SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 审中-公开
    半导体发光装置和发光装置

    公开(公告)号:US20130020554A1

    公开(公告)日:2013-01-24

    申请号:US13553998

    申请日:2012-07-20

    IPC分类号: H01L27/15

    摘要: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

    摘要翻译: 提供了一种半导体发光器件和发光设备。 半导体发光器件包括:发光二极管(LED)部,其设置在透光基板的一个区域上,并且包括第一导电型半导体层,有源层和第二导电型半导体层; 以及齐纳二极管部,其设置在所述透光性基板的另一区域上,并且包括第一导电型半导体层,有源层和第二导电型半导体层。

    COMPUTER MOUSE
    4.
    发明申请
    COMPUTER MOUSE 审中-公开
    电脑鼠标

    公开(公告)号:US20120319955A1

    公开(公告)日:2012-12-20

    申请号:US13581755

    申请日:2011-05-03

    申请人: Tae Hyung Kim

    发明人: Tae Hyung Kim

    IPC分类号: G06F3/033

    CPC分类号: G06F3/03543

    摘要: A computer mouse include a sliding member having a shape of a sliding rod to be used for a long period of time. The sliding rod is accommodated in a mouse body, and the lower end of sliding rod protrudes from the bottom of the mouse body. In addition, a screwdriver, which is used for enabling the sliding rod to protrude from the bottom of the mouse body, can be stored together with the computer mouse

    摘要翻译: 计算机鼠标包括长时间使用的具有滑杆的形状的滑动构件。 滑动杆容纳在鼠标体内,滑动杆的下端从鼠标体的底部突出。 此外,用于使滑动杆从鼠标主体的底部突出的螺丝刀可以与计算机鼠标一起存储

    MASK ASSEMBLY
    8.
    发明申请
    MASK ASSEMBLY 审中-公开
    MASK组装

    公开(公告)号:US20110185966A1

    公开(公告)日:2011-08-04

    申请号:US12980511

    申请日:2010-12-29

    IPC分类号: B05C11/00

    CPC分类号: B05C11/00

    摘要: A mask assembly capable of improving organic material deposition efficiency is disclosed. The mask assembly comprises: a plurality of deposition masks; a frame coupled to the plurality of deposition masks arranged continuously; and a bonding portion for joining adjacent deposition masks.

    摘要翻译: 公开了一种能够提高有机材料沉积效率的面罩组件。 掩模组件包括:多个沉积掩模; 耦合到连续布置的多个沉积掩模的框架; 以及用于连接相邻的沉积掩模的接合部分。

    Thin Film Deposition System and Method for Depositing Thin Film
    9.
    发明申请
    Thin Film Deposition System and Method for Depositing Thin Film 审中-公开
    薄膜沉积系统和沉积薄膜的方法

    公开(公告)号:US20110143035A1

    公开(公告)日:2011-06-16

    申请号:US12961321

    申请日:2010-12-06

    IPC分类号: C23C16/448 C23C16/00

    CPC分类号: C23C16/4481

    摘要: A thin film deposition system and a method for deposit a thin film are disclosed. A thin film deposition system includes a source material feeder configured to feed source material, a source gas feeder comprising a vaporizer connected with the source material feeder to evaporate the source material fed by the source material feeder, a thin film deposition device connected with the source gas feeder to deposit the evaporated source material fed by the source gas feeder on a treatment object, vaporizer exhaustion unit having an end connected with the vaporizer to ventilate an inside of the vaporizer, and a pressure adjuster connected with the exhaustion tube to adjust the pressure of the exhaustion tube to control the velocity of source material fed to the vaporizer.

    摘要翻译: 公开了薄膜沉积系统和沉积薄膜的方法。 一种薄膜沉积系统,包括配置成进料源材料的源材料进料器,源气体进料器,其包括与源材料进料器连接的蒸发器,以蒸发由源材料进料器供料的原料;一个与该源连接的薄膜沉积装置 气体供给器,用于将由源气体供给器供给的蒸发源材料沉积在处理对象上,蒸发器排气单元具有与蒸发器连接的端部以使蒸发器的内部通风;以及压力调节器,与排气管连接以调节压力 以控制供给到蒸发器的源材料的速度。

    Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
    10.
    发明授权
    Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
    氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管

    公开(公告)号:US07859086B2

    公开(公告)日:2010-12-28

    申请号:US11723065

    申请日:2007-03-16

    IPC分类号: H01L33/00 H01L29/04 H01L29/12

    摘要: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

    摘要翻译: 氮化物半导体单晶衬底,其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面,在氮化物半导体单晶衬底中,沿着厚度方向分割上部和下部区域,所述氮化物单晶衬底的厚度至少为100μm。 这里,上部区域的掺杂浓度为下部区域的5倍以上。 优选地,上部区域中的基板的顶表面具有Ga极性。 此外,根据本发明的具体实施例,下部区域有意地未掺杂,并且上部区域是n掺杂的。 优选地,上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。