摘要:
This invention relates to a method of manufacturing non-quenched and tempered steel having an ultrafine grained pearlite structure, including hot forging a steel material so as to be high-temperature compression deformed, thus obtaining a hot forged body; rapidly cooling the hot forged body to a low-temperature pearlite transformation range, thus obtaining a supercooled hot forged body; isothermally holding the supercooled hot forged body in the low-temperature pearlite transformation range so as to be isothermally transformed; and air-cooling the hot forged body; and to non-quenched and tempered steel manufactured thereby.
摘要:
A method for operating a portable terminal so as to reduce power consumption during the support of a communication service and a portable terminal supporting the same is provided. The method includes activating a Radio Frequency (RF) communication unit, downloading a part of data of predetermined contents through the RF communication unit, buffering the downloaded part of the data in a buffer so as to output the buffered downloaded part of the data, and executing an idle time for terminating or reducing a power supply of the RF communication unit when the downloading of the part of the data of the predetermined contents is completed.
摘要:
There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.
摘要:
A computer mouse include a sliding member having a shape of a sliding rod to be used for a long period of time. The sliding rod is accommodated in a mouse body, and the lower end of sliding rod protrudes from the bottom of the mouse body. In addition, a screwdriver, which is used for enabling the sliding rod to protrude from the bottom of the mouse body, can be stored together with the computer mouse
摘要:
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
摘要:
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
摘要:
A system and method for forming an online social network using genome information, comprising a web server that creates a database of detailed information of members, including genome information of the member, as inputted from member terminals, and which generates a social network on the world wide web based on the genome information of the members.
摘要:
A mask assembly capable of improving organic material deposition efficiency is disclosed. The mask assembly comprises: a plurality of deposition masks; a frame coupled to the plurality of deposition masks arranged continuously; and a bonding portion for joining adjacent deposition masks.
摘要:
A thin film deposition system and a method for deposit a thin film are disclosed. A thin film deposition system includes a source material feeder configured to feed source material, a source gas feeder comprising a vaporizer connected with the source material feeder to evaporate the source material fed by the source material feeder, a thin film deposition device connected with the source gas feeder to deposit the evaporated source material fed by the source gas feeder on a treatment object, vaporizer exhaustion unit having an end connected with the vaporizer to ventilate an inside of the vaporizer, and a pressure adjuster connected with the exhaustion tube to adjust the pressure of the exhaustion tube to control the velocity of source material fed to the vaporizer.
摘要:
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.