-
公开(公告)号：US07679963B2
公开(公告)日：2010-03-16
申请号：US11576416
申请日：2005-07-08
IPC分类号： G11C16/06
CPC分类号： H01L29/7391 , G11C8/08 , G11C16/08 , H01L27/088 , H01L27/105 , H01L27/1203
摘要： An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
摘要翻译： 公开了一种具有驱动电路的集成电路。 一个实施例提供了一种具有用于EEPROM的驱动电路的集成存储器电路装置。 在一个实施例中，驱动电路包含隧道场效应晶体管，并且特别可以在小芯片区域上产生。
-
2.发明申请Integrated Circuit Arrangement Comprising a Field Effect Transistor, Especially a Tunnel Field Effect Transistor 有权包括场效应晶体管，特别是隧道场效应晶体管的集成电路布置公开(公告)号：US20090101975A1
公开(公告)日：2009-04-23
申请号：US11816822
申请日：2005-12-09
申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
发明人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
IPC分类号： H01L29/02
CPC分类号： H01L27/0886 , H01L21/823418 , H01L21/823462 , H01L27/1052 , H01L27/1203 , H01L29/66795 , H01L29/7391 , H01L29/7392 , H01L29/78 , H01L29/785 , H01L29/7854 , H01L29/7856
摘要： An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.
摘要翻译： 具体地说，具有与同一集成电路装置（10）上的其它晶体管（T2）相比具有较厚栅极电介质（GD1）的隧道场效应晶体管的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域（D1，S1）之间的界面。
-
公开(公告)号：US20080068895A1
公开(公告)日：2008-03-20
申请号：US11576416
申请日：2005-07-08
IPC分类号： G11C11/34 , H01L29/08 , H03K17/687
CPC分类号： H01L29/7391 , G11C8/08 , G11C16/08 , H01L27/088 , H01L27/105 , H01L27/1203
摘要： An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
摘要翻译： 公开了一种具有驱动电路的集成电路。 一个实施例提供了一种具有用于EEPROM的驱动电路的集成存储器电路装置。 在一个实施例中，驱动电路包含隧道场效应晶体管，并且特别可以在小芯片区域上产生。
-
4.发明授权Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor 有权集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管公开(公告)号：US08629500B2
公开(公告)日：2014-01-14
申请号：US11816822
申请日：2005-12-09
申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
发明人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
IPC分类号： H01L29/06
CPC分类号： H01L27/0886 , H01L21/823418 , H01L21/823462 , H01L27/1052 , H01L27/1203 , H01L29/66795 , H01L29/7391 , H01L29/7392 , H01L29/78 , H01L29/785 , H01L29/7854 , H01L29/7856
摘要： An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.
摘要翻译： 具体地说，具有与同一集成电路装置（10）上的其它晶体管（T2）相比具有较厚栅极电介质（GD1）的隧道场效应晶体管的解释。 作为替代或另外，所述隧道场效应晶体管具有在沟道形成区域的相对远侧的栅极区域或隧道场效应晶体管的连接区域（D1，S1）之间的界面。
-
5.发明申请Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit 有权用于接通半导体电路和对应的半导体电路的电压源的方法和装置公开(公告)号：US20070085573A1
公开(公告)日：2007-04-19
申请号：US11498505
申请日：2006-08-03
申请人： Stephan Henzler , Jorg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
发明人： Stephan Henzler , Jorg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
IPC分类号： H03L7/00
CPC分类号： H03K17/567 , H03K17/163 , H03K17/687
摘要： A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要翻译： 公开了一种用于接通半导体电路的电压域的电压源的方法和装置。 电压源通过可切换元件连接到半导体电路的电源电压。 可切换元件被激活，使得为了接通电压域的电压源，通过可切换元件的电流以至少一个中间值，特别是逐步的方式逐渐升高。
-
6.发明申请公开(公告)号：US20070038876A1
公开(公告)日：2007-02-15
申请号：US11454302
申请日：2006-06-15
申请人： Jorg Berthold , Geor Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
发明人： Jorg Berthold , Geor Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
IPC分类号： G06F1/00
CPC分类号： G06F1/3203 , G06F1/3237 , G06F1/3287 , Y02D10/128 , Y02D10/171
摘要： An integrated circuit includes functional blocks, a power control unit controlling the provision of power to the different functional blocks of the integrated circuit, a detecting unit detecting if a turned off functional block is to be turned on, and a clock signal control unit controlling the provision of the clock signal for the functional blocks. The clock signal control unit interrupts the clock signal for the activated functional blocks of the integrated circuit for a predetermined number of clock cycles. The power control unit provides power to the turned off functional block during the interrupted clock cycles.
