公开(公告)号：US06660627B2

公开(公告)日：2003-12-09

申请号：US10063133

申请日：2002-03-25

申请人： Shao-Chung Hu ,  Hsueh-Chung Chen ,  Shih-Hsun Hsu ,  Chia-Lin Hsu

发明人： Shao-Chung Hu ,  Hsueh-Chung Chen ,  Shih-Hsun Hsu ,  Chia-Lin Hsu

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/31051

摘要： A method for planarization of a semiconductor wafer with a high selectivity is describe. The semiconductor wafer has a hard mask, a stop layer disposed on the hard mask, and a barrier layer disposed on the stop layer. The method includes performing a chemical mechanical polishing (CMP) process on the barrier layer so as to expose the stop layer, and removing the stop layer. The polishing selectivity of the barrier layer relative to the stop layer is greater than 50. Since the material of stop layer is different from the material of barrier layer, the high selectivity is easily achieved. Thus, the surface of semiconductor wafer can be highly planarized.

摘要翻译： 描述了一种以高选择性平坦化半导体晶片的方法。 半导体晶片具有硬掩模，设置在硬掩模上的阻挡层和设置在阻挡层上的阻挡层。 该方法包括在阻挡层上进行化学机械抛光（CMP）处理，以露出停止层，并除去停止层。 阻挡层相对于停止层的抛光选择性大于50.由于阻挡层的材料与阻挡层的材料不同，因此容易实现高选择性。 因此，半导体晶片的表面可以被高度平坦化。

公开(公告)号：US06709544B2

公开(公告)日：2004-03-23

申请号：US10064526

申请日：2002-07-24

申请人： Shao-Chung Hu ,  Chia-Lin Hsu ,  Hsueh-Chung Chen ,  Shih-Hsun Hsu

发明人： Shao-Chung Hu ,  Chia-Lin Hsu ,  Hsueh-Chung Chen ,  Shih-Hsun Hsu

IPC分类号： B24B700

CPC分类号： B24B37/20 ,  B24B37/042

摘要： The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, leading to high throughput and efficient production management. The present invention provides a CMP equipment that offers greater flexibility in performing CMP for different fabrication processes through the choices of various polishing pads and/or polishing slurry.

摘要翻译： 本发明涉及与现有制造工艺兼容的CMP设备。 本发明的CMP设备采用可以比晶片尺寸小的带状抛光压板，使得布局紧凑并且有效地利用空间，导致高产量和高效的生产管理。 本发明提供一种CMP设备，其通过选择各种抛光垫和/或抛光浆料，为不同的制造工艺执行CMP提供更大的灵活性。

公开(公告)号：US06638391B1

公开(公告)日：2003-10-28

申请号：US10177306

申请日：2002-06-19

申请人： Chia-Lin Hsu ,  Art Yu ,  Shih-Hsun Hsu ,  Hsueh-Chung Chen

发明人： Chia-Lin Hsu ,  Art Yu ,  Shih-Hsun Hsu ,  Hsueh-Chung Chen

IPC分类号： H01L21302

CPC分类号： B24B37/30

摘要： A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.

摘要翻译： 提供了一种用于化学机械抛光装置的晶片载体组件和使用其的抛光方法。 本晶片载体组件包括第一板，第二板和柔性膜。 第一板具有在其底表面上形成的多个突起，并且第二板具有穿过的多个孔。 每个突起与其中一个孔匹配，以使得第一板和第二板能够可拆卸地组合在一起。 柔性膜定位在第二板下方并与其接触。 与柔性膜的与第二板接触的表面相对的柔性膜的表面提供了晶片接收表面。

公开(公告)号：US06797190B2

公开(公告)日：2004-09-28

申请号：US10383983

申请日：2003-03-06

申请人： Chia-Lin Hsu ,  Art Yu ,  Shih-Hsun Hsu ,  Hsueh-Chung Chen

发明人： Chia-Lin Hsu ,  Art Yu ,  Shih-Hsun Hsu ,  Hsueh-Chung Chen

IPC分类号： B24D1100

CPC分类号： B24B37/30

摘要： A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.

