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92 条记录 (耗时 0.051 秒)

    Hydraulic stepless transmission
    2.
    发明授权
    Hydraulic stepless transmission 有权
    液压无级变速器

    公开(公告)号：US08302525B2

    公开(公告)日：2012-11-06

    申请号：US12304232

    申请日：2006-11-21

    申请人： Shingo Eguchi ,  Takeshi Ouchida ,  Shuji Shiozaki

    发明人： Shingo Eguchi ,  Takeshi Ouchida ,  Shuji Shiozaki

    IPC分类号： F04B1/20 ,  F15B13/16

    CPC分类号： F16H39/14

    摘要： A hydraulic stepless transmission having increased layout freedom and a compact structure with the functions of conventional hydraulic stepless transmission retained and having increased easiness of production. In the hydraulic stepless transmission, the movable swash plate (input side swash plate) of a variable displacement plunger hydraulic pump or motor is tilted by a hydraulic servo mechanism. The hydraulic servo mechanism has a power piston connected to one end of the input side swash plate for tilting the swash plate, a servo spool (13) placed normal to the direction of sliding of the power piston and substantially parallel to the input side swash plate, and a feedback link for connecting the servo spool and the input side swash plate.

    摘要翻译： 具有增加的布置自由度的液压无级变速器和具有常规液压无级变速器功能的紧凑结构，并且具有增加的生产容易性。 在液压无级变速器中，可变排量柱塞液压泵或电动机的可动斜盘（输入侧斜盘）由液压伺服机构倾斜。 液压伺服机构具有连接到输入侧斜盘的一端的动力活塞，用于使斜盘倾斜;伺服滑阀（13），其垂直于动力活塞的滑动方向放置并基本上平行于输入侧斜盘 以及用于连接伺服卷轴和输入侧旋转斜盘的反馈链路。

    Hydraulic Stepless Transmission
    3.
    发明申请
    Hydraulic Stepless Transmission 有权
    液压无级变速器

    公开(公告)号：US20090199554A1

    公开(公告)日：2009-08-13

    申请号：US12304232

    申请日：2006-11-21

    申请人： Shingo Eguchi ,  Takeshi Ouchida ,  Shuji Shiozaki

    发明人： Shingo Eguchi ,  Takeshi Ouchida ,  Shuji Shiozaki

    IPC分类号： F16H39/10 ,  F04B1/29

    CPC分类号： F16H39/14

    摘要： [Problems] A hydraulic stepless transmission having increased layout freedom and a compact structure with the functions of conventional hydraulic stepless transmission retained and having increased easiness of production.[Means for Solving Problems] In the hydraulic stepless transmission (1), the movable swash plate (input side swash plate (6)) of a variable displacement plunger hydraulic pump or motor is tilted by a hydraulic servo mechanism (3). The hydraulic servo mechanism (3) has a power piston (15) connected to one end of the input side swash plate (6) and tilting it, a servo spool (13) placed normal to the direction of sliding of the power piston (15) and substantially in parallel to the input side swash plate (6), and a feedback link (24) for connecting the servo spool (13) and the input side swash plate (6).

    摘要翻译： [问题]具有增加的布置自由度的液压无级变速器和具有常规液压无级变速器功能的紧凑结构，并且具有增加的生产容易性。 解决问题的手段在液压无级变速器（1）中，可变排量柱塞液压泵或电动机的可动斜盘（输入侧斜盘（6））由液压伺服机构（3）倾斜。 液压伺服机构（3）具有连接到输入侧斜盘（6）的一端并使其倾斜的动力活塞（15），与动力活塞（15）的滑动方向垂直的伺服滑阀（13） ）并且基本上平行于输入侧斜盘（6），以及用于连接伺服阀芯（13）和输入侧斜盘（6）的反馈连杆（24）。

    Semiconductor device and manufacturing method of the same
    6.
    发明授权
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号：US08803298B2

    公开(公告)日：2014-08-12

    申请号：US13354635

    申请日：2012-01-20

    申请人： Yoshiaki Oikawa ,  Shingo Eguchi

    发明人： Yoshiaki Oikawa ,  Shingo Eguchi

    IPC分类号： H01L23/02

    CPC分类号： H01L23/60 ,  H01L23/3107 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00

    摘要： With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

    摘要翻译： 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽，防止由静电放电引起的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏），并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体，可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。

    Semiconductor device and method for manufacturing the same
    8.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08133749B2

    公开(公告)日：2012-03-13

    申请号：US12429201

    申请日：2009-04-24

    申请人： Shingo Eguchi

    发明人： Shingo Eguchi

    IPC分类号： H01L21/84

    CPC分类号： H01L23/562 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00

    摘要： In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

    摘要翻译： 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中，在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过针对外部应力设置抗冲击层和用于扩散冲击的冲击扩散层，减小了施加到每单位面积的半导体集成电路的力，从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。