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39 条记录 (耗时 0.023 秒)

    Seat belt warning device
    1.
    发明授权
    Seat belt warning device 有权
    安全带警示装置

    公开(公告)号：US06239695B1

    公开(公告)日：2001-05-29

    申请号：US09519329

    申请日：2000-03-06

    申请人： Shoji Okada ,  Yasuaki Suzuki ,  Hitoshi Takayanagi

    发明人： Shoji Okada ,  Yasuaki Suzuki ,  Hitoshi Takayanagi

    IPC分类号： G08B2100

    CPC分类号： B60R22/48 ,  B60R2022/4816 ,  B60R2022/4858 ,  B60R2022/4866

    摘要： A seat belt warning device includes a sitting detection switch which is adapted to be in an on-state when a person sits on a vehicle seat and in an off-state when a person is not sitting on the vehicle seat, and a fastening detection switch which is connected to the sitting detection switch in series and adapted to be in an on-state when a seat belt is not fastened and in an off-state when the seat belt is fastened. A warning member is connected to the sitting detection switch and the fastening detection switch in series and is supplied with electric current in the on-state of the sitting detection switch and the on-state of the fastening detection switch to issue a warning.

    摘要翻译： 一种座椅安全带警示装置，包括：座位检测开关，当人坐在车辆座椅上时处于开状态，并且当人不在座位时处于关闭状态，紧固检测开关 其连接到座椅检测开关并且当座椅安全带未被紧固时适于处于开启状态，并且当安全带被紧固时处于断开状态。 警报部件与座位检测开关和紧固检测开关串联连接，并且在座位检测开关的接通状态和紧固检测开关的接通状态下被提供电流以发出警告。

    Power window regulator apparatus
    3.
    发明授权
    Power window regulator apparatus 失效
    电动窗调节装置

    公开(公告)号：US5749173A

    公开(公告)日：1998-05-12

    申请号：US803244

    申请日：1997-02-20

    申请人： Toshihiko Ishida ,  Toshimitsu Oka ,  Naofumi Fujie ,  Hitoshi Ishikawa ,  Yasuaki Suzuki

    发明人： Toshihiko Ishida ,  Toshimitsu Oka ,  Naofumi Fujie ,  Hitoshi Ishikawa ,  Yasuaki Suzuki

    IPC分类号： E05F15/16 ,  B60J1/00 ,  B60J1/17 ,  E05F15/00 ,  H01H35/00 ,  H02K7/116 ,  H02K11/00 ,  E05F15/08

    CPC分类号： H02K7/1166 ,  E05F15/41 ,  H01H35/006 ,  E05F15/697 ,  E05Y2201/49 ,  E05Y2400/552 ,  E05Y2900/55 ,  H02K11/00

    摘要： A regulator for a power window having a safety function for preventing an object from being caught in a closing power window includes a driving unit for raising and lowering the window glass of a vehicle and a driven unit which receives power from the driving unit. When frictional resistance corresponding to relative displacement between the driving and driven units is less than a fixed value during descent of the window glass and exceeds this fixed during ascent of the window glass, the ascending window glass is reversed and made to descend. When the amount of an increase in current to the driving unit during ascent of the window glass increases in a case where the sliding resistance has exceeded a fixed value even once during descent of the window glass, the ascending window glass is reversed and made to descend.

    摘要翻译： 具有用于防止物体被卡在关闭动力窗中的安全功能的动力窗的调节器包括用于升高和降低车辆的窗玻璃的驱动单元和从驱动单元接收动力的从动单元。 当对应于驱动单元和从动单元之间的相对位移的摩擦阻力小于窗玻璃下降期间的固定值并且在窗玻璃上升期间超过该固定值时，上升的窗玻璃被倒转并下降。 当在窗玻璃下降期间滑动阻力一旦超过固定值的情况下，当窗玻璃上升期间向驱动单元的电流增加量增加时，上升的窗玻璃被反转并使其下降 。