摘要翻译： 集成电路包括功能块，控制向集成电路的不同功能块提供电力的功率控制单元，检测关闭功能块是否被接通的检测单元，以及控制该功能块的时钟信号控制单元 提供功能块的时钟信号。 时钟信号控制单元在预定数量的时钟周期中断集成电路的激活功能块的时钟信号。 电源控制单元在中断的时钟周期期间向关闭的功能块供电。
-
7.发明授权公开(公告)号：US07757109B2
公开(公告)日：2010-07-13
申请号：US11454302
申请日：2006-06-15
申请人： Jörg Berthold , Georg Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
发明人： Jörg Berthold , Georg Georgakos , Stephan Henzler , Thomas Nirschl , Matthias Schobinger , Doris Schmitt-Landsiedel
CPC分类号： G06F1/3203 , G06F1/3237 , G06F1/3287 , Y02D10/128 , Y02D10/171
摘要： An integrated circuit includes functional blocks, a power control unit controlling the provision of power to the different functional blocks of the integrated circuit, a detecting unit detecting if a turned off functional block is to be turned on, and a clock signal control unit controlling the provision of the clock signal for the functional blocks. The clock signal control unit interrupts the clock signal for the activated functional blocks of the integrated circuit for a predetermined number of clock cycles. The power control unit provides power to the turned off functional block during the interrupted clock cycles.
摘要翻译： 集成电路包括功能块，控制向集成电路的不同功能块提供电力的功率控制单元，检测关闭功能块是否被接通的检测单元，以及控制该功能块的时钟信号控制单元 提供功能块的时钟信号。 时钟信号控制单元在预定数量的时钟周期中断集成电路的激活功能块的时钟信号。 电源控制单元在中断的时钟周期期间向关闭的功能块供电。
-
8.发明授权Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit 有权用于接通半导体电路和对应的半导体电路的电压源的方法和装置公开(公告)号：US07427882B2
公开(公告)日：2008-09-23
申请号：US11498505
申请日：2006-08-03
申请人： Stephan Henzler , Jörg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
发明人： Stephan Henzler , Jörg Berthold , Christian Pacha , Doris Schmitt-Landsiedel , Thomas Nirschl , Georg Georgakos
IPC分类号： H03L7/00
CPC分类号： H03K17/567 , H03K17/163 , H03K17/687
摘要： A method and an apparatus for switching on a voltage supply of a voltage domain of a semiconductor circuit is disclosed. A voltage supply is connected to a supply voltage of the semiconductor circuit by means of a switchable element. The switchable element is activated in such a way that, for switching on the voltage supply of the voltage domain, a current through the switchable element rises progressively with at least one intermediate value, in particular stepwise manner.
摘要翻译： 公开了一种用于接通半导体电路的电压域的电压源的方法和装置。 电压源通过可切换元件连接到半导体电路的电源电压。 可切换元件被激活，使得为了接通电压域的电压源，通过可切换元件的电流以至少一个中间值，特别是逐步的方式逐渐升高。
-
公开(公告)号：US07099218B2
公开(公告)日：2006-08-29
申请号：US10429149
申请日：2003-05-02
CPC分类号： G11C11/419 , G11C7/062 , G11C2207/063
摘要： A differential current evaluation circuit has a differential amplifier and a circuit for setting an input resistance of the current evaluation circuit. The circuit is connected to the outputs and the inputs of the differential amplifier and to signal lines. A sense amplifier circuit has a circuit section, in which a signal is available at an output in a temporally continuous manner even if, after the deactivation of the circuit connected upstream, a signal, in particular a signal supplied by the current evaluation circuit, is no longer present at its input. The differential current evaluation circuit and the sense amplifier circuit are disposed in a circuit configuration for reading out and evaluating a memory state of a semiconductor memory cell. The current evaluation circuit can be activated by a circuit section for automatic deactivation before a read operation and be automatically deactivated directly after the read operation has ended.
-
公开(公告)号：US5939945A
公开(公告)日：1999-08-17
申请号：US900345
申请日：1997-07-25
摘要： Amplifier circuits having at least one neuron MOS transistor in which a coupling gate is connected to an amplifier output and at least one further coupling gate is connected with a respective amplifier input are provided. The amplifier circuit exhibits a linear transmission behavior even in large-signal operation and can be constructed using relatively few components. Furthermore, the gain is easy to set.
摘要翻译： 提供了具有至少一个神经元MOS晶体管的放大器电路，其中耦合栅极连接到放大器输出和至少一个另外的耦合栅极与相应的放大器输入连接。 放大器电路即使在大信号操作中也表现出线性传输行为，并且可以使用相对较少的部件来构造。 此外，增益容易设定。
-
-
-
-
-
-
-
-
-
搜索结果
38 条记录 (耗时 0.02 秒)
