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    VERTICAL CELL-TYPE SEMICONDUCTOR DEVICE HAVING PROTECTIVE PATTERN
    2.
    发明申请
    VERTICAL CELL-TYPE SEMICONDUCTOR DEVICE HAVING PROTECTIVE PATTERN 审中-公开
    具有保护图案的垂直细胞型半导体器件

    公开(公告)号：US20160149010A1

    公开(公告)日：2016-05-26

    申请号：US15012979

    申请日：2016-02-02

    申请人： Jin-Yeon WON ,  Joon-Hee LEE ,  Seung-Woo PAEK ,  Dong-Seog EUN

    发明人： Jin-Yeon WON ,  Joon-Hee LEE ,  Seung-Woo PAEK ,  Dong-Seog EUN

    IPC分类号： H01L29/423 ,  H01L29/792 ,  H01L27/115

    CPC分类号： H01L29/42344 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： According to example embodiments of inventive concepts, a semiconductor device includes: a substrate, and a stacked structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate. The stacked structure defines a through-hole over the substrate. The gate electrodes each include a first portion between the through-hole and a second portion of the gate electrodes. A channel pattern may be in the through-hole. A tunneling layer may surround the channel pattern. A charge trap layer may surround the tunneling layer, and protective patterns may surround the first portions of the gate electrodes. The protective patterns may be between the first portions of the gate electrodes and the charge trap layer.

    摘要翻译： 根据本发明构思的示例性实施例，半导体器件包括：衬底，以及包括层间绝缘层和交替层叠在衬底上的栅电极的堆叠结构。 堆叠结构在衬底上限定通孔。 栅电极各自包括在通孔和栅电极的第二部分之间的第一部分。 通道图案可以在通孔中。 隧道层可围绕通道图案。 电荷陷阱层可围绕隧道层，并且保护图案可围绕栅电极的第一部分。 保护图案可以在栅电极的第一部分和电荷陷阱层之间。

    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    3.
    发明申请
    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    垂直存储器件及其制造方法

    公开(公告)号：US20150137216A1

    公开(公告)日：2015-05-21

    申请号：US14534181

    申请日：2014-11-06

    申请人： Seok-Won LEE ,  Joon-Hee LEE ,  Dong-Seog EUN ,  Chang-Hyun LEE

    发明人： Seok-Won LEE ,  Joon-Hee LEE ,  Dong-Seog EUN ,  Chang-Hyun LEE

    IPC分类号： H01L27/115 ,  G11C5/06

    CPC分类号： H01L27/11582 ,  G11C5/063 ,  G11C8/14 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

    摘要： A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a substrate. A plurality of the gate lines are stacked in the first direction to be spaced apart from each other and extend in a second, lengthwise direction, each gate line intersecting a set of channels and surrounding outer sidewalls of each channel of the set of channels. The gate lines forms a stepped structure which includes a plurality of vertical levels. A connecting portion connects a group of gate lines of the plurality of gate lines located at the same vertical level, the connecting portion diverging from the second direction in which the gate lines of the group of gate lines extend.

    摘要翻译： 垂直存储器件包括衬底，通道，栅极线和连接部分。 多个通道在与基板的顶表面垂直的第一方向上延伸。 多个栅极线在第一方向上被堆叠以彼此间隔开并且在第二长度方向上延伸，每个栅极线与通道组的每组通道的每个通道的外侧壁相交。 栅极线形成包括多个垂直电平的阶梯结构。 连接部分连接位于相同垂直高度的多条栅极线的一组栅极线，该连接部分从栅极线组的栅极线延伸的第二方向发散。

    WIRING STRUCTURES
    4.
    发明申请
    WIRING STRUCTURES 审中-公开
    接线结构

    公开(公告)号：US20120318567A1

    公开(公告)日：2012-12-20

    申请号：US13495216

    申请日：2012-06-13

    申请人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Joon-Hee LEE ,  Jai-Hyuk SONG ,  Sang-Youn JO

    发明人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Joon-Hee LEE ,  Jai-Hyuk SONG ,  Sang-Youn JO

    IPC分类号： H05K1/11 ,  H05K1/02 ,  H05K1/09

    CPC分类号： H01L23/522 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A wiring structure includes a first plug extending through a first insulating interlayer on a substrate, a first wiring extending through a second insulating interlayer on the first insulating interlayer and the first wiring is electrically connected to the first plug, a diffusion barrier layer pattern on the first wiring and on the second insulating interlayer, a portion of the second insulating interlayer being free of being covered by the diffusion barrier layer pattern, a second plug extending through the diffusion barrier layer pattern, the second plug is in contact with the first wiring, and a second wiring electrically connected to the second plug.

