公开(公告)号：US20080099664A1

公开(公告)日：2008-05-01

申请号：US11928912

申请日：2007-10-30

申请人： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Yoshiaki OIKAWA ,  Atsushi HIROSE ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Yoshiaki OIKAWA ,  Atsushi HIROSE ,  Masayuki SAKAKURA

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1443 ,  H01L27/1214 ,  H01L27/1266 ,  H01L31/02005 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1055 ,  H01L31/1892 ,  H01M10/46 ,  H03F3/08 ,  Y02E10/50

摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

摘要翻译： 一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。 第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。 此外，放大器电路是包括薄膜晶体管的电流镜电路。 此外，可以使用彩色胶片代替滤色器。

公开(公告)号：US20120299003A1

公开(公告)日：2012-11-29

申请号：US13568186

申请日：2012-08-07

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC分类号： H01L29/22 ,  H01L27/15 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

摘要翻译： 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

公开(公告)号：US20110147754A1

公开(公告)日：2011-06-23

申请号：US12970460

申请日：2010-12-16

申请人： Toshiyuki ISA ,  Atsushi HIROSE

发明人： Toshiyuki ISA ,  Atsushi HIROSE

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/124 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78678

摘要： Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.

摘要翻译： 公开了一种薄膜晶体管，包括：覆盖栅电极的栅极绝缘层; 栅极绝缘层上的微晶半导体区域; 微晶半导体上的一对非晶半导体区域; 在所述非晶半导体区域上的一对杂质半导体层; 以及杂质半导体层上的布线。 微晶半导体区域具有在栅极绝缘层侧具有突出和凹陷的表面。 微晶半导体区域包括未被无定形区域覆盖的第一微晶半导体区域和与非晶半导体区域接触的第二微晶半导体区域。 第一微晶半导体区域的厚度d1小于第二微晶半导体区域的厚度d2，d1大于或等于30nm。

公开(公告)号：US20110062543A1

公开(公告)日：2011-03-17

申请号：US12949301

申请日：2010-11-18

申请人： Kazuo NISHI ,  Tatsuya ARAO ,  Atsushi HIROSE ,  Yuusuke SUGAWARA ,  Naoto KUSUMOTO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI

发明人： Kazuo NISHI ,  Tatsuya ARAO ,  Atsushi HIROSE ,  Yuusuke SUGAWARA ,  Naoto KUSUMOTO ,  Daiki YAMADA ,  Hidekazu TAKAHASHI

IPC分类号： H01L31/06

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US20100140456A1

公开(公告)日：2010-06-10

申请号：US12707772

申请日：2010-02-18

申请人： Atsushi HIROSE

发明人： Atsushi HIROSE

IPC分类号： H03F3/08

CPC分类号： H03F1/086 ,  G05F3/262 ,  H01L21/84 ,  H01L27/12 ,  H01L2224/16225 ,  H03F2200/513

摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.

摘要翻译： 在半导体器件中，电流镜电路中设置有用于补偿寄生电阻的补偿电阻器，相对于电流镜电路中的寄生电阻器，电流镜电路至少包括两个薄膜晶体管。 薄膜晶体管各自具有沟道形成区域和源极或漏极区域的岛状半导体膜，栅极绝缘膜，栅极电极和源极或漏极，并且补偿电阻器补偿任何一个的寄生电阻器 栅电极，源电极和漏电极。 此外，每个补偿电阻器具有包含与栅极电极，源极或漏极电极或源极或漏极区域相同的材料的导电层。

公开(公告)号：US20120085892A1

公开(公告)日：2012-04-12

申请号：US13252226

申请日：2011-10-04

申请人： Atsushi HIROSE

发明人： Atsushi HIROSE

IPC分类号： H01L31/0376

CPC分类号： H01L31/02019 ,  G01J1/44 ,  H01L31/105 ,  H03F3/082

摘要： In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced.

