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14 条记录 (耗时 0.031 秒)

    Lift-off process for patterning fine metal lines
    4.
    发明授权
    Lift-off process for patterning fine metal lines 有权
    图案精细金属线的剥离工艺

    公开(公告)号：US06372414B1

    公开(公告)日：2002-04-16

    申请号：US09268438

    申请日：1999-03-12

    申请人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

    发明人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

    IPC分类号： G03F726

    CPC分类号： G03F7/322 ,  G03F7/168 ,  G03F7/38

    摘要： The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

    摘要翻译： 本发明涉及在用于金属剥离工艺的基板上提供图案的方法，该方法包括：1）用液体正性光致抗蚀剂涂覆基材; 2）软化涂层基材; 3）使底物与含有约0.005体积％至约0.05体积％的亚烷基二醇烷基醚的含水碱性显影剂接触; 4）将图案化掩模放置在衬底上; 5）使基板通过掩模曝光; 6）曝光后烘烤基材; 7）任选地，泛化暴露基板; 和8）用含水碱性显影剂显影底物。 本发明还涉及含有约0.005体积％至约0.5体积％的亚烷基二醇烷基醚的氢氧化铵的新显影剂溶液以及用于制备这种新型显影剂溶液的方法。

    Process for obtaining a lift-off imaging profile
    5.
    发明授权
    Process for obtaining a lift-off imaging profile 失效
    获取剥离成像轮廓的过程

    公开(公告)号：US5922503A

    公开(公告)日：1999-07-13

    申请号：US802807

    申请日：1997-02-18

    申请人： Mark A. Spak ,  Ralph R. Dammel ,  Michael Deprado

    发明人： Mark A. Spak ,  Ralph R. Dammel ,  Michael Deprado

    IPC分类号： G03F7/022 ,  G03F7/039 ,  G03F7/09 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  G11B7/24 ,  G03C1/492 ,  G03C5/00

    CPC分类号： G03F7/405 ,  G03F7/094

    摘要： A process for obtaining a lift-off imaging profile which comprises the steps of:a) providing a first layer of plasma etchable material wherein said material has a film thickness less than about 0.5 .mu.m (micrometer);b) providing a second layer comprising a photoimageable material on top of the first layer;c) forming a pattern in said second layer which comprises the steps of selectively exposing and developing the second layer;d) reacting the second layer with an organosilicon material; ande) etching the first layer isotropically in an oxygen atmosphere.

    摘要翻译： 一种用于获得剥离成像轮廓的方法，包括以下步骤：a）提供第一层等离子体可蚀刻材料，其中所述材料具有小于约0.5μm（微米）的膜厚度; b）在第一层的顶部上提供包含可光成像材料的第二层; c）在所述第二层中形成图案，其包括选择性地暴露和显影所述第二层的步骤; d）使第二层与有机硅材料反应; 和e）在氧气氛中各向同性蚀刻第一层。

    High temperature post exposure baking treatment for positive photoresist compositions
    8.
    发明授权
    High temperature post exposure baking treatment for positive photoresist compositions 失效
    用于正性光致抗蚀剂组合物的高温后曝光烘烤处理

    公开(公告)号：US4885232A

    公开(公告)日：1989-12-05

    申请号：US921879

    申请日：1986-10-17

    申请人： Mark A. Spak

    发明人： Mark A. Spak

    IPC分类号： G03F7/16

    CPC分类号： G03F7/168

    摘要： The invention provides a method for producing a photographic element which comprises coating a substrate with a positive working photosensitive composition which composition comprises an aqueous alkali soluble resin, a quinone diazide photosensitizer and a solvent composition, heat treating said coated substrate at a temperature of from about 20.degree. C. to about 100.degree. C. until substantially all of said solvent composition is removed; imagewise exposing said photosensitive composition to actinic radiation; baking said coated substrate at a temperature of from about 120.degree. C. to about 160.degree. C. for from about 15 seconds to about 90 seconds; and removing the exposed non-image areas of said composition with a suitable developer.

    摘要翻译： 本发明提供了一种用于生产照相元件的方法，该方法包括用正性感光组合物涂覆基材，所述组合物包含碱性水溶性树脂，醌二叠氮类光敏剂和溶剂组合物，在约 20℃至约100℃，直到基本上所有的所述溶剂组合物被除去; 将所述光敏组合物成像曝光于光化辐射; 在约120℃至约160℃的温度下烘烤所述涂覆的基材约15秒至约90秒; 以及用合适的显影剂除去所述组合物的暴露的非图像区域。

    Photoresist composition for imaging thick films
    10.
    发明授权
    Photoresist composition for imaging thick films 有权
    用于成像厚膜的光刻胶组合物

    公开(公告)号：US06852465B2

    公开(公告)日：2005-02-08

    申请号：US10393925

    申请日：2003-03-21

    申请人： Ralph R. Dammel ,  Stephen Meyer ,  Mark A. Spak

    发明人： Ralph R. Dammel ,  Stephen Meyer ,  Mark A. Spak

    IPC分类号： G03F7/004 ,  G03F7/016 ,  G03F7/022 ,  G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/0226 ,  G03F7/0048 ,  G03F7/0166

    摘要： The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.

    摘要翻译： 本发明涉及特别适用于成膜厚膜的光敏光致抗蚀剂组合物，其包含成膜碱溶性树脂，光活性化合物和表面活性剂，其含量范围为约2000ppm至约14,000ppm 全光刻胶。 优选地，光致抗蚀剂膜具有大于20微米的厚度。 本发明还提供了一种用于涂覆和成像本发明的感光组合物的方法。