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公开(公告)号：US20130200523A1
公开(公告)日：2013-08-08
申请号：US13616549
申请日：2012-09-14
申请人： Shigenori SAWACHI , Osamu Yamagata , Hiroshi Inoue , Satoru Itakura , Tomoshige Chikai , Masahiko Hori , Akio Katsumata
发明人： Shigenori SAWACHI , Osamu Yamagata , Hiroshi Inoue , Satoru Itakura , Tomoshige Chikai , Masahiko Hori , Akio Katsumata
CPC分类号： H01L25/0657 , H01L23/49816 , H01L23/5384 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/06135 , H01L2224/12105 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48145 , H01L2224/73265 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/92244 , H01L2225/06524 , H01L2225/06548 , H01L2225/06562 , H01L2225/06586 , H01L2225/06589 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2924/12042 , H01L2924/12044 , H01L2924/15311 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.
摘要翻译： 一种半导体器件，包括：半导体元件; 支撑基板; 用于密封半导体元件的绝缘材料层及其周边; 设置在所述绝缘材料层中的金属薄膜布线层，其一部分露出在外表面上; 以及设置在绝缘材料层中并电连接到金属薄膜布线层的金属通孔。 半导体元件设置在多个单元中，并且各个半导体元件经由绝缘材料层叠，使得每个半导体元件的电路表面面对金属薄膜布线层，并且每个半导体元件的电极焊盘暴露而不被隐藏 通过堆叠在其上的半导体元件。
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公开(公告)号：US08872350B2
公开(公告)日：2014-10-28
申请号：US13616549
申请日：2012-09-14
申请人： Shigenori Sawachi , Osamu Yamagata , Hiroshi Inoue , Satoru Itakura , Tomoshige Chikai , Masahiko Hori , Akio Katsumata
发明人： Shigenori Sawachi , Osamu Yamagata , Hiroshi Inoue , Satoru Itakura , Tomoshige Chikai , Masahiko Hori , Akio Katsumata
IPC分类号： H01L23/48 , H01L23/495 , H01L23/02 , H01L23/52
CPC分类号： H01L25/0657 , H01L23/49816 , H01L23/5384 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/06135 , H01L2224/12105 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48145 , H01L2224/73265 , H01L2224/73267 , H01L2224/82031 , H01L2224/82039 , H01L2224/92244 , H01L2225/06524 , H01L2225/06548 , H01L2225/06562 , H01L2225/06586 , H01L2225/06589 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2924/12042 , H01L2924/12044 , H01L2924/15311 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.
摘要翻译： 一种半导体器件，包括：半导体元件; 支撑基板; 用于密封半导体元件的绝缘材料层及其周边; 设置在所述绝缘材料层中的金属薄膜布线层，其一部分露出在外表面上; 以及设置在绝缘材料层中并电连接到金属薄膜布线层的金属通孔。 半导体元件设置在多个单元中，并且各个半导体元件经由绝缘材料层叠，使得每个半导体元件的电路表面面对金属薄膜布线层，并且每个半导体元件的电极焊盘暴露而不被隐藏 通过堆叠在其上的半导体元件。
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公开(公告)号：US20120074594A1
公开(公告)日：2012-03-29
申请号：US13075921
申请日：2011-03-30
申请人： Hisakazu MARUTANI , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
发明人： Hisakazu MARUTANI , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
CPC分类号： H01L23/3128 , H01L21/561 , H01L23/16 , H01L23/5389 , H01L23/562 , H01L24/04 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/21 , H01L2224/2101 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/24146 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/76155 , H01L2224/82101 , H01L2224/82102 , H01L2224/92244 , H01L2225/06524 , H01L2225/06548 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.
摘要翻译： 一种半导体器件，包括支撑板，安装在支撑板上并包括具有多个第一电极的电路元件表面的半导体元件，覆盖半导体元件的电路元件表面的第一绝缘层，并且包括多个第一孔 暴露多个第一电极，覆盖支撑板的上部和半导体元件的侧部的第二绝缘层以及形成在第一绝缘层的上部和第二绝缘层的上部上的布线， 并电连接到相应的第一电极。
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公开(公告)号：US08786110B2
公开(公告)日：2014-07-22
申请号：US13075921
申请日：2011-03-30
申请人： Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
发明人： Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
CPC分类号： H01L23/3128 , H01L21/561 , H01L23/16 , H01L23/5389 , H01L23/562 , H01L24/04 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/21 , H01L2224/2101 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/24146 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/76155 , H01L2224/82101 , H01L2224/82102 , H01L2224/92244 , H01L2225/06524 , H01L2225/06548 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.
摘要翻译： 一种半导体器件，包括支撑板，安装在支撑板上并包括具有多个第一电极的电路元件表面的半导体元件，覆盖半导体元件的电路元件表面的第一绝缘层，并且包括多个第一孔 暴露多个第一电极，覆盖支撑板的上部和半导体元件的侧部的第二绝缘层以及形成在第一绝缘层的上部和第二绝缘层的上部上的布线， 并电连接到相应的第一电极。
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