公开(公告)号：US20090053895A1

公开(公告)日：2009-02-26

申请号：US12171952

申请日：2008-07-11

申请人： Yasuhiro OSHIMA ,  Shinji Ide ,  Yusaku Kashiwagi ,  Kotaro Miyatani

发明人： Yasuhiro OSHIMA ,  Shinji Ide ,  Yusaku Kashiwagi ,  Kotaro Miyatani

IPC分类号： H01L21/311

CPC分类号： H01L21/31695 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633

摘要： There is provided a method for forming a porous dielectric film stably by: forming a surface densification layer by processing a surface of an SiOCH film formed by a plasma CVD process while using an organic silicon compound source; and releasing CHx groups or OH group from the SiOCH film underneath the surface densification layer by hydrogen plasma processing through the surface densification layer with a controlled rate.

摘要翻译： 提供了一种通过以下方法来形成多孔电介质膜的方法：通过在使用有机硅化合物源的同时处理通过等离子体CVD工艺形成的SiOCH膜的表面来形成表面致密化层; 并通过氢等离子体处理，通过表面致密层以受控的速率从表面致密化层下面的SiOCH膜释放CH x基或OH基。

公开(公告)号：US07867922B2

公开(公告)日：2011-01-11

申请号：US12086030

申请日：2006-12-05

申请人： Shinji Ide ,  Yasuhiro Oshima ,  Yusaku Kashiwagi

发明人： Shinji Ide ,  Yasuhiro Oshima ,  Yusaku Kashiwagi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

摘要翻译： 本发明是一种SiOCH膜的成膜方法，包括：单位成膜步骤，包括：通过使用有机硅化合物作为原料沉积SiOCH膜元素并通过使用等离子体CVD法沉积步骤; 以及向沉积的SiOCH膜元件提供氢等离子体处理的氢等离子体处理步骤，其中重复数次单元成膜步骤，以在基板上形成SiOCH膜。

公开(公告)号：US20090152686A1

公开(公告)日：2009-06-18

申请号：US12086030

申请日：2006-12-05

申请人： Shinji Ide ,  Yasuhiro Oshima ,  Yusaku Kashiwagi

发明人： Shinji Ide ,  Yasuhiro Oshima ,  Yusaku Kashiwagi

IPC分类号： H01L23/58 ,  H01L21/47 ,  C23C16/52

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

摘要翻译： 本发明是一种SiOCH膜的成膜方法，包括：单位成膜步骤，包括：通过使用有机硅化合物作为原料沉积SiOCH膜元素并通过使用等离子体CVD法沉积步骤; 以及向沉积的SiOCH膜元件提供氢等离子体处理的氢等离子体处理步骤，其中重复数次单元成膜步骤，以在基板上形成SiOCH膜。

公开(公告)号：US07662728B2

公开(公告)日：2010-02-16

申请号：US11431720

申请日：2006-05-11

申请人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

发明人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

IPC分类号： H01L21/31

CPC分类号： H01L21/0234 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/3121

摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

摘要翻译： 形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜 的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

公开(公告)号：US20060205191A1

公开(公告)日：2006-09-14

申请号：US11431720

申请日：2006-05-11

申请人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

发明人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

IPC分类号： B08B6/00 ,  H01L21/20

CPC分类号： H01L21/0234 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/3121

摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

摘要翻译： 形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜 的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

公开(公告)号：US20070098890A1

公开(公告)日：2007-05-03

申请号：US10572477

申请日：2004-09-17

申请人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

发明人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

IPC分类号： C23C16/00 ,  H05H1/24 ,  B05D3/00 ,  G06F19/00 ,  H01L21/306 ,  C23F1/00 ,  B29C71/04

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3003 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/31633

摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

摘要翻译： 本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。 将含有氢原子的工艺气体供给到反应容器中。 将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。 绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。 通过径向天线将微波提供给反应容器。

公开(公告)号：US07645481B2

公开(公告)日：2010-01-12

申请号：US10572477

申请日：2004-09-17

申请人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

发明人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

IPC分类号： C23C16/00 ,  C04B41/00 ,  C30B28/12 ,  C30B17/00

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3003 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/31633

摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

摘要翻译： 本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。 将含有氢原子的工艺气体供给到反应容器中。 将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。 绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。 通过径向天线将微波提供给反应容器。

公开(公告)号：US20110023784A1

公开(公告)日：2011-02-03

申请号：US12933878

申请日：2010-03-11

申请人： Yusaku Kashiwagi ,  Kippei Sugita

发明人： Yusaku Kashiwagi ,  Kippei Sugita

IPC分类号： H01L21/469

CPC分类号： B05D1/60

摘要： An evaporator includes a heating part that heats and sublimates a solid source material to generate a source gas; a supplying part that is provided above the heating part and supplies the solid source material to the heating part; a gas introduction part to which a carrier gas that transports the source gas generated in the heating part is introduced; and a gas discharging part that discharges the generated source gas along with the carrier gas. The carrier gas introduced from the gas introduction part flows through the heating part.

摘要翻译： 蒸发器包括加热部分，其加热和升华固体源材料以产生源气体; 供给部，其设置在所述加热部的上方，并将所述固体源材料供给到所述加热部; 导入在加热部中产生的源气体的载气的导入部， 以及与载气一起排出所产生的源气体的气体排出部。 从气体导入部导入的载气流过加热部。

公开(公告)号：US08378464B2

公开(公告)日：2013-02-19

申请号：US12683073

申请日：2010-01-06

申请人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

发明人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

IPC分类号： H01L21/312 ,  H01L29/06

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76822 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在基板上形成含有苯基和硅的薄膜，同时通过活化含有苯基的有机硅烷气体和硅和氮作为原始成分而获得等离子体，但是 不可避免的杂质，将基板暴露于等离子体，将基板的温度设定在200℃以下; 和（b）通过向衬底提供能量以便从薄膜中释放水分来获得低介电常数膜。 利用这种制造半导体器件的方法，可以获得含有有机物质的氧化硅类低介电常数膜，当通过蚀刻处理进行等离子体处理时，有机物质不被有机物释放而显着损坏 ，灰化处理和/或类似物。

公开(公告)号：US07601402B2

公开(公告)日：2009-10-13

申请号：US10703092

申请日：2003-11-07

申请人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

发明人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

IPC分类号： H05H1/24

CPC分类号： C23C16/45523 ,  C23C16/401 ,  C23C16/56 ,  F27B17/0025 ,  H01J37/32082 ,  H01L21/67161 ,  H01L21/67207

摘要： A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

摘要翻译： 形成多孔绝缘膜的方法包括绝缘膜形成步骤和孔形成步骤。 在绝缘膜形成步骤中，有机硅氧烷基化合物和具有极性基团的有机化合物的等离子体处理形成具有硅氧烷结构的绝缘膜。 具有极性基团的有机化合物的分子包含在该硅氧烷结构内。 在孔形成步骤期间，激发气体除去具有极性基团的有机化合物的分子，以在绝缘膜中提供孔。 根据该方法，可以得到厚度方向均一地形成有规定厚度的绝缘膜和孔。