    Sense amplifier
    5.
    发明授权
    Sense amplifier 失效
    感应放大器

    公开(公告)号：US4558241A

    公开(公告)日：1985-12-10

    申请号：US626795

    申请日：1984-07-02

    申请人： Yasuo Suzuki ,  Hiroshi Hirao ,  Yasuaki Suzuki

    发明人： Yasuo Suzuki ,  Hiroshi Hirao ,  Yasuaki Suzuki

    IPC分类号： G11C7/06 ,  G11C11/409 ,  G11C11/419 ,  G11C11/56 ,  H03K5/24 ,  G01R19/165 ,  G11C11/06 ,  H03K3/356

    CPC分类号： G11C11/56 ,  G11C11/5692 ,  G11C7/065 ,  G11C7/06

    摘要： A flip-flop type sense amplifier for a semiconductor memory device is disclosed, the sense amplifier comprising a pair of CMOS inverters cross-coupled with each other to form a CMOS flip-flop circuit having a pair of buffer circuits, for receiving the read-out voltage signals from multi-level memory cells and a predetermined reference voltage, respectively, and a pair of switching circuits for inverting a power source voltage across the flip-flop circuit through common sources of the flip-flop circuit, in response to the transition between a stand-by sequence and a latching operating. The common source of the p-channel transistors of the CMOS flip-flop circuit is connected to a negative potential source, and the common source of the n-channel transistors is connected to a positive potential source during a stand-by sequence, and vice versa, during a latching operation. This unique potential supply method enhances operational speed of the sense amplifier. In a multi-level memory device, a plurality of the sense amplifiers are connected in parallel for the discrimination of the read-out signals changing in a range of a few volts.

    摘要翻译： 公开了一种用于半导体存储器件的触发器型读出放大器，该读出放大器包括一对互相交叉耦合的CMOS反相器，以形成具有一对缓冲电路的CMOS触发器电路， 分别来自多电平存储单元的输出电压信号和预定的参考电压;以及一对开关电路，用于响应于转换，通过触发器电路的公共源来反转触发器电路两端的电源电压 在待机序列和锁定操作之间。 CMOS触发器电路的p沟道晶体管的共同源极连接到负电位源，并且n沟道晶体管的公共源在待机序列期间连接到正电位源， 反之亦然，在锁定操作期间。 这种独特的电位供应方法提高了读出放大器的运行速度。 在多电平存储器件中，多个读出放大器并联连接，用于区分在几伏范围内变化的读出信号。

    Worm wheel and worm gear
    6.
    发明授权
    Worm wheel and worm gear 有权
    蜗轮和蜗轮

    公开(公告)号：US07640822B2

    公开(公告)日：2010-01-05

    申请号：US11762417

    申请日：2007-06-13

    申请人： Yasuaki Suzuki ,  Nobuhiko Takeda ,  Kouji Hirao

    发明人： Yasuaki Suzuki ,  Nobuhiko Takeda ,  Kouji Hirao

    IPC分类号： F16H55/22

    CPC分类号： F16H55/22 ,  F16H55/06 ,  F16H2055/065 ,  Y10T74/19633 ,  Y10T74/19828 ,  Y10T74/19949 ,  Y10T74/19953

    摘要： A resin worm wheel is formed by injection molding and includes a first end and a second end. The worm wheel is adapted to be driven by a worm. The worm wheel further includes: an engaging portion including a plurality of teeth engageable with the worm and a tooth space formed between the neighboring teeth; a first non-engaging portion adjacent to the engaging portion at the first end of the worm wheel and not engaging with the worm; and a first cutout portion formed at the first non-engaging portion continuously from the tooth space, the first cutout portion extending axially.

    摘要翻译： 树脂蜗轮通过注射成型形成，并且包括第一端和第二端。 蜗轮适合由蜗杆驱动。 蜗轮还包括：接合部分，其包括可与蜗杆啮合的多个齿和形成在相邻齿之间的齿形空间; 在蜗轮的第一端处与接合部相邻并且不与蜗杆接合的第一非接合部; 以及第一切口部，其从所述齿部空间连续地形成在所述第一非接合部，所述第一切口部沿轴向延伸。

    METHOD OF PLASMA TREATMENT USING AMPLITUDE-MODULATED RF POWER
    7.
    发明申请
    METHOD OF PLASMA TREATMENT USING AMPLITUDE-MODULATED RF POWER 有权
    使用振幅调制RF功率的等离子体处理方法

