公开(公告)号：US20080179546A1

公开(公告)日：2008-07-31

申请号：US11834561

申请日：2007-08-06

Applicant: Do-Haing LEE ,  Sung-Wook HWANG ,  Chul-Ho SHIN

Inventor： Do-Haing LEE ,  Sung-Wook HWANG ,  Chul-Ho SHIN

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/24542

Abstract: An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Abstract translation: 离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。 栅格组件包括第一离子提取孔。 等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。 当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔 组件而不是与栅格组件孔的侧壁碰撞。 还提供了用于形成离子束的半导体制造装置和方法。

公开(公告)号：US20080054437A1

公开(公告)日：2008-03-06

申请号：US11851284

申请日：2007-09-06

Applicant: Sung-Wook HWANG

Inventor： Sung-Wook HWANG

IPC: H01L23/52 ,  H01L21/00

CPC classification number: H05K1/181 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K3/3421 ,  H05K3/3447 ,  H05K2201/10515 ,  H05K2201/10689 ,  H05K2201/10704 ,  H05K2201/10734 ,  H05K2201/10946 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A package-on-package (POP) package in which semiconductor packages are stacked using lead lines rather than conventional solder balls, and a fabricating method thereof are provided. According to the POP package and the fabricating method thereof of the present invention, the POP package is prevented from being short-circuited even when an underlying semiconductor package gets thicker and the POP package can sufficiently withstand deformation caused by post-fabrication warpage.

Abstract translation: 一种封装封装（POP）封装，其中使用引线而不是常规焊球堆叠半导体封装，并提供其制造方法。 根据本发明的POP封装及其制造方法，即使下面的半导体封装变厚并且POP封装能够充分地承受由后制造翘曲引起的变形，也可以防止POP封装短路。

公开(公告)号：US20160070838A1

公开(公告)日：2016-03-10

申请号：US14737244

申请日：2015-06-11

Applicant: Dae-Kwon KANG ,  Ji-young JUNG ,  Dong-Gyun KIM ,  Jae-Seok YANG ,  Sung-Wook HWANG

Inventor： Dae-Kwon KANG ,  Ji-young JUNG ,  Dong-Gyun KIM ,  Jae-Seok YANG ,  Sung-Wook HWANG

IPC: G06F17/50 ,  H01L21/311 ,  H01L21/768

CPC classification number: G06F17/5068 ,  G06F17/5081 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76816

Abstract: In a method of decomposing a layout of a semiconductor device, a polygon, which includes a plurality of intersections at each of which at least two lines are crossed, among polygons included in the layout of the semiconductor device may be determined as a complex polygon. A first stitch may be inserted between the plurality of intersections on the complex polygon. A plurality of decomposed patterns may be generated by performing a pattern dividing operation on the layout.

Abstract translation: 在分解半导体器件的布局的方法中，包括在半导体器件的布局中的多边形之中包括多个交点的多边形可以被确定为复数多边形。 可以在复合多边形上的多个交叉点之间插入第一针迹。 可以通过对布局进行图案划分操作来生成多个分解图案。