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公开(公告)号：US5186192A
公开(公告)日：1993-02-16
申请号：US804451
申请日：1991-12-10
IPC分类号： H01L21/00
CPC分类号： H01L21/67023 , Y10S134/902
摘要： Device for cleaning silicon wafers having an upper mist-generating chamber with a high frequency oscillator to generate an aqueous hydrofluoric acid mist and a lower region processing chamber separated by a partitioning wall having a shutter to open and close. Silicon wafers are held in an upright position in a rack. The processing chamber and the shutter have gas jets to eject gas between the silicon wafers and water spray heads in the processing chamber to spray water between the silicon wafers.
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公开(公告)号：US5725753A
公开(公告)日：1998-03-10
申请号：US638233
申请日：1996-04-26
申请人： Yasuyuki Harada , Shigeyoshi Netsu
发明人： Yasuyuki Harada , Shigeyoshi Netsu
IPC分类号： B08B3/10 , C02F1/36 , C02F1/461 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , C02F1/4618 , H01L21/67057 , C02F1/36 , C02F2001/4619 , C02F2201/4611 , C02F2201/46115 , C02F2201/46195
摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.
摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替，所述临时碱性纯水通过在 结合到氢离子交换膜的表面的阴极和阳极，使得碱性清洁处理可以在温和条件下进行，以消除由于形成常规方法中不可避免的COP的麻烦。 此外，在转移到后续的酸性清洁步骤之前，在晶片的碱清洗之后的纯水冲洗可以被省略，以极大地有助于提高生产率。 所使用的装置包括分成中央阴极室的矩形容器，其中晶片在纯水的上升流中保持垂直布置，并且一对阳极室通过用一对氢离子交换 膜，其两侧粘合阴极板和阳极板。
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公开(公告)号：US5733434A
公开(公告)日：1998-03-31
申请号：US648696
申请日：1996-05-16
IPC分类号： B01D61/46 , B01J19/10 , B08B3/10 , B08B3/12 , B08B7/00 , C02F1/36 , C02F1/461 , C30B29/06 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308
CPC分类号： H01L21/02052 , B08B3/12 , B08B7/00 , C02F1/4618 , H01L21/67057 , C02F1/36 , C02F2001/46185 , C02F2201/4611 , C02F2201/46115 , C02F2201/46195
摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an acid is replaced with a cleaning treatment with a temporarily acidic pure water which is produced electrolytically by the application of a DC voltage between an anode and a cathode bonded to the surfaces of a hydrogen-ion exchange membrane so that the acidic cleaning treatment can be performed under mild conditions so as to eliminate the troubles unavoidable in the conventional process. The apparatus used therefor comprises a rectangular vessel partitioned into a central anode compartment, in which the wafers are held in a vertical disposition within an upflow of pure water, and a pair of cathode compartments on both sides of the anode compartment by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which an anode plate and a cathode plate are bonded.
摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用酸性水溶液进行清洁的常规步骤被用临时酸化的纯水进行的清洁处理代替，所述临时酸性纯水通过在 阳极和阴极结合到氢离子交换膜的表面，使得酸性清洁处理可以在温和条件下进行，以消除常规方法中不可避免的麻烦。 使用的装置包括分隔成中央阳极室的矩形容器，其中晶片在纯水的上流中保持垂直布置，并且通过一对分隔在阳极室的两侧上的一对阴极室 的氢离子交换膜，其两侧粘合有阳极板和阴极板。
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公开(公告)号：US6003527A
公开(公告)日：1999-12-21
申请号：US958312
申请日：1997-10-27
CPC分类号： H01L21/02052 , B08B3/02 , B08B3/10 , B08B3/12 , G11B23/505 , H01L21/67051 , B08B2203/0288 , Y10S134/902
摘要： In a cleaning apparatus, a cleaning solution spray means itself is given a function of producing OH.sup.- ionized water and H.sup.+ ionized water and can spray OH.sup.- ionized water and H.sup.+ ionized water, as cleaning solutions immediately after they are produced, upon a substrate to be cleaned, and one of OH.sup.- ionized water and H.sup.+ ionized water can be selectively used as a cleaning solution. This cleaning apparatus includes a substrate holding member for holding a substrate to be cleaned, and a cleaning solution spray member for spraying a cleaning solution upon the substrate. The cleaning solution spray member includes an electrolytic ion generating member for radical-activating or ionizing pure water, and an ultrasonic wave generating member for spraying the radical-activated or ionized pure water, by carrying it on ultrasonic waves, upon the substrate.
