Communication apparatus and control method for the communication apparatus
    4.
    发明授权
    Communication apparatus and control method for the communication apparatus 有权
    通信装置的通信装置和控制方法

    公开(公告)号:US07984201B2

    公开(公告)日:2011-07-19

    申请号:US11057124

    申请日:2005-02-15

    申请人: Kenji Nomura

    发明人: Kenji Nomura

    IPC分类号: G06F3/00

    CPC分类号: G06F13/385 G06F13/4081

    摘要: A communication apparatus comprises a connection notifying unit that causes a communication destination party to detect a connection; an interface unit that requires startup processing, and controls a communication with the communication destination party after the startup processing is completed; and a connection notification control unit that changes a state of the connection notifying unit to a state of causing the communication destination party to detect the connection before the startup processing of the interface unit is completed.

    摘要翻译: 通信装置包括使通信对方检测到连接的连接通知单元; 需要启动处理的接口单元,并且在启动处理完成之后控制与通信对方的通信; 以及连接通知控制单元,其在接口单元的启动处理完成之前将连接通知单元的状态改变为使通信目的地方检测到连接的状态。

    INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES
    5.
    发明申请
    INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES 有权
    集成电路利用非晶态氧化物

    公开(公告)号:US20110024741A1

    公开(公告)日:2011-02-03

    申请号:US12882404

    申请日:2010-09-15

    IPC分类号: H01L29/26

    CPC分类号: H01L29/7869

    摘要: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

    摘要翻译: 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件,其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

    Integrated circuits utilizing amorphous oxides
    7.
    发明授权
    Integrated circuits utilizing amorphous oxides 有权
    采用无定形氧化物的集成电路

    公开(公告)号:US07863611B2

    公开(公告)日:2011-01-04

    申请号:US11269646

    申请日:2005-11-09

    IPC分类号: H01L31/20

    CPC分类号: H01L29/7869

    摘要: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

    摘要翻译: 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件,其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。