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公开(公告)号：US08923354B2
公开(公告)日：2014-12-30
申请号：US13644478
申请日：2012-10-04
发明人： Takashi Kyono , Yohei Enya , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
CPC分类号： H01S5/30 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3201 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.
摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑基底，主表面上的有源层和主表面上的p型包层区域。 主表面倾斜到垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面。 p型包层区包括各向异性应变的AlGaN层的第一p型III族氮化物半导体层和与AlGaN层不同的材料的第二p型III族氮化物半导体层。 第一p型III族氮化物半导体层设置在第二p型III族氮化物半导体层和有源层之间。 AlGaN层在p型包层区域具有最大的带隙。 第二p型III族氮化物半导体层的电阻率低于第一p型III族氮化物半导体层。
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公开(公告)号：US11421344B2
公开(公告)日：2022-08-23
申请号：US16651716
申请日：2018-02-23
发明人： Yusuke Yoshizumi , Hideki Osada , Shugo Minobe , Yoshiaki Hagi
摘要： A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 μm and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2×1017 to 4×1018 cm−3, and has an average dislocation density of 1000 to 5×107 cm−2 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.
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公开(公告)号：US09917004B2
公开(公告)日：2018-03-13
申请号：US14419315
申请日：2013-09-04
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.
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公开(公告)号：US09825134B2
公开(公告)日：2017-11-21
申请号：US15315523
申请日：2015-06-02
IPC分类号： H01L29/00 , H01L29/36 , H01L29/20 , H01L29/872 , H01L29/66 , H01L21/285 , H01L29/06
CPC分类号： H01L29/36 , H01L21/205 , H01L21/28581 , H01L29/0615 , H01L29/2003 , H01L29/66143 , H01L29/66212 , H01L29/872
摘要： A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm−3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm−3 or less.
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5.发明申请GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权III族氮化物复合基材及其制造方法，以及制造III族氮化物半导体器件的方法公开(公告)号：US20150194442A1
公开(公告)日：2015-07-09
申请号：US14419315
申请日：2013-09-04
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.
摘要翻译： 提供具有低薄层电阻并且以高产率制造的III族氮化物复合衬底及其制造方法以及使用III族氮化物复合衬底的III族氮化物半导体器件的制造方法。 III族氮化物复合衬底包括III族氮化物膜和由与III族氮化物膜不同的化学成分的材料形成的支撑衬底。 III族氮化物膜以直接方式和间接方式之一连接到支撑衬底。 III族氮化物膜的厚度为10μm以上。 III族氮化物膜侧主表面的薄层电阻为200Ω·cmgr / sq以下。
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6.发明授权Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法公开(公告)号：US08929416B2
公开(公告)日：2015-01-06
申请号：US14012364
申请日：2013-08-28
IPC分类号： H01S5/32 , H01S5/10 , B82Y20/00 , H01S5/02 , H01S5/343 , H01L33/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/34
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.
摘要翻译： 一种III族氮化物半导体激光器件，包括：激光器结构，包括支撑基底和半导体区域，所述支撑基底包括六边形III族氮化物半导体并具有半极性主表面，并且所述半导体区域设置在所述半极性主表面的半极性主表面上 支撑基地; 以及设置在所述激光器结构的半导体区域上的电极，所述半导体区域包括第一包层，第二包层和有源层。
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公开(公告)号：US11094537B2
公开(公告)日：2021-08-17
申请号：US16787700
申请日：2020-02-11
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Takuya Yanagisawa , Koji Uematsu , Yuki Seki , Yoshiyuki Yamamoto , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L21/02 , H01L21/306 , H01L21/683 , H01L21/762 , B32B7/04 , H01L29/20 , B32B7/06 , B32B7/02 , H01L33/02 , H01L33/00 , H01L33/12
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.
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8.发明授权公开(公告)号：US10158035B2
公开(公告)日：2018-12-18
申请号：US15566672
申请日：2016-04-08
IPC分类号： H01L31/18 , H01L31/0352 , H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/0216
摘要： A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 μm or more. The quantum well light-receiving layer has a carrier concentration of 1×1016 cm−3 or less.
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9.发明申请公开(公告)号：US20170207308A1
公开(公告)日：2017-07-20
申请号：US15315523
申请日：2015-06-02
IPC分类号： H01L29/36 , H01L21/285 , H01L29/66 , H01L29/20 , H01L29/872
CPC分类号： H01L29/36 , H01L21/205 , H01L21/28581 , H01L29/0615 , H01L29/2003 , H01L29/66143 , H01L29/66212 , H01L29/872
摘要： A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm−3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm−3 or less.
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10.发明授权Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same 有权III族氮化物复合衬底及其制造方法，III族氮化物复合衬底和III族氮化物半导体器件及其制造方法公开(公告)号：US09136337B2
公开(公告)日：2015-09-15
申请号：US14030009
申请日：2013-09-18
发明人： Keiji Ishibashi , Akihiro Hachigo , Yuki Hiromura , Naoki Matsumoto , Seiji Nakahata , Fumitake Nakanishi , Yusuke Yoshizumi , Hidenori Mikami
IPC分类号： H01L29/20 , H01L21/76 , H01L21/20 , H01L21/762 , H01L29/778 , H01L33/00
CPC分类号： H01L29/2003 , H01L21/2007 , H01L21/76254 , H01L29/7786 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film, to a mean value mt of the thickness thereof is 0.001 or more and 0.2 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less. Accordingly, there is provided a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality.
摘要翻译： III族氮化物复合衬底包括支撑衬底和III族氮化物膜。 III族氮化物膜的厚度的标准偏差st的比率st / mt与其厚度的平均值mt为0.001以上且0.2以下，标准偏差的比例so / mo为 III族氮化物膜的主表面和预定的平面取向的平面之间的偏角的绝对值与其偏离角的绝对值的平均值mo为0.005以上且0.6以下。 因此，提供了具有厚度大，厚度变化小，晶体质量高的III族氮化物膜的低成本，大直径III族氮化物复合衬底。
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