公开(公告)号：US5310520A

公开(公告)日：1994-05-10

申请号：US10931

申请日：1993-01-29

申请人： Sunil C. Jha ,  James A. Forster ,  Henry F. Breit

发明人： Sunil C. Jha ,  James A. Forster ,  Henry F. Breit

IPC分类号： B22F1/00 ,  B22F3/20 ,  H01L23/373 ,  B22F3/14

CPC分类号： B22F3/20 ,  B22F1/0003 ,  H01L23/3733 ,  H01L2924/0002

摘要： Discrete powder particles of copper 14 and INVAR 12 are mixed together in a container 16 and packed into a powder metal article. This article is hot vacuum degassed and vacuum sealed and then heated to temperature well below the sintering temperature of copper or INVAR. Immediately after heating the article, it is subjected to a high pressure, high strain force such as extrusion through a die thereby yielding a fully dense, strong composite material 10 with excellent combined thermal expansion and conductivity properties.

摘要翻译： 铜14和INVAR 12的分散粉末颗粒在容器16中混合在一起，并被包装成粉末金属制品。 本文采用真空真空脱气真空密封，然后加热至远低于铜或INVAR烧结温度的温度。 在加热制品之后，立即通过模具进行高压，高应变力挤出，从而产生具有优异的热膨胀和导电性能的完全致密的强复合材料10。

公开(公告)号：US5276423A

公开(公告)日：1994-01-04

申请号：US790933

申请日：1991-11-12

申请人： Henry F. Breit ,  James A. Forster

发明人： Henry F. Breit ,  James A. Forster

IPC分类号： H01C1/012 ,  H01L21/48 ,  H01L23/057 ,  H01L23/373 ,  H01L23/64

CPC分类号： H01L23/3735 ,  H01C1/012 ,  H01L21/481 ,  H01L23/057 ,  H01L23/647 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/16195

摘要： A layer of ceramic material such as alumina is plasma-deposited on a sheet member such as molybdenum or a composite laminate of molybdenum and graphite or other material of low thermal expansion to form a circuit unit substrate having a thick, adherent, electrically-insulating coating on a light, rigid and thermally-conducting base. Thick and thin film materials are deposited and fired on the insulating coating to provide conductors, insulators or resistors or the like in a circuit unit. The materials of the sheet member and of the insulating coating are selected to have matching thermal expansion coefficients so that the substrate remains flat and free of bowing during the firing of the thick and thin film materials. The plasma-deposited electrically-insulating layer is sealed to prevent moisture absorption during use.

摘要翻译： 将诸如氧化铝的陶瓷材料层等离子体沉积在诸如钼的片材构件或钼和石墨或其他低热膨胀材料的复合层压体上以形成具有厚的，粘附的电绝缘涂层的电路单元基板 在光，刚性和导热基底上。 在绝缘涂层上沉积和烧制厚薄膜材料，以在电路单元中提供导体，绝缘体或电阻器等。 选择片材和绝缘涂层的材料具有匹配的热膨胀系数，使得在厚和薄膜材料的烧制期间，基底保持平坦并且没有弯曲。 等离子体沉积的电绝缘层被密封以防止使用期间的吸湿。

公开(公告)号：US5055967A

公开(公告)日：1991-10-08

申请号：US551695

申请日：1990-07-11

申请人： Israil M. Sukonnik ,  James A. Forster ,  Henry F. Breit ,  Gary A. Raphanella

发明人： Israil M. Sukonnik ,  James A. Forster ,  Henry F. Breit ,  Gary A. Raphanella

IPC分类号： H01L21/48 ,  H01L23/14 ,  H05K1/05

CPC分类号： H01L21/4846 ,  H01L23/142 ,  H05K1/053 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2224/73265 ,  Y10S428/901

摘要： A substrate is provided for mounting semiconductor devices and comprises an electrically conductive circuit layer, a base layer of an aluminum metal material, and an electrically insulating hard coating dielectric layer of amorphous aluminum oxide which is directly adherent to the base layer for mounting the electrically conductive circuit layer thereon.