    摘要翻译： 布线结构包括延伸穿过基板上的第一绝缘夹层的第一插塞，延伸穿过第一绝缘夹层上的第二绝缘夹层的第一布线和第一布线电连接到第一插头，扩散阻挡层图案 第一布线并且在第二绝缘中间层上，第二绝缘中间层的一部分不被扩散阻挡层图案覆盖，延伸穿过扩散阻挡层图案的第二插塞，第二插塞与第一布线接触， 以及电连接到第二插头的第二布线。

    VERTICAL CELL-TYPE SEMICONDUCTOR DEVICE HAVING PROTECTIVE PATTERN
    6.
    发明申请
    VERTICAL CELL-TYPE SEMICONDUCTOR DEVICE HAVING PROTECTIVE PATTERN 有权
    具有保护图案的垂直细胞型半导体器件

    公开(公告)号：US20140284695A1

    公开(公告)日：2014-09-25

    申请号：US14151288

    申请日：2014-01-09

    申请人： Jin-Yeon WON ,  Joon-Hee LEE ,  Seung-Woo PAEK ,  Dong-Seog EUN

    发明人： Jin-Yeon WON ,  Joon-Hee LEE ,  Seung-Woo PAEK ,  Dong-Seog EUN

    IPC分类号： H01L29/792

    CPC分类号： H01L29/42344 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： According to example embodiments of inventive concepts, a semiconductor device includes: a substrate, and a stacked structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate. The stacked structure defines a through-hole over the substrate. The gate electrodes each include a first portion between the through-hole and a second portion of the gate electrodes. A channel pattern may be in the through-hole. A tunneling layer may surround the channel pattern. A charge trap layer may surround the tunneling layer, and protective patterns may surround the first portions of the gate electrodes. The protective patterns may be between the first portions of the gate electrodes and the charge trap layer.

    摘要翻译： 根据本发明构思的示例性实施例，半导体器件包括：衬底，以及包括层间绝缘层和交替层叠在衬底上的栅电极的堆叠结构。 堆叠结构在衬底上限定通孔。 栅电极各自包括在通孔和栅电极的第二部分之间的第一部分。 通道图案可以在通孔中。 隧道层可围绕通道图案。 电荷陷阱层可围绕隧道层，并且保护图案可围绕栅电极的第一部分。 保护图案可以在栅电极的第一部分和电荷陷阱层之间。

    APPARATUS AND METHOD FOR CONTROLLING DEVICES USING PORTABLE TERMINAL IN DEVICE AUTOMATION SYSTEM
    7.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING DEVICES USING PORTABLE TERMINAL IN DEVICE AUTOMATION SYSTEM 审中-公开
    在设备自动化系统中使用便携式终端来控制设备的装置和方法

    公开(公告)号：US20120272062A1

    公开(公告)日：2012-10-25

    申请号：US13090717

    申请日：2011-04-20

    申请人： Joon-Hee LEE ,  Kwon-Soo CHANG

    发明人： Joon-Hee LEE ,  Kwon-Soo CHANG

    IPC分类号： H04L9/32 ,  G06F15/16

    CPC分类号： G08C17/02 ,  G08C2201/40 ,  G08C2201/50 ,  G08C2201/93 ,  H04L12/282

    摘要： A method is provided for controlling a device by a portable terminal in a device automation system. Upon detecting an execution request for a single remote control mode for remotely controlling a device, the portable terminal sends a single remote control mode execution request message for requesting to execute the single remote control mode, to the device. Upon receiving from the device a single remote control mode execution response message being responsive to the single remote control mode execution request message, the portable terminal switches an operation mode thereof to the single remote control mode. Upon receiving from the device a device data message including device data output by the device, the portable terminal outputs the device data. Upon detecting a remote control command to remotely control the device while outputting the device data, the portable terminal sends a remote control message including the remote control command to the device.

    摘要翻译： 提供了一种用于通过设备自动化系统中的便携式终端来控制设备的方法。 在检测到用于远程控制设备的单个远程控制模式的执行请求时，便携式终端向设备发送用于请求执行单个远程控制模式的单个远程控制模式执行请求消息。 在从设备接收到响应于单个远程控制模式执行请求消息的单个远程控制模式执行响应消息时，便携式终端将其操作模式切换到单个远程控制模式。 在从设备接收到包括由设备输出的设备数据的设备数据消息时，便携式终端输出设备数据。 当检测到远程控制命令以在输出设备数据的同时远程控制设备时，便携式终端向设备发送包括远程控制命令的遥控消息。