公开(公告)号：US5180690A

公开(公告)日：1993-01-19

申请号：US551684

申请日：1990-07-09

申请人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

发明人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/458 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S148/122

摘要： A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

摘要翻译： 掺杂多晶半导体合金材料的低温制造方法。 该方法包括以下步骤：将半导体合金材料体暴露于至少含有掺杂剂元素的源的反应气体，并且在分解反应气体的同时建立足以溅射蚀刻所述层的表面的电势。 这允许在半导体合金材料体上沉积掺杂的非晶半导体合金材料层。 此后，非晶半导体合金材料的掺杂层暴露于足以至少部分地使所述非晶材料结晶的退火环境，并激活掺杂剂元素。

公开(公告)号：US4816082A

公开(公告)日：1989-03-28

申请号：US87264

申请日：1987-08-19

申请人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

IPC分类号： H01L31/04 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/065 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

公开(公告)号：US4696758A

公开(公告)日：1987-09-29

申请号：US897236

申请日：1986-10-06

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

公开(公告)号：US4775425A

公开(公告)日：1988-10-04

申请号：US77722

申请日：1987-07-27

申请人： Subhendu Guha ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Stanford R. Ovshinsky

IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L29/30 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S420/903

摘要： An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

公开(公告)号：US6087580A

公开(公告)日：2000-07-11

申请号：US766219

申请日：1996-12-12

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Chi-Chung Yang ,  Xunming Deng ,  Scott Jones

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Chi-Chung Yang ,  Xunming Deng ,  Scott Jones

IPC分类号： C23C16/24 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  H01L29/861 ,  H01L31/02 ,  H01L31/028 ,  H01L31/04 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

摘要翻译： 包括中等程度（IRO）硅合金材料区域的高质量非单晶硅合金材料，直到但不包括在材料内形成渗透路径所需的体积百分比。 剩余的材料是无定形的或非晶态和微晶材料的混合物。 通过CVD使用不同量的氢稀释制备材料以产生含有不同量的IRO材料的材料。 优选地，该材料包括至少8体积％的IRO材料。

公开(公告)号：US4891330A

公开(公告)日：1990-01-02

申请号：US174267

申请日：1988-03-28

申请人： Subhendu Guha ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Stanford R. Ovshinsky

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S148/045 ,  Y10S148/122

摘要： A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

摘要翻译： 一种制造掺杂的微晶半导体合金材料的方法，其包括通过辉光放电沉积工艺的带隙加宽元件，该方法通过使包含稀释气体的前体混合物经过等离子体 在不存在具有足够强度的磁场以引发电子回旋共振的辉光放电。

公开(公告)号：US4698234A

公开(公告)日：1987-10-06

申请号：US897449

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4637895A

公开(公告)日：1987-01-20

申请号：US718661

申请日：1985-04-01

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US20130037755A1

公开(公告)日：2013-02-14

申请号：US13620930

申请日：2012-09-15

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： H01B1/04

CPC分类号： H01L31/20 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3326 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/035218 ,  H01L31/03767 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

公开(公告)号：US20120040518A1

公开(公告)日：2012-02-16

申请号：US13284912

申请日：2011-10-30

申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC分类号： H01L21/20

CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.