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14 条记录 (耗时 0.149 秒)

    Electrophotographic recording material and method for the manufacture thereof
    5.
    发明授权
    Electrophotographic recording material and method for the manufacture thereof 失效
    电子记录记录材料及其制造方法

    公开(公告)号：US5108860A

    公开(公告)日：1992-04-28

    申请号：US552524

    申请日：1990-07-16

    申请人： Siegfried Birkle ,  Johann Kammermaier ,  Roland Rubner

    发明人： Siegfried Birkle ,  Johann Kammermaier ,  Roland Rubner

    IPC分类号： G03G5/147 ,  G03G5/08 ,  G03G5/082

    CPC分类号： G03G5/08285

    摘要： An electrophotographic recording material is applied on a plate-shaped or drum-shaped substrate in a layer structure of superposed layers which comprises a photoconductive layer and at least the uppermost layer is fashioned of amorphous, hydrogen-containing carbon. The amorphous, hydrogen-containing carbon layer is deposited from a radio frequency excited low-pressure plasma with gaseous hydrocarbon as a reaction gas and in which a self-bias DC voltage is superimposed on the radio frequency field. The a-c:H material obtained in this manner is semiconducting and has photoconductive properties so that it can be employed for the photoconductive layer of the electrophotographic recording material.

    摘要翻译： 将电子照相记录材料以包含光电导层的重叠层的层结构施加在板状或鼓形衬底上，并且至少最上层由无定形含氢碳形成。 从具有气态碳氢化合物的射频激发低压等离子体作为反应气体沉积无定形含氢碳层，其中自偏压直流电压叠加在射频场上。 以这种方式获得的a-c：H材料是半导体的并且具有光电导性质，使得其可用于电子照相记录材料的光电导层。

    Metal insulator semiconductor field effect transistor
    8.
    发明授权
    Metal insulator semiconductor field effect transistor 失效
    金属绝缘子半导体场效应晶体管

    公开(公告)号：US5196907A

    公开(公告)日：1993-03-23

    申请号：US924422

    申请日：1992-07-31

    申请人： Siegfried Birkle ,  Johann Kammermaier

    发明人： Siegfried Birkle ,  Johann Kammermaier

    IPC分类号： H01L21/04 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51

    CPC分类号： H01L21/28264 ,  H01L21/044 ,  H01L21/28167 ,  H01L21/3146 ,  H01L29/51 ,  H01L21/28194

    摘要： A Metal Insulator Semiconductor Field-Effect Transistor (MISFET) has an insulating layer arranged between a gate electrode and a semiconductor substrate. The insulating layer is a layer of amorphous, hydrogenated carbon (a-C:H) with a thickness--in the region of the gate electrode--of up to 1 .mu.m, and with a resistivity (.eta.) greater than or equal to 10.sup.6 .OMEGA..multidot.cm at the boundary surface to the semiconductor substrate. The semiconductor substrate consists of a semiconductor material other than silicon.

    摘要翻译： 金属绝缘体半导体场效应晶体管（MISFET）具有布置在栅电极和半导体衬底之间的绝缘层。 绝缘层是一层非晶氢化碳（aC：H），其厚度在栅电极的区域至多为1μm，电阻率（eta）大于或等于106欧米伽xcm 在与半导体基板的边界面。 半导体衬底由除硅之外的半导体材料组成。

    Device for measuring the level of a liquid in a container
    9.
    发明授权
    Device for measuring the level of a liquid in a container 失效
    用于测量容器中液体水平的装置

    公开(公告)号：US4299126A

    公开(公告)日：1981-11-10

    申请号：US75670

    申请日：1979-09-13

    申请人： Erwin Heuwieser ,  Johann Kammermaier ,  Peter Roedl

    发明人： Erwin Heuwieser ,  Johann Kammermaier ,  Peter Roedl

    IPC分类号： G01F23/24

    CPC分类号： G01F23/246

    摘要： A device for measuring the fill level in a container at least partially filled with a liquid, particularly for determining the liquid level in a fuel tank, in which a measuring resistor, comprising a metallic resistance layer having a great temperature coefficient of the specific resistance is carried by a carrier foil. The portion of the resistance layer disposed in the liquid remains cold, while that portion above the liquid is at a higher temperature, whereby the difference between the present resistance and that of an empty tank is proportional to the fill level within the tank. The change of resistance preferably is measured in connection with that of a comparator resistor which is not heated and compensates for temperature influence etc. An influence on the measurement due to convection in the fuel tank is prevented by means of covering sheets which are spaced a small distance from the resistors by means of suitable spacing strips.

    摘要翻译： 一种用于测量至少部分地充满液体的容器中的填充液位的装置，特别是用于确定燃料箱中的液位，其中包括具有大电阻温度系数的金属电阻层的测量电阻器是 由载体箔携带。 设置在液体中的电阻层的部分保持冷，而液体上方的部分处于较高的温度，由此当前电阻与空罐的电阻之间的差与罐内的填充量成比例。 电阻的变化优选与未加热的比较电阻器的电阻值相对应地进行测量，并且补偿温度影响等。由于通过覆盖片材间隔小的方式防止了由于燃料箱中的对流而对测量的影响 通过合适的间隔条与电阻器的距离。