METHOD AND SUPPORT DEVICE FOR MEASURING JAWBONE MINERAL DENSITY
    1.
    发明申请
    METHOD AND SUPPORT DEVICE FOR MEASURING JAWBONE MINERAL DENSITY 失效
    用于测量JAWBONE矿物密度的方法和支持装置

    公开(公告)号:US20100142674A1

    公开(公告)日:2010-06-10

    申请号:US12506371

    申请日:2009-07-21

    摘要: There are provided a method and support device for measuring jawbone mineral density using a jawbone X-ray image. The method for measuring jawbone mineral density includes: obtaining a jawbone X-ray image using a support device for jawbone; defining a region of interest from the obtained jawbone X-ray image; and measuring jawbone mineral density from the defined region of interest. Therefore, the support device for measuring jawbone mineral density may be useful to measure jawbone mineral density with a jawbone X-ray imaging device, which has been widely used in dental clinics, by using the method.

    摘要翻译: 提供了使用颌骨X射线图像来测量颚骨矿物质密度的方法和支持装置。 用于测量颚骨矿物质密度的方法包括:使用颚骨支撑装置获得颌骨X射线图像; 从所获得的颌骨X射线图像中定义感兴趣区域; 并从定义的感兴趣区域测量颚骨矿物质密度。 因此,用于测量颚骨矿物质密度的支撑装置可用于通过使用该方法在牙科诊所广泛使用的颌骨X射线成像装置测量颚骨矿物质密度。

    METHOD OF SEGMENTING LESIONS IN IMAGES
    2.
    发明申请
    METHOD OF SEGMENTING LESIONS IN IMAGES 有权
    在图像中分割LESIONS的方法

    公开(公告)号:US20120128224A1

    公开(公告)日:2012-05-24

    申请号:US13285231

    申请日:2011-10-31

    IPC分类号: G06K9/34

    摘要: The method of segmenting a lesion in an image according to the present invention includes the steps of: obtaining an image of a region of interest from an image of a lesion; adjusting the contrast of the obtained image of the region of interest such that the contrast changes according to the distance from the center of the region of interest; removing noise from the image whose contrast is adjusted; and separating the region of the lesion from the noise-removed image. In the step of adjusting the contrast, the image is adjusted such that the contrast is increased as it goes away from the center of the region of interest, and thus it is possible to segment the lesion while maintaining the original shape of the lesion, thereby reliably segmenting the lesion even in the case where the inside of the lesion is not uniform.

    摘要翻译: 根据本发明的分割图像中的病变的方法包括以下步骤:从病变的图像获得感兴趣区域的图像; 调整所获取的感兴趣区域的图像的对比度,使得对比度根据与感兴趣区域的中心的距离而变化; 从对比度调整的图像中去除噪声; 并将病变的区域与去除噪声的图像分开。 在调整对比度的步骤中,调整图像,使得对比度随着离开感兴趣区域的中心而增加,因此可以在保持病变的原始形状的同时分割病变,由此 即使在病变的内部不均匀的情况下也可以可靠地分割病变。

    NON-INTRUSIVE WEARABLE RESPIRATORY FAILURE ALARM APPARATUS AND METHOD THEREOF
    5.
    发明申请
    NON-INTRUSIVE WEARABLE RESPIRATORY FAILURE ALARM APPARATUS AND METHOD THEREOF 审中-公开
    无刺激性的呼吸衰竭报警装置及其方法

    公开(公告)号:US20120136232A1

    公开(公告)日:2012-05-31

    申请号:US13304523

    申请日:2011-11-25

    IPC分类号: A61B5/113 A61B5/08 A61B5/053

    摘要: A non-intrusive wearable respiratory failure alarm apparatus and method capable of detecting a user's respiratory failure state by estimating a change in a user's respiratory rate, while minimizing restrictions on a user's behavior are provided. The non-intrusive wearable respiratory failure alarm apparatus includes: a chest girth measurement unit including one or more resistive electro-threads attached to or worn on a user's chest, and generating a resistance value corresponding to the user's chest girth through the resistive electro-threads; a signal processing unit calculating a user's respiratory rate and whether or not the user is in respiratory failure by referring to the resistance value; and an output unit providing information regarding the user's respiratory rate and/or information regarding whether or not the user is in respiratory failure to the user or a monitoring device.

    摘要翻译: 提供了一种能够通过估计用户呼吸频率的变化来检测用户的呼吸衰竭状态的非侵入式穿戴式呼吸衰竭报警装置和方法,同时最小化对用户行为的限制。 非侵入性穿戴性呼吸衰竭报警装置包括:胸围测量单元,其包括附着或佩戴在使用者胸部上的一个或多个电阻电线,并且通过电阻电线产生对应于使用者胸围的电阻值 ; 信号处理单元,通过参照电阻值来计算用户的呼吸频率以及用户是否处于呼吸衰竭中; 以及输出单元,其提供关于用户呼吸频率的信息和/或关于用户是否对用户呼吸衰竭或监视设备的信息。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130105875A1

    公开(公告)日:2013-05-02

    申请号:US13447034

    申请日:2012-04-13

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    IPC分类号: H01L27/108

    摘要: A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.

    摘要翻译: 提供一种半导体器件及其制造方法,以便能够容易地形成位线,增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括:第一柱和第二柱,每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号:US20120025296A1

    公开(公告)日:2012-02-02

    申请号:US12969537

    申请日:2010-12-15

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    IPC分类号: H01L27/108 H01L21/28

    CPC分类号: H01L27/10826 H01L27/10885

    摘要: A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns.

    摘要翻译: 公开了一种半导体器件及其制造方法。 制造半导体器件的方法包括:通过选择性蚀刻半导体衬底,形成多个第一柱状图案,每个第一柱状图案包括侧壁接触; 在两个相邻的第一柱状图案之间的区域的下部形成掩埋位线; 通过选择性地蚀刻第一柱图案的上部来形成多个第二柱图案; 以及形成沿与所述位线交叉的方向布置的栅极耦合第二柱状图案,所述栅极包围所述第二柱状图案。