摘要:
In the method, a conductive pad of the board is etched to a depth that is greater than 50% and less than 100% of a thickness of the conductive pad. Subsequently, a solder ball may be formed on the etched conductive pad. For example, the conductive pad may be copper.
摘要:
In the method, a conductive pad of the board is etched to a depth that is greater than 50% and less than 100% of a thickness of the conductive pad. Subsequently, a solder ball may be formed on the etched conductive pad. For example, the conductive pad may be copper.
摘要:
A robotic cellular phone is disclosed. The robotic cellular phone includes a self-environmental recognition function part, a mobility function part, and an emotion function part. The self-environmental recognition function part is for recognizing an external environment by a photo sensor for a sensing luminosity of a surrounding device; a temperature sensor for sensing temperatures of the surrounding device; and a touch sensor for sensing a touch between a human and the surrounding device. The mobility function part is for moving the antenna to an optimum location to increase a sending or receiving signal sensitivity and for opening and closing a folder by using a plurality of wheels formed on a part of rechargeable battery. The emotion function part is for identifying a sender by comparing data between sender telephone information included a receiving signal and a telephone data stored in an internal memory; and for making a different vibration according to an emotional pattern by modeling a frequency of a vibrator based on a major or minor key harmony or for spraying perfume through a micro-nozzle.
摘要:
A gain-clamped semiconductor optical amplifier is disclosed. The amplifier includes a gain waveguide for amplifying an optical signal input to the gain waveguide, and a grating layer, in contact with the gain waveguide, having a first grating disposed at a first end portion.
摘要:
Disclosed is an optical connection structure of half-duplex transmission type and an optical device suitable for the same. The optical connection structure of half-duplex type comprises two or more signal transmitting/receiving units, which are interconnected through an optical waveguide, wherein each of the signal transmitting/receiving units comprises an optical device having a light source for producing and emitting optical signals to the outside through an opening, and a photodetector for receiving the optical signals incident thereto and converting the optical signals into electric signals, the light source and the photodetector being integrated with each other; and a control unit, which in the signal transmitting mode, drives the light source, so that the corresponding signal transmitting/receiving unit functions as a light source, and in the signal receiving mode, drives the photodetector, so that the corresponding signal transmitting/receiving unit functions as a photodetector.
摘要:
A Raman optical amplifier includes a fiber amplifier for Raman-amplifying an input optical signal to form a primarily-amplified optical signal, and a semiconductor optical amplifier for outputting a Raman pumping light of a predetermined wavelength adapted to Raman-pump the fiber amplifier, while amplifying the primarily-amplified optical signal to form a secondarily-amplified optical signal. A circulator allows the fiber and semiconductor amplifiers to communicate the lights and signals and operates with fiber grating, which acts as a filter, to output the secondarily-amplified optical signal
摘要:
A gain-clamped semiconductor optical amplifier is disclosed. The amplifier includes a gain waveguide for amplifying an optical signal input to the gain waveguide, and a grating layer, in contact with the gain waveguide, having a first grating disposed at a first end portion.
摘要:
A broad-band light source using a semiconductor optical amplifier is provided. The broad-band light source includes the semiconductor optical amplifier including an active layer serving as a gain area, an under-cladding layer, an over-cladding layer, and antireflection layers formed at both ends of the active layer; and a reflector, located at the outside of the semiconductor optical amplifier, for reflecting light outputted from the semiconductor optical amplifier so that the reflected light is inputted back to the active layer so as to minimize gain ripple of the semiconductor optical amplifier.
摘要:
Disclosed is an antenna using a reactive element that is capable of individually controlling the respective resonance frequencies and resonance bandwidths. The antenna includes a radiator electrically coupled with a feeding point, a first reactive element electrically coupling a first point and a second point of the radiator, and a second reactive element electrically coupling a third point and a fourth point of the radiator. Here, the reactive elements are each coupled to the radiator in parallel, and because of the reactive elements, the antenna is made to have higher-order resonance frequencies that are not integer multiple in relation to a fundamental resonance frequency.
摘要:
Disclosed herein is a laptop-size high-order harmonic generation apparatus using near field enhancement. The laptop-size high-order harmonic generation apparatus using near field enhancement includes a femtosecond laser generator, light transfer means for transferring light output from the femtosecond laser generator, micro patterns formed of metallic thin films and configured to have nano-sized apertures for generating near field enhancement when the light output from the light transfer means passes through the micro patterns, a gas supply unit for supplying inert gas to the light when the light transferred through the light transfer means passes through the micro patterns, and a vacuum chamber for accommodating the micro patterns and the gas supply unit under a vacuum atmosphere.