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    MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE
    1.
    发明申请
    MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE 有权
    MICROWAVE等离子体反应器和合成金刚石制造基材

    公开(公告)号：US20140234556A1

    公开(公告)日：2014-08-21

    申请号：US13994813

    申请日：2011-12-14

    申请人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/27 ,  C23C16/52 ,  C23C16/511

    CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

    摘要翻译： 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。

    Microwave plasma reactors and substrates for synthetic diamond manufacture
    2.
    发明授权
    Microwave plasma reactors and substrates for synthetic diamond manufacture 有权
    微波等离子体反应器和合成金刚石制造用基材

    公开(公告)号：US08859058B2

    公开(公告)日：2014-10-14

    申请号：US13994813

    申请日：2011-12-14

    申请人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/00 ,  C23C16/27 ,  C23C16/52 ,  C23C16/511

    CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

    摘要翻译： 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。

    MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
    6.
    发明申请
    MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
    用于制造合成金刚石材料的微波等离子体反应器

    公开(公告)号：US20150030786A1

    公开(公告)日：2015-01-29

    申请号：US13994903

    申请日：2011-12-14

    申请人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

    发明人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort

    IPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/27

    CPC分类号： C23C16/45563 ,  C23C16/274 ,  C23C16/45504 ,  C23C16/45565 ,  C23C16/511 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449

    摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm2, wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane; and a nozzle area ratio of equal to or greater than 10, wherein the nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.

    摘要翻译： 一种通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 设置在等离子体室中的衬底保持器，用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列，所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴，用于将工艺气体引向所述衬底保持器，所述气体入口喷嘴阵列包括：至少六个气体入口喷嘴， 或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2，其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数 所述平面上的密度; 并且喷嘴面积比等于或大于10，其中通过将喷嘴投影到平行于等离子体室的中心轴的平面的平面上来测量喷嘴面积比，测量气体入口喷嘴面积的总面积 在所述平面上除以总喷嘴数量以给出与每个喷嘴相关联的区域，并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。

    Coated Speaker Dome
    7.
    发明申请
    Coated Speaker Dome 有权
    涂层扬声器圆顶

    公开(公告)号：US20080130937A1

    公开(公告)日：2008-06-05

    申请号：US11813959

    申请日：2006-01-12

    申请人： Neil Perkins ,  Charles Simon James Pickles ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    发明人： Neil Perkins ,  Charles Simon James Pickles ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    IPC分类号： H04R1/02

    CPC分类号： H04R7/127 ,  Y10T428/12431

    摘要： A rigid three-dimensional component such as a speaker dome is formed of diamond, preferably fabricated to net shape by CVD diamond synthesis, and includes a coating on one or more major surfaces thereof. The coating is designed to enhance the performance and/or to alter the appearance of the component. In particular, the coating is designed to act as a damping medium and/or provide aesthetic qualities to the component.

    摘要翻译： 诸如扬声器拱顶的刚性三维部件由金刚石形成，优选通过CVD金刚石合成制成网状，并且在其一个或多个主表面上包括涂层。 该涂层被设计成增强部件的性能和/或改变部件的外观。 特别地，涂层被设计成用作阻尼介质和/或提供元件的美学品质。

    DIAMOND COATED SURFACES
    9.
    发明申请
    DIAMOND COATED SURFACES 审中-公开
    钻石涂层表面

    公开(公告)号：US20090208666A1

    公开(公告)日：2009-08-20

    申请号：US11577766

    申请日：2005-10-20

    申请人： Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart

    发明人： Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart

    IPC分类号： B05D3/06

    CPC分类号： C23C16/274 ,  C23C16/0263

    摘要： A method of producing a diamond coated surface on a substrate. A surface of the substrate is prepared by exposing it to a power beam, such as an electron beam, to increase the surface area and surface roughness. Such preparation may also provide the surface with three dimensional features onto which a diamond layer can adhere and mechanically lock. Adhesion of a diamond layer applied to the prepared surface is increased.

    摘要翻译： 一种在基材上制备金刚石涂层表面的方法。 通过将其暴露于诸如电子束的功率束来制备衬底的表面，以增加表面积和表面粗糙度。 这种制备还可以为表面提供三维特征，金刚石层可以粘附到其上并机械地锁定。 施加到制备的表面上的金刚石层的粘附性增加。

    Diamond based substrate for electronic devices
    10.
    发明授权
    Diamond based substrate for electronic devices 有权
    用于电子设备的金刚石基底

    公开(公告)号：US07842134B2

    公开(公告)日：2010-11-30

    申请号：US11909204

    申请日：2006-03-20

    申请人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    发明人： Andrew John Whitehead ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

    IPC分类号： C30B25/00

    CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0254 ,  Y10S117/915 ,  Y10T428/30

    摘要： The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.

    摘要翻译： 本发明涉及一种制造用于制造半导体层或器件的衬底的方法，包括以下步骤：提供硅晶片，其包括适于用作CVD金刚石合成的衬底的至少一个第一表面，生长CVD层 具有预定厚度的金刚石并且具有生长面到硅晶片的第一表面上，将硅晶片的厚度减小到预定水平，并且在硅晶片上提供适于进一步合成至少一个半导体的第二表面 适用于电子器件或合成第二表面本身的电子器件的层，以及适用于由紧密附着于硅表面的CVD金刚石层组成的GaN器件生长的衬底。