摘要翻译： 提供了一种用于化学机械抛光装置的晶片载体组件和使用其的抛光方法。 本晶片载体组件包括第一板，第二板和柔性膜。 第一板具有在其底表面上形成的多个突起，并且第二板具有穿过的多个孔。 每个突起与其中一个孔匹配，以使得第一板和第二板能够可拆卸地组合在一起。 柔性膜定位在第二板下方并与其接触。 与柔性膜的与第二板接触的表面相对的柔性膜的表面提供了晶片接收表面。

公开(公告)号：US06696361B2

公开(公告)日：2004-02-24

申请号：US09854006

申请日：2001-05-10

申请人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

发明人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

IPC分类号： H01L214763

CPC分类号： H01L21/02074 ,  H01L21/3212

摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

摘要翻译： 化学机械抛光（CMP）后从硅晶片去除污染物的方法。 在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。 或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。 或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

公开(公告)号：US06706140B2

公开(公告)日：2004-03-16

申请号：US09682486

申请日：2001-09-07

申请人： Chia-Lin Hsu ,  Shao-Chung Hu ,  Teng-Chun Tsai

发明人： Chia-Lin Hsu ,  Shao-Chung Hu ,  Teng-Chun Tsai

IPC分类号： B24B4900

CPC分类号： B24B37/04 ,  B24B49/10 ,  B24B57/02 ,  H01L21/30625

摘要： A chemical mechanical polishing (CMP) machine has a polish platen, having at least a first ring-shaped region and a second ring-shaped region. A control system for in-situ feeding back a polish profile of the CMP machine has at least a first sensor and a second sensor, respectively installed in the first and the second ring-shaped regions, and a control unit electrically connected to the first sensor and the second sensor for comparing the polish rates of portions of the wafer over the first and the second ring-shaped regions, respectively, according to signals of the first and the second sensors, and adjusting amounts of a slurry supplied by first and second slurry pump valves, corresponding to the first and second ring-shaped regions, according to a predetermined process, or adjusting forces loaded to the first and second regions of the wafer according to the predetermined process.

摘要翻译： 化学机械抛光（CMP）机器具有抛光台板，具有至少第一环形区域和第二环形区域。 用于原位反馈CMP机的抛光轮廓的控制系统具有分别安装在第一和第二环形区域中的至少第一传感器和第二传感器，以及电连接到第一传感器的控制单元 以及第二传感器，用于根据第一和第二传感器的信号分别比较第一和第二环形区域上的部分晶片的抛光速率，以及调节由第一和第二浆料供应的浆料的量 根据预定过程对应于第一和第二环形区域的泵阀，或根据预定过程加载到晶片的第一和第二区域的调节力。

公开(公告)号：US07232752B2

公开(公告)日：2007-06-19

申请号：US10603924

申请日：2003-06-24

申请人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

发明人： Shao-Chung Hu ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Yung-Tsung Wei

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/3212 ,  H01L21/02074

摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

摘要翻译： 化学机械抛光（CMP）后从硅晶片去除污染物的方法。 在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。 或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。 或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

公开(公告)号：US08828745B2

公开(公告)日：2014-09-09

申请号：US13176790

申请日：2011-07-06

申请人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

发明人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

IPC分类号： H01L21/66 ,  H01L21/306 ,  H01L21/304 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.

摘要翻译： 一种制造TSV的方法，其中该方法包括以下几个步骤：提供具有基板和ILD层（层间电介质层）的堆叠结构，其中穿透ILD层并进一步延伸到基板中的开口是 形成。 在堆叠结构和开口的侧壁上形成绝缘体层和金属阻挡层之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在阻挡层上的第一平面化处理以去除顶部金属层的一部分。 随后进行停止在ILD层上的第二平坦化处理以去除金属阻挡层的一部分，绝缘体层的一部分和顶部金属层的一部分，其中第二平坦化工艺具有由光线确定的抛光终点 干涉测量或电机电流。

公开(公告)号：US08779526B2

公开(公告)日：2014-07-15

申请号：US13283603

申请日：2011-10-28

申请人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

发明人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

IPC分类号： H01L29/78

CPC分类号： H01L27/0629

摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有晶体管区域和电阻器区域的衬底; 在电阻器区域的衬底上形成浅沟槽隔离（STI）; 在电阻区域的STI中形成槽; 并且在罐中形成电阻器，并且在与槽的两侧相邻的STI的表面上形成电阻器。

公开(公告)号：US08513128B2

公开(公告)日：2013-08-20

申请号：US13162776

申请日：2011-06-17

申请人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

发明人： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

IPC分类号： H01L21/304 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31053 ,  H01L21/02065 ,  H01L29/517 ,  H01L29/66545

摘要： A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.

摘要翻译： 多孔抛光工艺包括以下步骤。 提供半成品半导体元件。 半成品半导体部件包括基板，设置在基板上的栅极和设置在基板上并覆盖栅极的电介质层。 将第一抛光工艺施加到电介质层上。 第二次抛光工艺应用于浇口。 第二抛光工艺利用包含水溶性聚合物表面活性剂，碱性化合物和水的润湿溶液。 多孔抛光工艺可有效去除化学机械抛光中形成的氧化物残留物，从而提高集成电路的性能，降低集成电路的生产成本。