公开(公告)号：US20050150452A1

公开(公告)日：2005-07-14

申请号：US10757021

申请日：2004-01-14

申请人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

发明人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

IPC分类号： C23C16/44 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/4412

摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.

摘要翻译： 本发明提供了一种用于半导体处理室的处理套件。 处理室是真空处理室，其包括限定内部处理区域的室主体。 处理区域接收用于处理的基板，并且还支持处理套件的设备件。 该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。 泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。 本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。 在一种布置中，室是串联处理室。

公开(公告)号：US20050287771A1

公开(公告)日：2005-12-29

申请号：US11065464

申请日：2005-02-24

申请人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Deenesh Padhi ,  Andy Luan ,  Sum-Yee Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Hichem M'Saad ,  Yuxiang Wang ,  Michael Kwan

发明人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Deenesh Padhi ,  Andy Luan ,  Sum-Yee Tang ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Hichem M'Saad ,  Yuxiang Wang ,  Michael Kwan

IPC分类号： C23C16/505 ,  H01L21/314 ,  H01L21/768 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36

CPC分类号： C23C16/505 ,  H01L21/3146 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829

摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

摘要翻译： 提供用于沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生 处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。

公开(公告)号：US20080084650A1

公开(公告)日：2008-04-10

申请号：US11866646

申请日：2007-10-03

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US20060014397A1

公开(公告)日：2006-01-19

申请号：US10891355

申请日：2004-07-13

申请人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Heraldo Botelho

发明人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Heraldo Botelho

IPC分类号： H01L21/469

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3146

摘要： A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

公开(公告)号：US20060222771A1

公开(公告)日：2006-10-05

申请号：US11424712

申请日：2006-06-16

申请人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Heraldo Botelho

发明人： Martin Seamons ,  Wendy Yeh ,  Sudha Rathi ,  Heraldo Botelho

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/3146

摘要： A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

摘要翻译： 提供一种沉积在诸如氧化物，氮化物，碳化硅，碳掺杂氧化物等介电材料上的无定形碳层或诸如钨，铝或多晶硅的金属层的方法。 该方法包括使用室调节，调节膜厚度可变，间距更宽，可变工艺气体流动，惰性气体沉积后吹扫和沉积后等离子体吹扫等，使沉积无定形碳膜 在低沉积温度下可能没有任何缺陷或颗粒污染。

公开(公告)号：US20060162661A1

公开(公告)日：2006-07-27

申请号：US11040712

申请日：2005-01-22

申请人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

发明人： Kee Jung ,  Dale Du Bois ,  Lun Tsuei ,  Lihua Huang ,  Martin Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Kwan

IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  B08B6/00

CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

公开(公告)号：US06843881B2

公开(公告)日：2005-01-18

申请号：US10115526

申请日：2002-04-02

申请人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

发明人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  G01N21/76 ,  G05D27/02 ,  H01L21/306

CPC分类号： G05D27/02 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/76

摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

摘要翻译： 在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及 排气以排出清洁气体。 检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。 控制器接收信号并评估信号以确定清洁过程的端点。

公开(公告)号：US06868856B2

公开(公告)日：2005-03-22

申请号：US09905515

申请日：2001-07-13

申请人： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

发明人： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  B08B6/00 ,  H01L21/306

CPC分类号： H01J37/32862 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/52 ,  Y10S134/902

摘要： Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.

摘要翻译： 半导体加工设备清洗方法及装置。 该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。 所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。 在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。 解离的气体与室内的污染物结合，并与污染物一起从室中排出。

公开(公告)号：US6060397A

公开(公告)日：2000-05-09

申请号：US502688

申请日：1995-07-14

申请人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

发明人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

IPC分类号： C23C16/44 ,  C23C16/56 ,  H01L21/203 ,  H01L21/205 ,  H01L21/304 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.

摘要翻译： 提供了从化学气相沉积装置（10）清洗残留物的方法（100）。 本方法（100）包括将清洁气体如N 2，C 2 F 6和O 2的腔室（12）引入并从清洗气体形成等离子体。 本方法还包括通过从残余物和至少一种清洁气体形成挥发性产物来从室12的内表面去除残留物。

公开(公告)号：US20060105106A1

公开(公告)日：2006-05-18

申请号：US11055936

申请日：2005-02-11

申请人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

发明人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

IPC分类号： C23C16/00 ,  B05D3/00 ,  H05H1/24

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/3185 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

摘要翻译： 在基板上形成应力膜。 将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。 还可以加入稀释气体如氮气。 沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。 另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。 还描述了用于沉积应力材料的脉冲等离子体方法。