摘要翻译： 在包括光电二极管和电流镜电路的光电转换装置中，与光电二极管并联设置二极管连接的晶体管。 晶体管用作用于快速放电存储在电流镜电路中的栅极电容中的电荷的泄漏路径。 因此，光电转换装置的响应速度增加，异常值的输出减少。

公开(公告)号：US20080237669A1

公开(公告)日：2008-10-02

申请号：US12053948

申请日：2008-03-24

申请人： Makoto YANAGISAWA ,  Atsushi HIROSE

发明人： Makoto YANAGISAWA ,  Atsushi HIROSE

IPC分类号： H01L31/113

CPC分类号： H04N5/35518 ,  G01J1/4204 ,  G01J1/44 ,  H01L27/14609

摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

摘要翻译： 包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，以及在栅极处产生的电压V OUT 根据在光电转换元件处产生的电流I

检测MOS晶体管的端子。 可以直接检测在MOS晶体管的栅极端产生的电压V OUT，从而可以比输出电压通过连接a 负载电阻等。

公开(公告)号：US20120145887A1

公开(公告)日：2012-06-14

申请号：US13401886

申请日：2012-02-22

申请人： Makoto YANAGISAWA ,  Atsushi HIROSE

发明人： Makoto YANAGISAWA ,  Atsushi HIROSE

IPC分类号： G01J1/44

CPC分类号： H04N5/35518 ,  G01J1/4204 ,  G01J1/44 ,  H01L27/14609

摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

摘要翻译： 包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到 根据在光电转换元件处产生的电流Ip。 可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

公开(公告)号：US20090289173A1

公开(公告)日：2009-11-26

申请号：US12465335

申请日：2009-05-13

申请人： Jun KOYAMA ,  Atsushi HIROSE

发明人： Jun KOYAMA ,  Atsushi HIROSE

IPC分类号： H03F3/08

CPC分类号： H03F3/08

摘要： The photoelectric conversion device includes a photoelectric conversion circuit for outputting photocurrent generated in a photoelectric conversion element as output voltage subjected to logarithmic compression by a first diode element, a reference voltage generation circuit for outputting reference voltage subjected to logarithmic compression by a second diode element in accordance with the amount of current flowing to a resistors an arithmetic circuit for outputting an output signal obtained by amplifying a difference between the output voltage output from the photoelectric conversion circuit and the reference voltage output from the reference voltage generation circuit, and an output circuit for outputting current corresponding to the logarithmically-compressed output voltage output from the photoelectric conversion circuit by the output signal.

摘要翻译： 光电转换装置包括用于输出在光电转换元件中产生的光电流作为由第一二极管元件进行对数压缩的输出电压的光电转换电路，用于输出由第二二极管元件进行对数压缩的参考电压的参考电压产生电路 根据流向电阻器的电流量，用于输出通过放大从光电转换电路输出的输出电压与从基准电压产生电路输出的参考电压之间的差异而获得的输出信号的运算电路，以及用于 输出与由光电转换电路输出的对数压缩的输出电压相对应的输出电流。

公开(公告)号：US20120299074A1

公开(公告)日：2012-11-29

申请号：US13477334

申请日：2012-05-22

申请人： Atsushi HIROSE ,  Hidekazu MIYAIRI ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

发明人： Atsushi HIROSE ,  Hidekazu MIYAIRI ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

IPC分类号： H01L27/06

CPC分类号： H01L29/78633 ,  H01L29/78648

摘要： A semiconductor device in which light leakage due to misalignment is prevented even when a black matrix layer is not expanded to a designed value or more is provided. In a semiconductor device including a dual-gate thin film transistor in which a semiconductor layer is sandwiched between a bottom gate electrode and a top gate electrode, the top gate electrode is formed of a first black matrix layer, and the top gate electrode overlaps with the semiconductor layer.

摘要翻译： 即使黑矩阵层不扩展到设计值以上，也能够防止由于未对准而导致的漏光的半导体装置。 在包括半导体层夹在底栅电极和顶栅电极之间的双栅极薄膜晶体管的半导体器件中，顶栅电极由第一黑矩阵层形成，顶栅电极与 半导体层。