DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号:US20130146902A1

    公开(公告)日:2013-06-13

    申请号:US13530743

    申请日:2012-06-22

    IPC分类号: H01L33/08

    摘要: A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiNx) and a silicon oxide (SiOx). The second insulation pattern is on the first insulation pattern and includes a remaining one of the silicon nitride (SiNx) and the silicon oxide (SiOx).

    摘要翻译: 显示基板包括金属图案,第一绝缘层图案和第二绝缘层图案。 金属图案在基底上。 第一绝缘图案在金属图案上,并且包括氮化硅(SiNx)和氧化硅(SiO x)之一。 第二绝缘图案在第一绝缘图案上,并且包括氮化硅(SiNx)和氧化硅(SiOx)中的剩余部分。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20100144076A1

    公开(公告)日:2010-06-10

    申请号:US12699764

    申请日:2010-02-03

    申请人: Hong-Sick PARK

    发明人: Hong-Sick PARK

    IPC分类号: H01L21/336

    摘要: The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.

    摘要翻译: 本发明提供一种薄膜晶体管阵列面板,其包括绝缘基板,形成在绝缘基板上的栅极线,形成在栅极线上的栅极绝缘层,漏极电极和数据线,该栅极绝缘层上形成有栅极绝缘 层,其中漏电极面对源电极,其间具有间隙,以及连接到漏电极的像素电极。 栅极线,数据线和漏电极中的至少一个包括由导电氧化物制成的第一导电层和与第一导电层相邻沉积的Ag的第二导电层。

    METHOD OF MANUFACTURING THIN FILM TRANSISTOR PANEL
    10.
    发明申请
    METHOD OF MANUFACTURING THIN FILM TRANSISTOR PANEL 审中-公开
    制造薄膜晶体管面板的方法

    公开(公告)号:US20080188042A1

    公开(公告)日:2008-08-07

    申请号:US11777769

    申请日:2007-07-13

    IPC分类号: H01L21/84

    摘要: Provided is a method of manufacturing a thin film transistor panel that may reduce manufacturing costs. The method includes forming gate wires including a gate line and a gate electrode on an insulating substrate and forming data wires including source and drain electrodes, the data wires being insulated from the gate wires. The method further includes forming a passivation layer covering the gate and data wires, forming contact holes exposing the drain electrodes by etching the passivation layer, and forming a pixel electrode by depositing an indium-free transparent conductive film on the exposed drain electrode and the passivation layer and then dry etching the transparent conductive film.

    摘要翻译: 提供了可以降低制造成本的薄膜晶体管面板的制造方法。 该方法包括在绝缘衬底上形成包括栅极线和栅电极的栅极线,并形成包括源极和漏极的数据线,数据线与栅极线绝缘。 该方法还包括形成覆盖栅极和数据线的钝化层,形成通过蚀刻钝化层而暴露出漏电极的接触孔,以及通过在暴露的漏电极和钝化层上沉积无铟透明导电膜来形成像素电极 然后干燥蚀刻透明导电膜。