专利检索 cpc:"H01L2224/22" 第 1 页

1.

发明公开
SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE MANUFACTURING METHOD 审中-公开

公开(公告)号：US20240321700A1

公开(公告)日：2024-09-26

申请号：US18612492

申请日：2024-03-21

申请人： Samsung Electronics Co., Ltd.

发明人： Daeyeun Choi , Taeho Ko , Unbyoung Kang , Seokbong Park

IPC分类号： H01L23/498 , H01L21/52 , H01L21/56 , H01L23/00 , H01L23/31 , H01L25/10 , H10B80/00

CPC分类号： H01L23/49811 , H01L21/52 , H01L21/56 , H01L23/3107 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/81 , H01L25/105 , H10B80/00 , H01L2224/16227 , H01L2224/19 , H01L2224/2101 , H01L2224/22 , H01L2224/81

摘要： A semiconductor package includes an upper redistribution structure, a first substrate, a first semiconductor chip, a second semiconductor chip, a bridge chip, and a first insulating layer. The upper redistribution structure includes an upper redistribution insulating layer and upper redistribution patterns. The first substrate includes an upper surface, a lower surface, a first cavity extending in a vertical direction, and a second cavity provided apart from the first cavity in a horizontal direction and extending in the vertical direction. The first substrate is on an upper surface of the upper redistribution structure. The first semiconductor chip is accommodated in the first cavity and electrically connected to a subset of the upper redistribution patterns. The second semiconductor chip is accommodated in the second cavity and electrically connected to a subset of the upper redistribution patterns. The bridge chip is below the upper redistribution structure. The first insulating layer surrounds the bridge chip.

2.

发明授权
Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP 有权

公开(公告)号：US09735113B2

公开(公告)日：2017-08-15

申请号：US12786008

申请日：2010-05-24

申请人： HeeJo Chi , NamJu Cho , JunWoo Myung

发明人： HeeJo Chi , NamJu Cho , JunWoo Myung

IPC分类号： H01L25/065 , H01L21/60 , H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/552 , H05K1/18 , H01L23/31 , H01L23/367 , H01L23/498 , H01L23/00 , H05K3/00 , H05K3/42

CPC分类号： H01L23/5389 , H01L21/4846 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/3128 , H01L23/3672 , H01L23/49816 , H01L23/49827 , H01L23/552 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68359 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1184 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/21 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/245 , H01L2224/25171 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/45099 , H01L2224/4805 , H01L2224/48091 , H01L2224/481 , H01L2224/48105 , H01L2224/48158 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/48245 , H01L2224/48247 , H01L2224/73207 , H01L2224/73209 , H01L2224/73215 , H01L2224/73265 , H01L2224/81005 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81801 , H01L2224/82106 , H01L2224/8385 , H01L2224/95001 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06537 , H01L2225/06568 , H01L2225/06589 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2924/3512 , H05K1/185 , H05K3/0052 , H05K3/007 , H05K3/426 , H01L2924/0665 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

3.

发明授权
Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure 有权

公开(公告)号：US09620455B2

公开(公告)日：2017-04-11

申请号：US12822458

申请日：2010-06-24

申请人： Reza A. Pagaila , Yaojian Lin , Jun Mo Koo

发明人： Reza A. Pagaila , Yaojian Lin , Jun Mo Koo

IPC分类号： H01L21/00 , H01L23/538 , H01L21/56 , H01L21/683 , H01L23/13 , H01L23/498 , H01L25/065 , H01L25/00 , H01L23/31 , H01L23/00

CPC分类号： H01L23/5389 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L23/13 , H01L23/3107 , H01L23/3128 , H01L23/49816 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/68381 , H01L2221/68386 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16265 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73204 , H01L2224/73209 , H01L2224/73259 , H01L2224/73265 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/1203 , H01L2924/12041 , H01L2924/1304 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/14335 , H01L2924/1434 , H01L2924/15172 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/01014 , H01L2924/0665 , H01L2924/0105 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation.

4.

发明授权
Semiconductor device and method of forming thermally conductive layer between semiconductor die and build-up interconnect structure 有权
标题翻译：在半导体管芯和堆积互连结构之间形成导热层的半导体器件和方法

公开(公告)号：US08999760B2

公开(公告)日：2015-04-07

申请号：US13492687

申请日：2012-06-08

申请人： Reza A. Pagaila , Yaojian Lin , Jun Mo Koo

发明人： Reza A. Pagaila , Yaojian Lin , Jun Mo Koo

IPC分类号： H01L21/56 , H01L23/538 , H01L23/31 , H01L23/36 , H01L23/498 , H01L23/552 , H01L23/00 , H05K1/02 , H05K1/18 , H01L23/29 , H01L23/367 , H01L23/544

CPC分类号： H01L23/5389 , H01L21/561 , H01L21/568 , H01L23/295 , H01L23/3107 , H01L23/3128 , H01L23/36 , H01L23/367 , H01L23/3675 , H01L23/49816 , H01L23/49827 , H01L23/544 , H01L23/552 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/48 , H01L24/97 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24195 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29187 , H01L2224/2919 , H01L2224/29298 , H01L2224/32245 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73253 , H01L2224/73265 , H01L2224/73267 , H01L2224/94 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/18162 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H01L2924/3511 , H05K1/0203 , H05K1/186 , H05K2201/09772 , H01L2924/01014 , H01L2924/05432 , H01L2924/0542 , H01L2924/0503 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2924/00012 , H01L2224/03 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

摘要翻译： 半导体器件具有形成在临时载体上的多个开口的导热层。导热层包括非导电材料。半导体管芯具有形成在管芯上的接触焊盘上的多个凸块。半导体管芯安装在导热层上，使得凸块至少部分地设置在导热层的开口内。将密封剂沉积在管芯和导热层上。移除临时载体以暴露凸块。在密封剂，半导体管芯和凸块之上形成第一互连结构。凸块电连接到第一互连结构。可以在半导体管芯上形成散热器或屏蔽层。第二互连结构可以形成在密封剂之上并且通过形成在密封剂中的导电通孔电连接到第一互连结构。

5.

