公开(公告)号：US5194421A

公开(公告)日：1993-03-16

申请号：US794694

申请日：1991-11-20

申请人： Shuichiro Shimoda ,  Toranosuke Ashizawa ,  Keiji Sumiya ,  Hideji Kuwajima ,  Minoru Ishihara ,  Shozo Yamana

发明人： Shuichiro Shimoda ,  Toranosuke Ashizawa ,  Keiji Sumiya ,  Hideji Kuwajima ,  Minoru Ishihara ,  Shozo Yamana

IPC分类号： C01G29/00 ,  H01L39/12

CPC分类号： H01L39/126 ,  C01G29/006 ,  C01P2006/32 ,  C01P2006/40 ,  Y10S505/776 ,  Y10S505/782

摘要： The present invention provides an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-B Mg.sub.B Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35 and B=0.05-0.3 in which numerals represent atomic ratio and an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, barium and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-(B+C) (Mg.sub.B Ba.sub.C)Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35, B=0.05-0.3 and C=0.02-0.2 in which numerals represent atomic ratio. Methods for producing these superconductors are also provided.

摘要翻译： 本发明提供主要由铋，铅，锶，钙，镁和铜组成的氧化物超导体，其组成由下式表示：Bi1-APbASr1-BMgBCa1Cu1.7 +/- 0.3Ox其中A = 0.15〜 0.35和B = 0.05-0.3，其中数字表示原子比，主要由铋，铅，锶，钙，镁，钡和铜组成的氧化物超导体，其组成由下式表示：Bi1-APbASr1-（B + C）（MgBBaC）Ca1Cu1.7 +/- 0.3Ox其中A = 0.15-0.35，B = 0.05-0.3和C = 0.02-0.2，其中数字表示原子比。 还提供了制造这些超导体的方法。

公开(公告)号：US5147851A

公开(公告)日：1992-09-15

申请号：US428946

申请日：1989-10-30

申请人： Shozo Yamana ,  Hideji Kuwajima ,  Minoru Ishihara ,  Keiji Sumiya ,  Toranosuke Ashizawa ,  Shuichiro Shimoda

发明人： Shozo Yamana ,  Hideji Kuwajima ,  Minoru Ishihara ,  Keiji Sumiya ,  Toranosuke Ashizawa ,  Shuichiro Shimoda

IPC分类号： H01L23/48 ,  H01L39/12 ,  H01L39/24

CPC分类号： H01L39/2461 ,  H01L39/2429 ,  Y10S428/901 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704 ,  Y10T428/31678

摘要： A superconducting thick film circuit board or thick film superconductor obtained by forming a rod-like crystal superconducting composite layer comprising a superconductor made of a compound of M-Ba-Cu-O, M being Y and/or a lanthanide element, and a composite of Ag and Pt on a stabilized zirconia substrate has a high Jc value and good superconducting properties.

公开(公告)号：US5238911A

公开(公告)日：1993-08-24

申请号：US679318

申请日：1991-04-02

申请人： Hidegi Kuwajima ,  Keiji Sumiya ,  Shuichiro Shimoda ,  Toranosuke Ashizawa ,  Minoru Ishihara ,  Shozo Yamana

发明人： Hidegi Kuwajima ,  Keiji Sumiya ,  Shuichiro Shimoda ,  Toranosuke Ashizawa ,  Minoru Ishihara ,  Shozo Yamana

IPC分类号： C04B35/45 ,  H01L39/12

CPC分类号： H01L39/126 ,  C04B35/4521 ,  Y10S505/782

摘要： An oxide superconductor of the formula: Bi.sub.1.0 Sr.sub.A Ca.sub.B Mg.sub.C Ba.sub.D Cu.sub.1.0.+-.0.15 O.sub.X wherein A=0.6-1.3, B=0.3-0.9, C=0.01-0.3 and D=0.01-0.3 in atomic ratio, having a 2212 phase with a critical temperature of making electrical resistance zero at about 80K or more, can be produced by firing preferably at 820.degree.-870.degree. C. in a lower oxygen content atmosphere.

公开(公告)号：US08137159B2

公开(公告)日：2012-03-20

申请号：US13217447

申请日：2011-08-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

公开(公告)号：US07871308B2

公开(公告)日：2011-01-18

申请号：US11484611

申请日：2006-07-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00 ,  C09C1/68

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20100001229A1

公开(公告)日：2010-01-07

申请号：US12547802

申请日：2009-08-26

申请人： Hiroshi Nakagawa ,  Toranosuke Ashizawa ,  Takenori Narita ,  Masaya Nishiyama

发明人： Hiroshi Nakagawa ,  Toranosuke Ashizawa ,  Takenori Narita ,  Masaya Nishiyama

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The present invention provides a CMP slurry for silicon film, and by using such the slurry, polishing rates and polishing rate ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, a single slurry is used for forming a contact plug in self-alignment manner to decrease costs for producing semiconductor elements and improve yield. The slurry comprises abrasive grains, a cationic surfactant and water and has a pH value of 6.0 to 8.0.

