公开(公告)号：US11688836B2

公开(公告)日：2023-06-27

申请号：US17504541

申请日：2021-10-19

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jong Min Lee ,  Bang Hyun Kim ,  Jae Ho Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/504 ,  H01L25/0753 ,  H01L33/483 ,  H01L33/60

Abstract: A light emitting module including a substrate, a first light emitting part disposed on the substrate, and a second light emitting part disposed on the substrate and spaced apart from the first light emitting part by an isolation trench between the first and the second light emitting parts, in which the first light emitting part and the second light emitting part include a first light emitting region and a second light emitting region, respectively, the second light emitting region being spaced apart from the first light emitting region, each of the first and second light emitting parts further includes a wavelength conversion layer covering the first and second light emitting regions, the wavelength conversion layers further include a barrier layer, and the isolation trench and the barrier layer vertically overlap each other on the base substrate.

公开(公告)号：US11171264B2

公开(公告)日：2021-11-09

申请号：US16498818

申请日：2018-03-19

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jong Min Lee ,  Bang Hyun Kim ,  Jae Ho Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/48 ,  H01L33/60

Abstract: A light emitting module including a base substrate, a first light emitting diode disposed on the base substrate, and a second light emitting diode disposed on the base substrate and spaced apart from the first light emitting diode, in which each of the first light emitting diode and the second light emitting diode includes a first light emitting region and a second light emitting region, the second light emitting region being spaced apart from the first light emitting region and surrounding the first light emitting region.

公开(公告)号：US09419186B2

公开(公告)日：2016-08-16

申请号：US14173287

申请日：2014-02-05

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jung Hwa Jung ,  Bang Hyun Kim

IPC: H01L33/50 ,  H01L33/06 ,  H01L25/075 ,  H01L33/44

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.

Abstract translation: 本发明的一个示例性实施例公开了一种包括半导体层叠结构的发光二极管（LED）芯片，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，第一电极设置在 半导体堆叠结构，设置在半导体堆叠结构上的波长转换层和布置在波长转换层上的透明树脂。

公开(公告)号：US20220109088A1

公开(公告)日：2022-04-07

申请号：US17504541

申请日：2021-10-19

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jong Min Lee ,  Bang Hyun Kim ,  Jae Ho Lee

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/48 ,  H01L33/60

Abstract: A light emitting module including a substrate, a first light emitting part disposed on the substrate, and a second light emitting part disposed on the substrate and spaced apart from the first light emitting part by an isolation trench between the first and the second light emitting parts, in which the first light emitting part and the second light emitting part include a first light emitting region and a second light emitting region, respectively, the second light emitting region being spaced apart from the first light emitting region, each of the first and second light emitting parts further includes a wavelength conversion layer covering the first and second light emitting regions, the wavelength conversion layers further include a barrier layer, and the isolation trench and the barrier layer vertically overlap each other on the base substrate.

公开(公告)号：US10060579B2

公开(公告)日：2018-08-28

申请号：US14362393

申请日：2012-11-30

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Eun Ju Kim ,  Bang Hyun Kim ,  Young Eun Yang

IPC: F21K99/00 ,  F21V13/04 ,  F21V13/02 ,  F21V5/04 ,  H01L33/58 ,  G02B19/00 ,  G02B5/02 ,  F21K9/60 ,  F21K9/64 ,  F21Y115/10

CPC classification number: F21K9/60 ,  F21K9/64 ,  F21V5/04 ,  F21V5/045 ,  F21V5/048 ,  F21V13/02 ,  F21V13/04 ,  F21Y2115/10 ,  G02B5/021 ,  G02B5/0268 ,  G02B19/0014 ,  G02B19/0028 ,  G02B19/0066 ,  H01L33/58

Abstract: A light emitting module includes a light emitting diode chip and a lens. The lens includes a lower surface having a concave portion. The lens also includes an upper surface from which light incident on the concave portion is emitted. The upper surface of the lens includes a concave surface positioned in a central axis thereof. The concave portion of the lower surface includes at least one of a surface perpendicular to the central axis and a downwardly convex surface. At least one of the surface perpendicular to the central axis and the downwardly convex surface is positioned in a region narrower than an entrance region of the concave portion.

公开(公告)号：US10043955B2

公开(公告)日：2018-08-07

申请号：US15703725

申请日：2017-09-13

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jung Hwa Jung ,  Bang Hyun Kim

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/46 ,  H01L33/56 ,  H01L25/075 ,  H01L33/44

Abstract: A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

公开(公告)号：US09793448B2

公开(公告)日：2017-10-17

申请号：US15236125

申请日：2016-08-12

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jung Hwa Jung ,  Bang Hyun Kim

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/46 ,  H01L33/56 ,  H01L25/075 ,  H01L33/44

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

公开(公告)号：US20160351759A1

公开(公告)日：2016-12-01

申请号：US15236125

申请日：2016-08-12

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Jung Hwa JUNG ,  Bang Hyun Kim

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/46

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

Abstract translation: 发光二极管（LED）包括衬底，设置在衬底上的半导体堆叠结构，包括第一导电型半导体层，有源层和第二导电类型半导体层的半导体层叠结构，波长转换 层，被配置为转换从半导体堆叠结构发射的光的波长，覆盖衬底的侧表面的波长转换层和半导体堆叠结构;以及分布式布拉格反射器（DBR），其被配置为反射至少一部分光波长 - 由波长转换层转换，其中至少一部分DBR被配置为反射透射通过DBR的光的金属层覆盖。

公开(公告)号：US11005006B2

公开(公告)日：2021-05-11

申请号：US16535268

申请日：2019-08-08

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Bang Hyun Kim ,  Young Hye Seo ,  Jae Ho Lee ,  Jong Min Lee ,  Seoung Ho Jung ,  Eui Sung Jeong

IPC: H01L33/08 ,  H01L33/60 ,  G02B3/08 ,  H01L33/20 ,  H01L33/50 ,  F21V8/00

Abstract: A light emitting diode including a first light emitting region, and a second light emitting region spaced apart from and surrounding the first light emitting region, in which the first light emitting region and the second light emitting region are configured to be independently operated.

公开(公告)号：US09929330B2

公开(公告)日：2018-03-27

申请号：US15276545

申请日：2016-09-26

Applicant: Seoul Semiconductor Co., Ltd.

Inventor： Bang Hyun Kim

IPC: H01L33/64 ,  H01L33/48 ,  H01L27/15 ,  H01L25/075 ,  H01L25/16 ,  H01L33/62 ,  H01L27/02 ,  H01L29/866 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L33/642 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/866 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/56 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0033 ,  H01L2924/00014

Abstract: A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.