摘要翻译： 提供了一种用于安装半导体器件的衬底，其包括导电电路层，铝金属材料的基底层以及直接附着于基底层的用于安装导电的非晶形氧化铝的电绝缘硬涂层电介质层 电路层。

公开(公告)号：US4811166A

公开(公告)日：1989-03-07

申请号：US881427

申请日：1986-07-02

申请人： Juan M. Alvarez ,  Henry F. Breit ,  Steven E. Levy ,  Premkumar R. Hingorany

发明人： Juan M. Alvarez ,  Henry F. Breit ,  Steven E. Levy ,  Premkumar R. Hingorany

IPC分类号： H01L23/373 ,  H05K7/20

CPC分类号： H01L23/3735 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/13033

摘要： A heat dissipating pad or support member for mounting a semiconductor device in an electrical circuit has a metal core with a relatively low coefficient of thermal expansion preferably lower than that of the semiconductor device and has a thermally conducting, corrosion resistant metal coating with relatively greater thermal conductivity than the core. The thermally conducting coating is metallurgically bonded to top, bottom and two lateral surfaces of the core with a selected thickness to cooperate with the core in providing an outer surface portion of the member over the top of the core having an effective coefficient of thermal expansion substantially corresponding to the semiconductor device to reliably mount the semiconductor device thereon. The coating is thicker on at least one of the two lateral core surfaces so that heat collected from the semiconductor device at the top surface of the thermally conducting coating is efficiently transferrred via the lateral surface or surfaces on the core to the portion of the thermally conducting coating on the bottom surface of the member.

摘要翻译： 用于将半导体器件安装在电路中的散热垫或支撑构件具有相对低于半导体器件的热膨胀系数相对较低的金属芯，并且具有导热耐蚀金属涂层，其具有相对较大的热 电导率比核心。 导热涂层以预定的厚度冶金地结合到芯的顶部，底部和两个侧表面，以与芯部配合，以在该芯部的顶部提供该部件的外表面部分，其基本上具有有效的热膨胀系数 对应于半导体器件以在其上可靠地安装半导体器件。 涂层在两个侧芯表面中的至少一个上较厚，使得在导热涂层的顶表面处从半导体器件收集的热量有效地通过芯上的侧表面或表面传递到导热部分 涂覆在构件的底面上。

公开(公告)号：US5653379A

公开(公告)日：1997-08-05

申请号：US459440

申请日：1995-06-02

申请人： James Forster ,  Premkumar Hingorany ,  Henry F. Breit

发明人： James Forster ,  Premkumar Hingorany ,  Henry F. Breit

IPC分类号： B23K35/00 ,  C04B37/02 ,  H05K1/03 ,  H05K1/05 ,  H05K3/38 ,  B23K31/02 ,  B23K35/24

CPC分类号： B23K35/007 ,  C04B37/021 ,  C04B2237/32 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/407 ,  H05K1/0306 ,  H05K1/053 ,  H05K3/38

摘要： Ceramic to metal stock or substrates having a relatively large and thick metal core and a relatively thin ceramic layer or layers are bonded to the metal core or a selected portion thereof by providing a metal core material having a temperature coefficient of expansion which is tailored to the temperature coefficient of expansion of the ceramic layer to be bonded thereto. The typical core materials include multilayer composite metal laminates embodying Cu/Mo/Cu, Cu/Kovar/Cu, Cu/Invar/Cu and the like and including powdered metal composites embodying Cu-W, Ag-Mo, Ag-W, Al-Si, Cu/Mo/Cu, Cu/Kovar/Cu, SiC-Cu, Ni-Fe alloys having from about 20% Ni to about 80% Ni, etc. The ceramic layer is chosen primarily for the properties of dielectric strength and isolation properties and typically include such ceramics as alumina, beryllium oxide, aluminum nitride, silicon carbide, etc. Where the core composite includes copper outer surface materials or is plated to have copper outer surface materials, the core and ceramic materials and particularly multiple sections of the ceramic materials are provided in spaced relation on the metal cores of relatively large area and are preferably bonded to the core using a copper oxide eutectic formed on the core surface.

