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公开(公告)号:US20120225218A1
公开(公告)日:2012-09-06
申请号:US13347598
申请日:2012-01-10
IPC分类号: C23C16/503 , C23C16/26 , C23C16/24 , C23C16/509 , C23C16/06
CPC分类号: C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译: 所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。 通过控制气体组分的引入顺序,可以实现气相化学的优异控制。 它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。 这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。
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公开(公告)号:US20110005681A1
公开(公告)日:2011-01-13
申请号:US12832947
申请日:2010-07-08
CPC分类号: H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译: 适用于半导体,导体或绝缘膜的沉积,蚀刻或处理的等离子体处理的装置和方法。 等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。 气体可以在电动电极附近注入,该电极分解并产生朝向衬底区域流动的活化物质。 然后,该气体在动力电极和基底之间流入延伸的过程区域,以高速率与基底以高速率提供受控且连续的反应性,有效利用反应物原料。 气体通过电源电极或电极和分配器之间的通道耗尽。
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公开(公告)号:US20110006040A1
公开(公告)日:2011-01-13
申请号:US12832934
申请日:2010-07-08
CPC分类号: H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译: 适用于半导体,导体或绝缘膜的沉积,蚀刻或处理的等离子体处理的装置和方法。 等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。 气体可以在电动电极附近注入,该电极分解并产生朝向衬底区域流动的活化物质。 然后,该气体在动力电极和基底之间流入延伸的过程区域,以高速率与基底以高速率提供受控且连续的反应性,有效利用反应物原料。 气体通过电源电极或电极和分配器之间的通道耗尽。
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公开(公告)号:US20110005682A1
公开(公告)日:2011-01-13
申请号:US12832953
申请日:2010-07-08
IPC分类号: C23F1/08
CPC分类号: H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译: 适用于半导体,导体或绝缘膜的沉积,蚀刻或处理的等离子体处理的装置和方法。 等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。 气体可以在电动电极附近注入,该电极分解并产生朝向衬底区域流动的活化物质。 然后,该气体在动力电极和基底之间流入延伸的过程区域,以高速率与基底以高速率提供受控且连续的反应性,有效利用反应物原料。 气体通过电源电极或电极和分配器之间的通道耗尽。
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公开(公告)号:US10049859B2
公开(公告)日:2018-08-14
申请号:US12832947
申请日:2010-07-08
IPC分类号: C23C16/24 , C23C16/26 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/54 , H01J37/32 , H01L21/67
摘要: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
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公开(公告)号:US08765232B2
公开(公告)日:2014-07-01
申请号:US13347598
申请日:2012-01-10
CPC分类号: C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译: 所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。 通过控制气体组分的引入顺序,可以实现气相化学的优异控制。 它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。 这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。
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公开(公告)号:US08697197B2
公开(公告)日:2014-04-15
申请号:US12832934
申请日:2010-07-08
IPC分类号: C23C16/503
CPC分类号: H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译: 适用于半导体,导体或绝缘膜的沉积,蚀刻或处理的等离子体处理的装置和方法。 等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。 气体可以在电动电极附近注入,该电极分解并产生朝向衬底区域流动的活化物质。 然后,该气体在动力电极和基底之间流入延伸的过程区域,以高速率与基底以高速率提供受控且连续的反应性,有效利用反应物原料。 气体通过电源电极或电极和分配器之间的通道耗尽。
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公开(公告)号:US06624082B2
公开(公告)日:2003-09-23
申请号:US09907127
申请日:2001-07-16
申请人: Laizhong Luo , Ying Holden , Rene George , Robert Guerra , Allan Wiesnoski , Nicole Kuhl , Craig Ranft , Sai Mantripragada
发明人: Laizhong Luo , Ying Holden , Rene George , Robert Guerra , Allan Wiesnoski , Nicole Kuhl , Craig Ranft , Sai Mantripragada
IPC分类号: H01L21302
CPC分类号: H01L21/67069 , H01J37/3244 , H01J37/32633
摘要: A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.
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公开(公告)号:US20090082895A1
公开(公告)日:2009-03-26
申请号:US11859752
申请日:2007-09-22
IPC分类号: H01L21/677 , B25J13/00 , B25J15/00 , G06F19/00
CPC分类号: H01L21/67742 , H01L21/67766 , H01L21/67778 , H01L21/68 , H01L21/681
摘要: An integrated high speed robotic mechanism is disclosed for improving transport equipment, integrating an object movement with other functionalities such as alignment or identification. The disclosed integrated robot assembly typically comprises an end effector for moving the object in and out of a chamber, a rotation chuck incorporated on the robot body to provide centering and theta alignment capability, and an optional identification subsystem for identifying the object during transport. The present invention also discloses a transfer robot system, employing a plurality of integrated robot assemblies; a transfer system where a transfer robot system can service a plurality of connected chambers such as FOUP or FOSB; a front end module (FEM); or a sorter system. Through the use of these incorporated capabilities into the moving robot, single object transfer operations can exceed 500 parts per hour.
摘要翻译: 公开了一种集成的高速机器人机构,用于改善运输设备,将物体运动与诸如对准或识别的其它功能相结合。 所公开的集成机器人组件通常包括用于将物体移入和移出室的端部执行器,结合在机器人主体上以提供定心和θ对准能力的旋转卡盘,以及用于在运输期间识别物体的可选标识子系统。 本发明还公开了一种采用多个集成的机器人组件的传送机器人系统; 传送系统,其中传送机器人系统可以服务于诸如FOUP或FOSB的多个连接的室; 前端模块(FEM); 或分拣机系统。 通过将这些结合的能力应用于移动机器人,单个物体传送操作可以超过500个小时。
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公开(公告)号:US07976263B2
公开(公告)日:2011-07-12
申请号:US11859752
申请日:2007-09-22
CPC分类号: H01L21/67742 , H01L21/67766 , H01L21/67778 , H01L21/68 , H01L21/681
摘要: An integrated high speed robotic mechanism is disclosed for improving transport equipment, integrating an object movement with other functionalities such as alignment or identification. The disclosed integrated robot assembly typically comprises an end effector for moving the object in and out of a chamber, a rotation chuck incorporated on the robot body to provide centering and theta alignment capability, and an optional identification subsystem for identifying the object during transport. The present invention also discloses a transfer robot system, employing a plurality of integrated robot assemblies; a transfer system where a transfer robot system can service a plurality of connected chambers such as FOUP or FOSB; a front end module (FEM); or a sorter system. Through the use of these incorporated capabilities into the moving robot, single object transfer operations can exceed 500 parts per hour.
摘要翻译: 公开了一种集成的高速机器人机构,用于改善运输设备,将物体运动与诸如对准或识别的其他功能相结合。 所公开的集成机器人组件通常包括用于将物体移入和移出室的端部执行器,结合在机器人主体上以提供定心和θ对准能力的旋转卡盘,以及用于在运输期间识别物体的可选标识子系统。 本发明还公开了一种采用多个集成的机器人组件的传送机器人系统; 传送系统,其中传送机器人系统可以服务于诸如FOUP或FOSB的多个连接的室; 前端模块(FEM); 或分拣机系统。 通过将这些结合的能力应用于移动机器人,单个物体传送操作可以超过500个小时。
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