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    Semiconductor device, and manufacturing method and manufacturing apparatus of the same
    1.
    发明授权
    Semiconductor device, and manufacturing method and manufacturing apparatus of the same 有权
    半导体装置及其制造方法及制造装置

    公开(公告)号：US08956917B2

    公开(公告)日：2015-02-17

    申请号：US13353826

    申请日：2012-01-19

    申请人： Tetsuya Kurosawa ,  Shinya Takyu ,  Akira Tomono

    发明人： Tetsuya Kurosawa ,  Shinya Takyu ,  Akira Tomono

    IPC分类号： H01L21/78 ,  H01L29/30 ,  H01L21/683

    CPC分类号： H01L21/78 ,  H01L21/6836

    摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

    摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。 （e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
    半导体器件制造方法和半导体器件

    公开(公告)号：US20120235282A1

    公开(公告)日：2012-09-20

    申请号：US13372962

    申请日：2012-02-14

    申请人： Akira TOMONO ,  Tetsuya KUROSAWA ,  Tsutomu FUJITA ,  Mika KIRITANI ,  Shinya TAKYU

    发明人： Akira TOMONO ,  Tetsuya KUROSAWA ,  Tsutomu FUJITA ,  Mika KIRITANI ,  Shinya TAKYU

    IPC分类号： H01L21/78 ,  H01L23/00

    CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method comprises (a) forming cut grooves in a front surface of a semiconductor wafer on which semiconductor elements are formed to partition the front surface into a plurality of regions, (b) disposing partly a resin in the cut grooves, (c) adhering a protection tape on the front surface of the semiconductor wafer, (d) thinning the semiconductor wafer by grinding a rear surface of the semiconductor wafer to reach the cut grooves, (e) forming an adhesive agent layer on the rear surface of the semiconductor wafer, and (f) dividing the semiconductor wafer into a plurality of semiconductor chips by cutting the adhesive agent layer together with the disposed resin along the cut grooves.

    摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法包括：（a）在形成有半导体元件的半导体晶片的前表面上形成切割槽，以将前表面分隔成多个区域，（b）部分地将树脂放置在切割槽中，（c）粘附 在半导体晶片的前表面上的保护带，（d）通过研磨半导体晶片的后表面到达切割槽来使半导体晶片变薄，（e）在半导体晶片的后表面上形成粘合剂层 ，和（f）通过沿着切割槽与所设置的树脂一起切割粘合剂层，将半导体晶片分成多个半导体芯片。

    Method and apparatus for directional counting of moving objects
    5.
    发明授权
    Method and apparatus for directional counting of moving objects 失效
    移动物体定向计数的方法和装置

    公开(公告)号：US5574762A

    公开(公告)日：1996-11-12

    申请号：US522196

    申请日：1995-08-31

    申请人： Atsushi Sato ,  Megumu Tsuchikawa ,  Akira Tomono ,  Kenichiro Ishii

    发明人： Atsushi Sato ,  Megumu Tsuchikawa ,  Akira Tomono ,  Kenichiro Ishii

    IPC分类号： G06K9/00 ,  G06T7/20 ,  G07C9/00 ,  G06M11/02

    CPC分类号： G06K9/00778 ,  G06T7/2053 ,  G07C9/00

    摘要： A scheme for directional counting of moving objects capable of counting moving objects stably while determining passing directions of the moving objects accurately. In this scheme, a counting line is set in an image field of the sequential images, and a dynamic image formed by pixels forming the counting line is obtained for each frame and while a succesively updated background image is obtained. Then, a subtraction and binarization processing are applied to the dynamic image and the background image to extract a moving object region, and a moving object image is formed by sequentially labeling the moving object region in time order. Then, a number of moving objects passing through a monitoring target location is counted according to the moving object image, while upper and lower direction judgement regions are set above and below the counting line and a passing direction of each moving object is determined by judging one of the upper and lower direction judgement regions in which the moving object is present at a time of a formation start/end time of the moving object image.

    摘要翻译： 一种能够精确地确定运动物体的通过方向的运动物体稳定计数的运动物体的方向计数方案。 在该方案中，在顺序图像的图像场中设置计数线，并且对于每个帧获得由形成计数线的像素形成的动态图像，并且获得连续更新的背景图像。 然后，将减法和二值化处理应用于动态图像和背景图像以提取移动对象区域，并且通过以时间顺序顺序地标记移动对象区域来形成移动对象图像。 然后，根据移动物体图像计数穿过监视目标位置的多个移动物体，同时将上下方向判断区域设置在计数线的上方和下方，并且通过判断每个移动物体的通过方向来确定 在移动物体图像的形成开始/结束时刻的时刻存在移动物体的上下方向判断区域。

    Walking pattern processing method and system for embodying the same
    7.
    发明授权
    Walking pattern processing method and system for embodying the same 失效
    步行图案处理方法和体现体现

    公开(公告)号：US5885229A

    公开(公告)日：1999-03-23

    申请号：US684676

    申请日：1996-07-19

    申请人： Junji Yamato ,  Kyoko Sudo ,  Akira Tomono ,  Masanobu Arai

    发明人： Junji Yamato ,  Kyoko Sudo ,  Akira Tomono ,  Masanobu Arai

    IPC分类号： A61B5/103

    CPC分类号： A61B5/1038 ,  A61B5/742

    摘要： According to the present invention, two-dimensional pressure distribution associated with walking are collected at a preselected time interval as time series pressure distribution images, superposed images are formed by superposing the time series pressure distribution images in a time direction, a plurality of foot pressure mass regions are extracted from the superposed images, correspondence of each foot pressure mass region to the time series pressure distribution images are detected, feature parameters associated with the walking are detected based on the correspondence, and the feature parameters are displayed or printed.

    摘要翻译： 根据本发明，与步行相关联的二维压力分布以预选的时间间隔收集为时间序列压力分布图像，叠加图像通过在时间方向上叠加时间序列压力分布图像，多个脚压 从叠加图像中提取质量区域，检测每个脚压力质量区域与时间序列压力分布图像的对应关系，基于对应性检测与行走相关联的特征参数，并且显示或打印特征参数。

    SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF THE SAME 有权
    半导体器件及其制造方法及其制造方法

    公开(公告)号：US20120187542A1

    公开(公告)日：2012-07-26

    申请号：US13353826

    申请日：2012-01-19

    申请人： Tetsuya KUROSAWA ,  Shinya Takyu ,  Akira Tomono

    发明人： Tetsuya KUROSAWA ,  Shinya Takyu ,  Akira Tomono

    IPC分类号： H01L29/30 ,  H01L21/78 ,  B32B37/06

    CPC分类号： H01L21/78 ,  H01L21/6836

    摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

    摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。 （e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。