摘要翻译： 具有相对较大和较厚的金属芯和相对较薄的陶瓷层的陶瓷与金属原料或基底通过提供具有温度膨胀系数的金属芯材料结合到金属芯或其选定部分，该金属芯材料适合于 要结合的陶瓷层的温度膨胀系数。 典型的核心材料包括体现Cu / Mo / Cu，Cu / Kovar / Cu，Cu / Invar / Cu等的多层复合金属层压体，包括体现Cu-W，Ag-Mo，Ag-W，Al- Si，Cu / Mo / Cu，Cu / Kovar / Cu，具有约20％Ni至约80％Ni等的SiC-Cu，Ni-Fe合金等。陶瓷层主要用于介电强度和隔离性能 性质，并且通常包括诸如氧化铝，氧化铍，氮化铝，碳化硅等的陶瓷。其中芯复合材料包括铜外表面材料或被电镀以具有铜外表面材料，芯和陶瓷材料，特别是多个部分 在相对较大面积的金属芯上以间隔设置陶瓷材料，并且优选使用在芯表面上形成的铜氧化物共晶体将其结合到芯上。

公开(公告)号：US5362680A

公开(公告)日：1994-11-08

申请号：US931797

申请日：1992-08-18

申请人： Katherine G. Heinen ,  Brenda C. Gogue ,  Henry F. Breit

发明人： Katherine G. Heinen ,  Brenda C. Gogue ,  Henry F. Breit

IPC分类号： H01L21/52 ,  H01L21/48 ,  H01L23/04 ,  H01L23/10 ,  H01L23/373 ,  H01L23/433 ,  H01L21/60

CPC分类号： H01L24/32 ,  H01L21/4871 ,  H01L23/04 ,  H01L23/10 ,  H01L23/3731 ,  H01L23/4334 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011

摘要： Adhesion between a heat spreader (15) and a substance (19) to be adhered to the heat spreader can be enhanced by using thermal spray deposition to apply a coating (23) to the heat spreader. The substance to be adhered is applied to the coated heat spreader.

摘要翻译： 可以通过使用热喷涂沉积来将涂层（23）施加到散热器上来增强散热器（15）和要附着到散热器上的物质（19）之间的粘附。 将被粘附的物质施加到涂覆的散热器上。

公开(公告)号：US4894293A

公开(公告)日：1990-01-16

申请号：US166290

申请日：1988-03-10

申请人： Henry F. Breit ,  Karen A. Auguston ,  Joseph M. Gondusky

发明人： Henry F. Breit ,  Karen A. Auguston ,  Joseph M. Gondusky

IPC分类号： C22C9/00 ,  H01B1/02 ,  H01L23/14 ,  H01L23/373 ,  H05K1/05

CPC分类号： H01L23/142 ,  H01L23/3733 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/73265 ,  H05K1/05 ,  Y10T428/12486

摘要： A circuit system has a semiconductor device mounted on a substrate which includes a composite metal material comprising a plurality of discrete elements of ferrous metal material such as an alloy of 36 percent nickel and the balance iron having a relatively low coefficient of thermal expansion, the discrete elements being copper-coated by electroless copper plating or the like and being pressed together and heated for sintering or diffusion-bonding the copper coatings together to form a continuous copper matrix having the discrete elements secured in dispersed relation therein for providing the composite metal material with a coefficient of thermal expansion relatively much lower than that of the copper material, the heating of the coated particles for diffusion bonding thereof being regulated for forming the continuous copper matrix while leaving the copper material of the matrix substantially free of nickel, ferrous or other constituents diffused therein from the discrete elements for providing the composite material with improved thermal conductivity.

