摘要:
A second impurity diffusion layer is formed in a semiconductor substrate at a fixed distance from a first diffusion layer in the substrate. The diffusion layer is supplied with a program potential. An electrode is placed on the channel region between the first and second diffusion layers. Non-selected memory cells are prevented from becoming half-selected by electrically separating the first diffusion layer from the program potential according to signals from the electrode, resulting in substantial improvements in the reliability of the semiconductor device.
摘要:
An electric power steering device for a vehicle includes a plurality of assist systems electromagnetically driving an electric motor. When a first or second assist system malfunctions, a malfunction state assist amount calculation part calculates an assist amount while decreasing a limit value at the vehicle stopping, to an amount smaller than a limit value at the vehicle moving. When a malfunction such as a disconnection or a fixing of the switching elements occurs in the first or second assist systems on the basis of a judgment result of a malfunction judgment function, an assist amount switching part supplies an assist amount received from the malfunction state assist amount calculation part to first and second motor drive control parts. When a malfunction occurs in one of the first and second assist systems, one of the first and second motor drive control parts drives the motor by using the assist amount.
摘要:
A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要:
There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要:
There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译:提供了一种由通式(NaxKyLiz)NbO3(0& nlE; x≦̸ 1,0& nlE; y≦̸ 1,0& nlE; z≦̸ 0.2,x + y + z = 1)表示的碱铌酸盐类钙钛矿结构的压电膜, 其中铌酸锂具有假立方晶体,四方晶体,正交晶体,单斜晶体,菱方晶体的晶体结构,或者具有共晶的晶体结构,并且当总共K-O键合 并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100%,K-O键合比为46.5%以上,K-金属键合比为53.5%以下,其中,金属 表示包含在压电膜中的金属原子。
摘要:
A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要:
Systems and methods for controlling memory devices are disclosed. In one embodiment, a memory system comprises a memory controller for forwarding a command signal and an address signal and for receiving and forwarding a data signal, and a first memory device for receiving the command signal and the address signal from the memory controller, where the first memory device comprises a first command judging circuit for receiving and forwarding the data signal and for decoding the command signal. The memory system further comprises a second memory device for receiving the command signal and the address signal from the memory controller, where the second memory device comprises a second command judging circuit for receiving and generating the data signal and for decoding the command signal. The command signal, the address signal and the data signal are commonly connected to the first memory device and the second memory device.
摘要:
A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要:
A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要:
The ratio of the angular speed of a pinion shaft to the angular speed of a steering wheel is computed. The steering torque Tst transferred to the steering wheel is computed as a multiplication product of the ratio of angular speed and the steering torque Tm of the pinion shaft. The steering torque ΔTst transferred to the steering wheel due to actuation of a steered wheel turning angle variable device is computed as a value obtained by subtracting the steering torque Tm from the steering torque Tst. An electric power steering control device is controlled so as to generate a steering torque fluctuation-reducing assist torque corresponding to the steering torque ΔTst.