摘要翻译： 在清洁装置中，清洁溶液喷雾装置本身具有生产OH-离子化水和H +离子水的功能，并且可以将OH-离子化水和H +离子水作为清洁溶液在其生产之后立即喷涂到基材上 可以选择使用OH-电离水和H +离子水中的一种作为清洗溶液。 该清洁装置包括用于保持要清洁的基板的基板保持部件和用于将清洗液喷射到基板上的清洗液喷射部件。 清洗液喷雾构件包括用于自由基活化或离子化纯水的电解离子产生构件，以及用于通过将超声波载置在基底上而将自由基活化或离子化纯水喷雾的超声波发生构件。
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公开(公告)号：US08328935B2
公开(公告)日：2012-12-11
申请号：US12418165
申请日：2009-04-03
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a silicon member, which is cut out from a single-crystalline silicon ingot at an off-angle range of 5 to 40 degrees relative to a crystal habit line of the ingot, is used as the silicon core wire. The single-crystalline silicon ingot is preferably grown by a Czochralski (CZ) method or floating zone (FZ) method, such that the ingot preferably has an interstitial oxygen concentration of 7 ppma to 20 ppma. Silicon rods produced by this method are less likely to suffer a breakage caused by cleavage during the growth process of polycrystalline silicon during CVD, and exhibit improved FZ method success rates. The polycrystalline silicon rods produced by this method also have low impurity contamination and high single-crystallization efficiency.
摘要翻译： 本发明是一种制造多晶硅棒的方法，其中通过化学气相沉积（CVD）方法将硅沉积到硅芯线上，使得从断开的单晶硅锭切出的硅构件 使用相对于锭的晶体习性线5〜40度的角度范围，作为硅芯线。 单晶硅锭优选通过切克劳斯基（CZ）法或浮动区（FZ）法生长，使得锭优选具有7ppma至20ppma的间隙氧浓度。 通过该方法制造的硅棒在CVD期间不太可能在多晶硅生长过程中由于断裂引起的断裂，并且显示出改进的FZ方法成功率。 通过该方法制造的多晶硅棒也具有低杂质污染和高单结晶效率。
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公开(公告)号：US20090057840A1
公开(公告)日：2009-03-05
申请号：US12263867
申请日：2008-11-03
申请人： Shigeyoshi Netsu , Hisashi Masumura
发明人： Shigeyoshi Netsu , Hisashi Masumura
IPC分类号： H01L23/00
CPC分类号： H01L21/02024 , B24B37/345
摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.
摘要翻译： 本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。 在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。
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7.发明申请Semiconductor wafer manufacturing method, semiconductor wafer mnaufacturing order acceptance method, and semiconductor wafer manufacturing order acceptance system 失效半导体晶圆制造方法，半导体晶圆制造订单验收方法以及半导体晶圆制造订单验收系统公开(公告)号：US20050085017A1
公开(公告)日：2005-04-21
申请号：US10502389
申请日：2003-01-22
申请人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
发明人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
CPC分类号： G06Q10/06 , G05B19/418 , G05B2219/32024 , G06Q10/087 , Y02P90/02 , Y02P90/18
摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.
摘要翻译： 本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。 本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤 选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到 客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。 因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。
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8.发明授权Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon 有权用于生产多晶硅的反应器，用于生产多晶硅的系统以及用于生产多晶硅的工艺公开(公告)号：US09193596B2
公开(公告)日：2015-11-24
申请号：US13496002
申请日：2010-07-09
IPC分类号： C01B33/02 , B01J19/00 , C01B33/035 , C22C1/02
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译： 反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％ （Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。
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9.发明授权公开(公告)号：US09017482B2
公开(公告)日：2015-04-28
申请号：US13496060
申请日：2010-07-20
CPC分类号： H01L21/02595 , B01J19/02 , B01J2219/0236 , C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/463 , C23C16/52 , H01L21/02532 , H01L21/02636 , Y02P20/124 , Y02P20/129
摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要翻译： 本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度 多晶硅。 通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外， 通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。 因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。
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公开(公告)号：US6099748A
公开(公告)日：2000-08-08
申请号：US207194
申请日：1998-12-08
申请人： Shigeyoshi Netsu , Bee Chin Lim , Yee Ping Yap
发明人： Shigeyoshi Netsu , Bee Chin Lim , Yee Ping Yap
CPC分类号： H01L21/02019 , C09K13/02 , H01L21/30604
摘要： There is disclosed a silicon wafer etching method in which etching is performed through use of an etchant. The etchant is an alkali aqueous solution which contains an alkali component in a concentration ranging from 50.6% to 55.0% by weight. The alkali component is preferably sodium hydroxide. The silicon wafer etching method can reduce not only surface roughness but also dispersion thereof.
摘要翻译： 公开了通过使用蚀刻剂进行蚀刻的硅晶片蚀刻方法。 蚀刻剂是含有浓度为50.6重量％〜55.0重量％的碱成分的碱性水溶液。 碱成分优选为氢氧化钠。 硅晶片蚀刻方法不仅可以减少表面粗糙度，而且可以降低其分散性。
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