摘要翻译： 本发明提供了一种用于硅膜的CMP浆料，并且通过使用这样的浆料，获得了执行CMP所需的硅膜，氮化硅膜和氧化硅膜的抛光速率和抛光速率比。 在CMP中，使用单个浆料以自对准方式形成接触塞，以降低制造半导体元件的成本并提高产量。 浆料包含磨粒，阳离子表面活性剂和水，pH值为6.0〜8.0。

公开(公告)号：US20090253355A1

公开(公告)日：2009-10-08

申请号：US12484973

申请日：2009-06-15

申请人： Naoyuki Koyama ,  Kouji Haga ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Youiti Machii

发明人： Naoyuki Koyama ,  Kouji Haga ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Youiti Machii

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24B57/02

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625

摘要： The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

摘要翻译： 本发明公开了一种CMP研磨剂，其包含氧化铈颗粒，分散剂，具有能够与待抛光的膜表面上存在的羟基形成氢键的原子或结构的有机聚合物和水， 抛光衬底，其包括通过移动其上形成有待抛光的膜的衬底抛光待抛光的膜和抛光台板，同时将衬底压靠在抛光台板和抛光布上并将CMP磨料供应在待抛光的膜之间 抛光布，半导体器件的制造方法，包括上述抛光方法的步骤和用于CMP研磨剂的添加剂，其包含具有能够与羟基形成氢键的原子或结构的有机聚合物 存在于要抛光的膜的表面上，以及水。

公开(公告)号：US06863700B2

公开(公告)日：2005-03-08

申请号：US09782241

申请日：2001-02-13

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietvelt方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietvelt法（用RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US06615499B1

公开(公告)日：2003-09-09

申请号：US09979733

申请日：2001-11-28

申请人： Jun Matsuzawa ,  Atsushi Sugimoto ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Yuuto Ootsuki

发明人： Jun Matsuzawa ,  Atsushi Sugimoto ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Yuuto Ootsuki

IPC分类号： C09K314

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/14 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention provides a method for producing cerium oxide comprising rapid heating of cerium salts to a calcining temperature to calcine them, a cerium oxide abrasive containing the cerium oxide produced by the method and pure water, an abrasive containing a slurry in which cerium oxide particles having an intensity ratio of an area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) in a powder X-ray diffraction chart of 3.20 or more are dispersed in a medium, an abrasive containing a slurry in which cerium oxide particles whose bulk density is 6.5 g/cm3 or less are dispersed into a medium, an abrasive containing a slurry in which abrasive grains having pores are dispersed into a medium, a method for polishing a substrate comprising polishing a predetermined substrate using the abrasive; and a method for manufacturing a semiconductor comprising the step of polishing by the abrasive.

摘要翻译： 本发明提供了一种生产氧化铈的方法，包括将铈盐快速加热至煅烧温度以煅烧它们，含有通过该方法生产的氧化铈的氧化铈磨料和纯水，含有其中氧化铈颗粒 在粉末X射线衍射图中，出现在32〜35°（一次峰/次峰）的二峰出现在27-30度的一次峰的面积的强度比分散在3.20以上分散 在介质中，含有其中堆积密度为6.5g / cm 3以下的氧化铈颗粒分散在介质中的浆料的研磨剂，含有其中具有孔的磨粒的浆料分散在介质中的研磨剂， 抛光衬底，包括使用研磨剂抛光预定衬底; 以及一种用于制造半导体的方法，包括通过研磨剂抛光的步骤。

公开(公告)号：US07410409B1

公开(公告)日：2008-08-12

申请号：US10018188

申请日：2000-06-15

申请人： Naoyuki Koyama ,  Kouji Haga ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Youiti Machii

发明人： Naoyuki Koyama ,  Kouji Haga ,  Masato Yoshida ,  Keizou Hirai ,  Toranosuke Ashizawa ,  Youiti Machii

IPC分类号： B24B1/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625

摘要： The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

摘要翻译： 本发明公开了一种CMP研磨剂，其包含氧化铈颗粒，分散剂，具有能够与待抛光的膜表面上存在的羟基形成氢键的原子或结构的有机聚合物和水， 抛光衬底，其包括通过移动其上形成有待抛光的膜的衬底抛光待抛光的膜和抛光台板，同时将衬底压靠在抛光台板和抛光布上并将CMP磨料供应在待抛光的膜之间 抛光布，半导体器件的制造方法，包括上述抛光方法的步骤和用于CMP研磨剂的添加剂，其包含具有能够与羟基形成氢键的原子或结构的有机聚合物 存在于要抛光的膜的表面上，以及水。