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1.发明授权Method for potential controlled electroplating of fine patterns on semiconductor wafers 有权在半导体晶片上精细图案的电位控制电镀方法公开(公告)号：US06551483B1
公开(公告)日：2003-04-22
申请号：US09853959
申请日：2001-05-10
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： C25D2112
CPC分类号： H01L21/2885 , C25D5/18 , C25D7/123
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。
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2.发明授权Method and apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权用于在半导体晶片上精细图案的电位控制电镀的方法和装置公开(公告)号：US07211175B1
公开(公告)日：2007-05-01
申请号：US10365577
申请日：2003-02-11
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
CPC分类号： C25D17/001 , C25D17/005 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。
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3.发明授权Apparatus for potential controlled electroplating of fine patterns on semiconductor wafers 有权用于在半导体晶片上进行精细图案的电位控制电镀的装置公开(公告)号：US06562204B1
公开(公告)日：2003-05-13
申请号：US09854230
申请日：2001-05-10
申请人： Steven T. Mayer , Jonathan Reid , Robert Contolini
发明人： Steven T. Mayer , Jonathan Reid , Robert Contolini
IPC分类号： B23H302
CPC分类号： H01L21/2885 , C25D5/18 , C25D7/123
摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.
摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。
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4.发明授权Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element 有权使用可变场成形元件对集成电路进行均匀电镀的方法和装置公开(公告)号：US06402923B1
公开(公告)日：2002-06-11
申请号：US09537467
申请日：2000-03-27
申请人： Steven T. Mayer , Richard Hill , Alain Harrus , Evan Patton , Robert Contolini , Steve Taatjes , Jon Reid
发明人： Steven T. Mayer , Richard Hill , Alain Harrus , Evan Patton , Robert Contolini , Steve Taatjes , Jon Reid
IPC分类号： C25D500
CPC分类号： C25D17/08 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/12 , Y10S204/07
摘要： An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.
摘要翻译： 电化学反应器用于集成电路的大马士革结构。 在电镀操作期间使用屏蔽来屏蔽施加的场，以补偿沿着晶片半径的电位降。 屏蔽层在电解液中建立反向电位降，以克服晶片上铜的薄膜晶种层的电阻。
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公开(公告)号：US06946065B1
公开(公告)日：2005-09-20
申请号：US09716016
申请日：2000-11-16
IPC分类号： C25D3/38 , C25D5/18 , H05K3/42 , H01L21/768
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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公开(公告)号：US09045841B1
公开(公告)日：2015-06-02
申请号：US13359343
申请日：2012-01-26
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US08048280B2
公开(公告)日：2011-11-01
申请号：US11228712
申请日：2005-09-16
IPC分类号： C25D5/18 , C25D7/12 , H01L21/768
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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公开(公告)号：US08128791B1
公开(公告)日：2012-03-06
申请号：US11590413
申请日：2006-10-30
申请人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
发明人： Bryan Buckalew , Jonathan Reid , John Sukamto , Zhian He , Seshasayee Varadarajan , Steven T. Mayer
CPC分类号： C25D21/14 , C25D17/001 , C25D17/002
摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.
摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。
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公开(公告)号：US20120279864A1
公开(公告)日：2012-11-08
申请号：US13286103
申请日：2011-10-31
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译： 描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。 阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。 还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。 还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。
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公开(公告)号：US09109295B2
公开(公告)日：2015-08-18
申请号：US12577619
申请日：2009-10-12
摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.
摘要翻译： 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。
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