公开(公告)号：US08679964B2

公开(公告)日：2014-03-25

申请号：US12173803

申请日：2008-07-15

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 金属化，例如通过在Ni（P）上施加薄层的Sn或通过在Ni（P）上施加薄的Cu层）。

公开(公告)号：US20080293243A1

公开(公告)日：2008-11-27

申请号：US12173803

申请日：2008-07-15

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 例如通过在Ni（P）上施加Sn的薄层，或者通过在Ni（P）上施加薄层的Cu，

公开(公告)号：US08691685B2

公开(公告)日：2014-04-08

申请号：US11657000

申请日：2007-01-23

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions can be achieved through a reaction-preventative or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).

摘要翻译： 在无铅互连中使用Ni（P）和富Sn焊料时，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 金属化，例如通过在Ni（P）上施加薄层的Sn或通过在Ni（P）上施加薄的Cu层）。

公开(公告)号：US07932169B2

公开(公告)日：2011-04-26

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US08314500B2

公开(公告)日：2012-11-20

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20100062597A1

公开(公告)日：2010-03-11

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/60

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US06300164B1

公开(公告)日：2001-10-09

申请号：US09559314

申请日：2000-04-27

申请人： Anson J. Call ,  Stephen Anthony DeLaurentis ,  Shaji Farooq ,  Sung Kwon Kang ,  Sampath Purushothaman ,  Kathleen Ann Stalter

发明人： Anson J. Call ,  Stephen Anthony DeLaurentis ,  Shaji Farooq ,  Sung Kwon Kang ,  Sampath Purushothaman ,  Kathleen Ann Stalter

IPC分类号： H01L2144

CPC分类号： H05K3/3436 ,  H01L23/49816 ,  H01L2924/0002 ,  H05K3/321 ,  H05K3/3447 ,  H05K3/4015 ,  H05K2201/10234 ,  H05K2201/10333 ,  H05K2201/10962 ,  Y02P70/613 ,  Y10S428/901 ,  Y10T428/12528 ,  Y10T428/24917 ,  Y10T428/256 ,  H01L2924/00

摘要： A socketable ball grid array structure is disclosed which comprises mechanically rigid (compared to solder alloys) balls coated with noble contact metals joined to the chip carrier terminals by means of a novel electrically conducting adhesive. Because of the nature of the filler that includes conducting particles with a fusible coating and the appropriate selection of the polymer resin used in the adhesive, the balls are attached to the module in a compliant and resilient manner while leaving the majority of the bottom surface of the balls pristine. The array of balls can therefore be plugged into mating sockets in a printed circuit board forming a demountable contact. This facilitates easy removal of the socketable BGA from a board for repair or upgrade purposes as well as allows ease of plugging and unplugging of these BGA's into test and burn-in boards.

摘要翻译： 公开了一种可插座的球栅阵列结构，其包括通过新颖的导电粘合剂机械地刚性（与焊料合金相比）涂覆有接合到芯片载体端子的贵金属接触金属的球。 由于包括具有可熔涂层的导电颗粒和粘合剂中使用的聚合物树脂的适当选择的填料的性质，球以顺应性和弹性方式附着到模块上，同时留下了大部分的底表面 球原始。 因此，球阵可以插入形成可拆卸接触的印刷电路板中的配合插座中。 这样便于从板上轻松取出可插拔的BGA，以进行修理或升级，同时也可以方便地将这些BGA插入测试和老化板。

公开(公告)号：US06555762B2

公开(公告)日：2003-04-29

申请号：US09345428

申请日：1999-07-01

申请人： Bernd K. Appelt ,  Jeffrey D. Gelorme ,  Sung Kwon Kang ,  Voya R. Markovich ,  Kostas Papathomas ,  Sampath Purushothaman

发明人： Bernd K. Appelt ,  Jeffrey D. Gelorme ,  Sung Kwon Kang ,  Voya R. Markovich ,  Kostas Papathomas ,  Sampath Purushothaman

IPC分类号： H05K111

CPC分类号： H01L23/49827 ,  H01B1/02 ,  H01B1/22 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K1/095 ,  H05K3/4069 ,  Y10T428/12181 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2998 ,  H01L2924/00

摘要： The present invention provides a unique, high density, electronic package having a conductive composition for filling vias or through holes to make reliable vertical or Z-connects from a dielectric layer to adjacent electrical circuits. The through holes may be plated or non-plated prior to filling. A description for making high density electronic packaging using this feature is also disclosed.

摘要翻译： 本发明提供了一种独特的，高密度的电子封装，其具有用于填充通孔或通孔的导电组合物，以使得从电介质层到相邻电路的可靠的垂直或Z-连接。 通孔可以在填充之前进行镀覆或非电镀。 还公开了使用该特征制造高密度电子封装的描述。

公开(公告)号：US06258703B1

公开(公告)日：2001-07-10

申请号：US09359061

申请日：1999-07-21

申请人： John Michael Cotte ,  Madhav Datta ,  Sung Kwon Kang

发明人： John Michael Cotte ,  Madhav Datta ,  Sung Kwon Kang

IPC分类号： H01L2144

CPC分类号： H05K3/3436 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/13116 ,  H01L2224/1357 ,  H01L2224/13616 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3452 ,  H05K2201/2081 ,  H05K2203/159 ,  H05K2203/306 ,  Y02P70/613 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/29099

摘要： An array of C4 solder bumps and a method for making is described incorporating an array of conductive areas on an electrical device, each conductive area having a layer of ball limited metalurgy at the device surface and two layers of solder having respective melting temperatures to form the C4 structure. The method includes melting the second layer of solder in the down position or towards earth to form a C4 solder ball or bump. The invention overcomes the problem of low temperature solder from wicking over the sidewall surfaces of the high melt solder of the C4 structure and attacking the edges of the underlying seed layers of the ball limited metalurgy.

摘要翻译： 描述了C4焊料凸块的阵列和制造方法，其中在电气装置上结合有导电区域的阵列，每个导电区域在器件表面具有一层球限定的金属，并且具有相应的熔化温度的两层焊料形成 C4结构。 该方法包括将第二层焊料熔化在向下的位置或者朝向地球，以形成C4焊球或凸块。 本发明克服了在C4结构的高熔点焊料的侧壁表面上芯吸的低温焊料的问题，并攻击了有限的金属冶金的下层种子层的边缘。