发明授权
Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US08786110B2

公开(公告)日：2014-07-22

申请号：US13075921

申请日：2011-03-30

申请人： Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen

发明人： Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen

IPC分类号： H01L23/48 , H01L23/02

CPC分类号： H01L23/3128 , H01L21/561 , H01L23/16 , H01L23/5389 , H01L23/562 , H01L24/04 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/82 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/21 , H01L2224/2101 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/24146 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/76155 , H01L2224/82101 , H01L2224/82102 , H01L2224/92244 , H01L2225/06524 , H01L2225/06548 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/351 , H01L2924/00

摘要： A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.

摘要翻译： 一种半导体器件，包括支撑板，安装在支撑板上并包括具有多个第一电极的电路元件表面的半导体元件，覆盖半导体元件的电路元件表面的第一绝缘层，并且包括多个第一孔暴露多个第一电极，覆盖支撑板的上部和半导体元件的侧部的第二绝缘层以及形成在第一绝缘层的上部和第二绝缘层的上部上的布线，并电连接到相应的第一电极。

6.

发明申请
Semiconductor Device and Method of Forming Interposer Frame Over Semiconductor Die to Provide Vertical Interconnect 有权
标题翻译：半导体器件和形成内插器框架半导体芯片的方法，以提供垂直互连

公开(公告)号：US20130105989A1

公开(公告)日：2013-05-02

申请号：US13715424

申请日：2012-12-14

申请人： STATS ChipPAC, Ltd.

发明人： Reza A. Pagaila , Seng Guan Chow , Seung Uk Yoon

IPC分类号： H01L23/538

CPC分类号： H01L25/50 , H01L21/486 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/295 , H01L23/3107 , H01L23/3121 , H01L23/3128 , H01L23/3157 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L23/5389 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/83 , H01L24/97 , H01L25/03 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L2221/68345 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/24101 , H01L2224/24226 , H01L2224/24227 , H01L2224/245 , H01L2224/25171 , H01L2224/27002 , H01L2224/29 , H01L2224/2902 , H01L2224/29101 , H01L2224/29144 , H01L2224/2919 , H01L2224/29298 , H01L2224/32155 , H01L2224/32225 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83005 , H01L2224/83191 , H01L2224/8385 , H01L2224/94 , H01L2224/95001 , H01L2224/97 , H01L2225/06548 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/107 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H05K1/186 , H05K3/007 , H05K2201/10674 , H01L2224/81 , H01L2924/01014 , H01L2224/82 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/03 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。插入器框架在插入器框架中具有开口，并且在内插器框架上形成多个导电柱。插入器安装在载体上，并且第一管芯与设置在管芯周围的导电柱相连。可以在插入器框架中形成空腔以容纳第一模具的一部分。密封剂通过载体和第一模具上的插入器框架中的开口沉积。或者，密封剂沉积在载体上并且第一模头和插入器框架被压靠在密封剂上。过多的密封剂通过插入器框架中的开口离开。载体被移除。在密封剂和第一模具上形成互连结构。第二半导体管芯可以安装在第一管芯上方或内插架框架上。

7.

发明授权
Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby 有权
标题翻译：形成完全嵌入的无凸起积聚层包装的方法和由此形成的结构

公开(公告)号：US08304913B2

公开(公告)日：2012-11-06

申请号：US12890045

申请日：2010-09-24

申请人： Ravi K Nalla , Pramod Malatkar , Mathew J Manusharow

发明人： Ravi K Nalla , Pramod Malatkar , Mathew J Manusharow

IPC分类号： H01L23/48

CPC分类号： H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/19 , H01L2224/20 , H01L2224/21 , H01L2224/2101 , H01L2224/211 , H01L2224/22 , H01L2224/2201 , H01L2224/221 , H01L2224/24011 , H01L2224/24146 , H01L2224/251 , H01L2224/25105 , H01L2224/2518 , H01L2224/73267 , H01L2224/82005 , H01L2224/821 , H01L2224/82101 , H01L2224/82106 , H01L2224/93 , H01L2225/06524 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/014 , H01L2924/12042 , H01L2924/181 , H01L2924/18162 , H01L2224/82 , H01L2221/68304 , H01L2924/00

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands.

摘要翻译： 描述了形成微电子封装结构的方法及由此形成的相关结构。这些方法可以包括嵌入在无芯基板中的模具，其中模具化合物围绕模头，并且其中模具包括在第一侧上的TSV连接和在模具的第二侧上的C4焊盘，在第一侧上的电介质材料，在模具化合物的第二面上; 以及耦合到C4焊盘和TSV焊盘的互连结构。实施例还包括形成其中多个管芯完全嵌入在不具有PoP焊盘的BBUL封装内的封装结构。