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公开(公告)号：US4418348A
公开(公告)日：1983-11-29
申请号：US343015
申请日：1982-01-26
申请人： Hiroaki Tanaka , Sigeyuki Akita
发明人： Hiroaki Tanaka , Sigeyuki Akita
CPC分类号： G01D5/2415
摘要： A rotation detection apparatus has a first input side disk plate having first and second circumferentially arranged electrodes. An output side second disk plate has electrodes arranged in a circumferential direction to oppose the first plate. One of the disk plates is stationary and one is rotatable. A circuit is provided for supplying a periodic signal of a predetermined period to the first and second electrodes of the first plate. A rotation signal generating circuit is provided for detecting a phase condition between the signal at the electrodes of the second plate and the signal from the periodic signal supplying circuit and generating a rotation signal. A signal transmission device is also provided for transmitting a signal between the rotating plate and the stationary plate.
摘要翻译： 旋转检测装置具有第一输入侧盘板，其具有第一和第二周向布置的电极。 输出侧第二盘片具有沿圆周方向布置成与第一板相对的电极。 其中一个盘片是静止的，一个是可旋转的。 提供电路，用于将预定周期的周期信号提供给第一板的第一和第二电极。 提供旋转信号发生电路，用于检测第二板的电极处的信号和来自周期信号供给电路的信号之间的相位状态，并产生旋转信号。 还提供一种用于在旋转板和固定板之间传输信号的信号传输装置。
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公开(公告)号：US4384262A
公开(公告)日：1983-05-17
申请号：US248443
申请日：1981-03-27
申请人： Sigeyuki Akita , Hiroaki Tanaka
发明人： Sigeyuki Akita , Hiroaki Tanaka
摘要： In an oscillator circuit responsive to a predetermined temperature and including an astable multivibrator, a switching transistor inverts an output voltage from a first transistor of the multivibrator with a predetermined time delay, and a feedback capacitor is responsive to the inverted output voltage from the switching transistor to bias a reference capacitor connected between the output terminal of the first transistor and the input terminal of a second transistor of the multivibrator at opposite voltage polarity relative to that of a terminal voltage across the reference capacitor, a capacitance of the feedback capacitor being determined to turn off the second transistor due to the bias of the feedback capacitor when ambient temperature becomes the predetermined one under exposure of the second transistor to the ambient temperature.
摘要翻译： 在响应于预定温度并包括不稳定多谐振荡器的振荡器电路中，开关晶体管以预定的时间延迟来反转来自多谐振荡器的第一晶体管的输出电压，并且反馈电容器响应于来自开关晶体管的反相输出电压 将连接在第一晶体管的输出端子和多谐振荡器的第二晶体管的输入端子之间的参考电容器相对于参考电容器两端的端子电压相反的极性偏压，将反馈电容器的电容确定为 当第二晶体管暴露于环境温度时，当环境温度变为预定值时，由于反馈电容器的偏置，关闭第二晶体管。
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公开(公告)号：US4350981A
公开(公告)日：1982-09-21
申请号：US159855
申请日：1980-06-16
申请人： Hiroaki Tanaka , Sigeyuki Akita
发明人： Hiroaki Tanaka , Sigeyuki Akita
CPC分类号： G01D5/2415 , F02P7/061
摘要： A capacitive rotational position detecting apparatus includes a stationary disk plate and a rotatable disk plate in opposite relation. The stationary plate has a first and a second electrode on one surface, each of which is electrically connected through apertures by a metal film formed on the other surface of the stationary plate to reduce a distribution capacitance formed between metal films of the stationary and rotatable plates.
摘要翻译： 电容旋转位置检测装置具有相对的固定盘片和可旋转盘片。 固定板在一个表面上具有第一和第二电极，每个电极通过孔形成在固定板的另一个表面上的金属膜电连接，以减少在静止和可旋转板的金属膜之间形成的分配电容 。
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公开(公告)号：US4316158A
公开(公告)日：1982-02-16
申请号：US109916
申请日：1980-01-07
申请人： Sigeyuki Akita , Hiroaki Tanaka
发明人： Sigeyuki Akita , Hiroaki Tanaka
CPC分类号： H03K3/354 , H03K3/2823 , Y10S331/03
摘要： In an oscillator circuit including a variable capacitor for inverting a pair of inverters oppositely to each other with a time period defined by a resistance value of a resistor and a capacitance of the variable capacitor, an additional capacitor is provided to be biased by an inverter function of an additional inverter in voltage polarity opposite to that of the variable capacitor.
