, y=9.5, z=2.5;B is x=12.5, y=85.0, z=2.5,C is x=60.0, y=10.0, z=30.0,D is x=40.0, y=10.0, z=50.0,E is x=2.5, y=90.0, z=7.5 (where all untis are mol %)so that a laminate ceramic capacitor or thick film capacitor of large capacity that can be baked densely in a short time at low baking temperature of below 1000.degree. C. will be obtained.
摘要:
A method of manufacturing solid electrolytic capacitors that can be directly connected to semiconductor components and have a faster response to a high frequency as well as a larger capacitance includes: a dielectric forming stage where a valve metal sheet (2) is made porous and a dielectric coating (7) is provided on the porous face (3); an element forming stage where a solid electrolytic layer (8) and a collector layer (10) are formed on the dielectric coating (7); and a terminal forming stage where a connecting terminal (16) for connecting to an external electrode is formed. The element forming stage includes the steps of forming the solid electrolytic layer (8); a forming through-hole electrode (9) in a through-hole (5) that is prepared on the valve metal sheet (2); and forming the collector (10) on the solid electrolytic layer (8).
摘要:
A solid electrolytic capacitor having a high capacitance and excellent high frequency response including a valve metal sheet which is made porous, a dielectric layer formed on the porous portion, a solid electrolyte layer formed on the dielectric layer, a collector layer and an electrode exposure area formed on the solid electrolyte layer, and an insulating section electrically insulating the electrode exposure area from the collector layer, in which the electrode exposure area and the collector layer are formed on the same surface of the valve metal sheet.
摘要:
The invention relates to a chip resistor which is used as a circuit part for various electric apparatuses. The object of the invention is to realize a low resistance and a low TCR, and also high accuracy and high reliability. In order to achieve the object, a chip resistor is configured so as to have: a substrate; a resistance layer which is formed on at least one face of the substrate and which is made of a copper nickel alloy; upper-face electrode layers which make surface contact with the upper faces of both the end portions of the resistance layer; and end-face electrodes which are formed so as to cover the upper-face electrode layers. Since the bonding between the resistance layer and the upper-face electrode layers is conducted by metal-to-metal bonding, particularly, impurities which may affect the Properties do not exist in the interface. As a result, it is possible to realize a chip resistor which is excellent in heat resistance, and which has a low resistance and a low TCR.
摘要:
According to the invention, the method of manufacturing a module component comprises an inserting step of inserting a chip component in a first molding die; a primary molding step of filling the first molding die with resin with a first end electrode of the chip component exposed; a peeling step of peeling the first molding die at a side of inserting the chip component; a secondary molding step of filling a second molding die with resin with a second end electrode of the chip component; and a forming step of forming a circuit wiring on one side or both sides of a molded element molded with resin, wherein the chip component is disposed according to a specified rule, and the chip component is molded with the resin.
摘要:
A solid electrolytic capacitor includes a valve metal sheet having a porous portion on one side of the sheet, a dielectric layer formed on the porous portion, a solid electrolyte layer formed on the dielectric layer, a collector layer formed on the solid electrolyte layer, a through-hole electrode connected to the collector layer and penetrating the valve metal sheet to be exposed to the other side of the sheet, and an electrode terminal insulated from the through-hole electrode and connected to the valve metal sheet. The capacitor further includes an insulating portion penetrating the valve metal sheet and a penetration electrode penetrating the insulating portion. The solid electrolytic capacitor has a large capacitance and an excellent radio frequency response, and can be easily mounted on a semiconductor device.
摘要:
A solid electrolytic capacitor includes a bulb-metal sheet of which first face has a porous section. A dielectric film, a solid electrolyte layer, and a current-collecting layer are formed in this order on the porous section. On top of the current-collecting layer, a reinforcing plate is bonded. A second face opposite to the first face of the sheet has a connecting terminal conductive to the current-collecting layer. This connecting terminal is coupled to a through-hole electrode which extends through the bulb-metal sheet for appearing outside the second face. The second face has another connecting terminal conductive to the bulb-metal sheet. This structure makes the capacitor thin, and allows the capacitor to increase its stress-resistance and be excellent in responsiveness to a high frequency as well as in mounting convenience.
摘要:
A dielectric layer is formed on a surface of a porous portion formed at least on a surface of a valve metal sheet. A solid electrolyte layer is formed on the dielectric layer, and a collector layer is formed on the solid electrolyte layer. A first insulating portion is formed on an outer periphery of the dielectric layer, and a solid electrolyte layer is formed on a portion of the dielectric layer corresponding to an opening of the first insulating portion. A portion of the solid electrolyte layer is formed on the first insulating portion. A second insulating portion is formed on the first insulating portion and on the outer periphery of the solid electrolyte layer. A collector layer is formed on a surface of the solid electrolyte layer exposed through an opening of the second insulating portion, thus providing a solid electrolytic capacitor. The solid electrolytic capacitor has less current leakage and a high withstand voltage.