    公开(公告)号：US20090136683A1

    公开(公告)日：2009-05-28

    申请号：US11946022

    申请日：2007-11-27

    申请人： Yasushi Fukasawa ,  Mitsutoshi Shuto ,  Yasuaki Suzuki

    发明人： Yasushi Fukasawa ,  Mitsutoshi Shuto ,  Yasuaki Suzuki

    IPC分类号： H05H1/24

    CPC分类号： H01J37/32146 ,  C23C16/505 ,  H01J37/32091

    摘要： A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

    摘要翻译： 通过等离子体CVD处理衬底的方法包括：（i）在反应器中的成膜​​气体存在下，通过在基座和喷淋板之间施加RF功率，在放置在基座上的衬底上形成膜; 和（ii）在步骤（i）完成后，在不卸载基板的情况下，在不存在成膜气体的情况下，在基膜和喷淋板之间施加幅度调制的RF功率，但是在非成膜 气体以降低衬底的浮动电位。

    DC bias voltage measurement circuit and plasma CVD apparatus comprising the same
    8.
    发明授权
    DC bias voltage measurement circuit and plasma CVD apparatus comprising the same 失效
    直流偏置电压测量电路和等离子体CVD装置

    公开(公告)号：US07514934B2

    公开(公告)日：2009-04-07

    申请号：US11232532

    申请日：2005-09-22

    申请人： Mitsutoshi Shuto ,  Yasuaki Suzuki

    发明人： Mitsutoshi Shuto ,  Yasuaki Suzuki

    IPC分类号： G01R31/12 ,  H01H9/50

    CPC分类号： G01R19/0061 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32706

    摘要： A circuit for measuring DC bias voltage occurring in an ungrounded electrode of a plasma processing apparatus, includes: a first terminal connected between the ungrounded electrode and the RF power source; a second terminal for determining a value of the DC bias voltage; a first resistance connected between the first terminal and the second terminal; a second resistance connected between the second terminal and a ground; and a condenser disposed in parallel to the second resistance between the second terminal and the ground. The sum of the first resistance value and the second resistance value is about 50 MΩ or greater.

    摘要翻译： 一种用于测量等离子体处理装置的未接地电极中产生的直流偏置电压的电路，包括：连接在未接地电极和RF电源之间的第一端子; 用于确定所述DC偏置电压的值的第二端子; 连接在第一端子和第二端子之间的第一电阻器; 连接在第二端子和地之间的第二电阻; 以及与第二端子和地之间的第二电阻平行设置的电容器。 第一电阻值和第二电阻值之和约为50MΩ以上。

    Semiconductor substrate supporting apparatus
    10.
    发明申请
    Semiconductor substrate supporting apparatus 审中-公开
    半导体衬底支撑装置

    公开(公告)号：US20050037626A1

    公开(公告)日：2005-02-17

    申请号：US10911813

    申请日：2004-08-05

    申请人： Mitsutoshi Shuto ,  Yasuaki Suzuki

    发明人： Mitsutoshi Shuto ,  Yasuaki Suzuki

    IPC分类号： H01L21/683 ,  C23C16/458 ,  C23C16/509 ,  H01L21/205 ,  H01L21/469 ,  H01L21/68

    CPC分类号： C23C16/4581 ,  C23C16/5096

    摘要： A semiconductor substrate supporting apparatus for supporting a single semiconductor substrate in a plasma CVD apparatus comprises a placing block having a substrate placing area on which the substrate is placed. The substrate placing area is anodized and has as an outermost film an anodic oxide film having a thickness of about 30 μm to about 60 μm and/or a dielectric breakdown voltage of about 300 V or higher.

    摘要翻译： 用于在等离子体CVD装置中支撑单个半导体衬底的半导体衬底支撑装置包括具有其上放置衬底的衬底放置区域的放置块。 基板放置区域被阳极氧化，并且具有厚度为约30μm至约60μm和/或约300V或更高的介电击穿电压的阳极氧化膜作为最外膜。