摘要翻译： 在包括可变电容器的振荡器电路中，由可变电容器的电阻值和可变电容器的电容定义的时间间隔相互反向的一对反相器，提供一个附加的电容器以由反相器功能 的电压极性与可变电容相反的额外的逆变器。
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公开(公告)号：US10962776B2
公开(公告)日：2021-03-30
申请号：US16779843
申请日：2020-02-03
IPC分类号： G02B27/01
摘要： A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.
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公开(公告)号：US09372433B2
公开(公告)日：2016-06-21
申请号：US14830352
申请日：2015-08-19
申请人： Hiroyuki Suhara , Hiroaki Tanaka
发明人： Hiroyuki Suhara , Hiroaki Tanaka
IPC分类号： G03G15/043 , B41J2/385 , B41J2/435
CPC分类号： G03G15/043 , B41J2/385 , B41J2/435
摘要： An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.
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公开(公告)号：US20150054075A1
公开(公告)日：2015-02-26
申请号：US14501244
申请日：2014-09-30
申请人： Tadahiro Ohmi , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Hiroaki Tanaka
IPC分类号： H01L29/10 , H01L29/417 , H01L29/45 , H01L29/78
CPC分类号： H01L29/1087 , H01L27/1203 , H01L29/41733 , H01L29/458 , H01L29/7816
摘要： There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
摘要翻译： 提供了一种半导体器件。 n型晶体管形成在硅衬底的（551）表面上。 与n型晶体管的扩散区域（重掺杂区域）接触的硅化物层区域的厚度不大于5nm。 与硅化物层接触的金属层区域的厚度为25nm（含）〜400nm（含）。 硅化物层区域和扩散区域之间的势垒高度在该厚度关系中具有最小值。
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公开(公告)号：US08836150B2
公开(公告)日：2014-09-16
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498 , H01L23/00 , H01L29/739 , H01L29/417
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译： 在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。 上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。
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公开(公告)号：US08704937B2
公开(公告)日：2014-04-22
申请号：US13837623
申请日：2013-03-15
申请人： Keiji Matsusaka , Hiroaki Tanaka
发明人： Keiji Matsusaka , Hiroaki Tanaka
CPC分类号： G02B3/00 , G02B3/04 , G02B13/004 , G02B13/18 , H04N5/23245
摘要： An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55
摘要翻译： 成像光学系统，成像装置和数字装置具有正，负，正和负折射力的四透镜结构。 第二透镜元件的最大有效直径处的表面位置位于物体侧，而不是其表面顶点。 第四透镜元件在光轴和第四透镜元件的交点以外的位置具有拐点。 光学系统满足以下条件。 0.7
72＆ ; 4> 50和0.55 -
公开(公告)号：US20130241084A1
公开(公告)日：2013-09-19
申请号：US13989962
申请日：2010-11-29
申请人： Hiroaki Tanaka
发明人： Hiroaki Tanaka
IPC分类号： H01L23/498
CPC分类号： H01L23/498 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/417 , H01L29/41741 , H01L29/7397 , H01L2224/04042 , H01L2224/05553 , H01L2224/05557 , H01L2224/05624 , H01L2224/451 , H01L2224/48091 , H01L2224/48132 , H01L2224/4847 , H01L2224/48491 , H01L2224/49175 , H01L2224/85205 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要翻译： 在本说明书中公开的半导体器件具有包括其中形成半导体元件的元件区域和形成在半导体衬底的元件区域的上表面上的上表面电极的半导体衬底。 上表面电极具有比第一厚度区域厚的第一厚度区域和第二厚度区域，并且接合线接合在第二厚度区域上。
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