Thick film capacitor
    4.
    发明授权
    Thick film capacitor 失效
    厚膜电容器

    公开(公告)号:US4772985A

    公开(公告)日:1988-09-20

    申请号:US98240

    申请日:1987-09-18

    摘要: Disclosed is a thick film capacitor comprising (a) a sintered layer of a ferroelectric material mainly consisting of one or more ferroelectric inorganic compounds having a perovskite structure and an inorganic binder having a eutectic composition which experiences a liquid phase at a temperature lower than the sintering temperature of the ferroelectric inorganic compounds, and (b) at least two electrodes formed on both surfaces of the sintered layer of the ferroelectric material. In the thick film capacitor of this invention, the perovskite structure of the ferroelectric inorganic compounds is not destroyed upon sintering. Therefore, a high degree of sintering, a good dielectric characteristic and high moisture and migration resistances can be obtained.

    摘要翻译: 公开了一种厚膜电容器,其包括(a)主要由具有钙钛矿结构的一种或多种铁电无机化合物和具有在低于烧结温度的温度下经历液相的共晶组成的无机粘合剂的铁电体材料的烧结层 铁电体无机化合物的温度,(b)形成在铁电体的烧结层的两面的至少两个电极。 在本发明的厚膜电容器中,铁电体无机化合物的钙钛矿结构在烧结时不破坏。 因此,可以获得高度的烧结,良好的介电特性和高的湿度和迁移电阻。