公开(公告)号：US5138114A

公开(公告)日：1992-08-11

申请号：US413346

申请日：1990-09-27

申请人： Henry F. Breit ,  Premkumar R. Hingorany ,  John A. Haug

发明人： Henry F. Breit ,  Premkumar R. Hingorany ,  John A. Haug

IPC分类号： H01L21/50 ,  H01L23/66

CPC分类号： H01L23/66 ,  H01L21/50 ,  H01L2924/0002 ,  Y10T29/49002 ,  Y10T29/49169 ,  Y10T29/49806

摘要： A method of forming enclosures for microwave and hybrid devices and the enclosure itself wherein the metals to be joined are thin (i.e., less than 40 mils thick) and/or thick (up to several inches) and wherein metallurgical hermetic bonds are provided between adjacent metals which are generally difficult to bond to each other and may be bonded by a select number of bonding processes.

摘要翻译： 一种形成用于微波和混合设备的外壳的方法以及外壳本身，其中要连接的金属薄（即，小于40密耳厚）和/或厚（至多几英寸），并且其中冶金密封件设置在相邻 通常难以彼此结合并且可以通过选择数量的结合方法结合的金属。

公开(公告)号：US4994903A

公开(公告)日：1991-02-19

申请号：US452183

申请日：1989-12-18

申请人： Thomas Wroe ,  Henry F. Breit

发明人： Thomas Wroe ,  Henry F. Breit

IPC分类号： H01L23/373 ,  H05K1/05

CPC分类号： H01L23/3737 ,  H01L23/3733 ,  H01L23/3736 ,  H05K1/056 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H05K2201/0209

摘要： A circuit having a semiconductor device therein has a novel and improved circuit substrate comprising a layer of organic electrically insulating material having a layer of metal of relatively high electrical conductivity adhered to and supported on one side of the organic material layer forming electrically conductive circuit paths and forming a pad mounting the semiconductor device. A heat sink metal layer is adhered to and supported on an opposite side of the organic material layer for withdrawing heat from the semiconductor device. A multiplicity of particles of materials of relatively higher thermal conductivity than the organic layer material is dispersed in the organic material for enhancing heat withdrawal from the semiconductor device, and the heat-sink metal layer comprises a layer of a first metal of relatively low coefficient of thermal expansion having a plurality of apertures in therethrough and a second metal of relatively much higher thermal conductivity which is disposed in the apertures and on the opposite sides of the low expansion layer and which is metallurgically bonded to the low expansion layer material. The first and second metals in the heat-sink layer provide the heat-sink layer with heat-transferring properties and with an effective coefficient of thermal expansion which cooperates with the particles enhancing heat withdrawal from the semiconductor device for conducting withdrawn heat through the heat-sink layer to be rapidly dissipated while also providing improved reliability in the mounting and interconnection of the semiconductor device and the circuit during such enhanced heat withdrawal from the circuit.

摘要翻译： 其中具有半导体器件的电路具有新颖且改进的电路基板，其包括有机电绝缘材料层，该有机电绝缘材料层具有粘附并支撑在形成导电电路路径的有机材料层的一侧上并具有相对较高导电性的金属层， 形成安装半导体器件的焊盘。 散热金属层粘附并支撑在有机材料层的相反侧，用于从半导体器件中抽取热量。 与有机层材料相比具有相对较高热导率的材料颗粒分散在有机材料中，用于增强从半导体器件取出的热量，并且散热金属层包括一层第一金属的相对较低系数 热膨胀在其中具有多个孔，以及设置在低膨胀层的孔和相对侧并且与冶金结合到低膨胀层材料上的相对高得多的导热性的第二金属。 散热层中的第一和第二金属为散热层提供具有传热性能和有效的热膨胀系数，其与颗粒配合，从而增强了从半导体器件的热量排出，以便通过热 - 吸收层被快速消散，同时在从电路的这种增强的热提取期间提供了半导体器件和电路的安装和互连的改进的可靠性。

公开(公告)号：US20080102304A1

公开(公告)日：2008-05-01

申请号：US11742607

申请日：2005-10-27

申请人： Henry F. Breit ,  Rong-Chen R. Wu ,  Prabhat Kumar

发明人： Henry F. Breit ,  Rong-Chen R. Wu ,  Prabhat Kumar

IPC分类号： B32B3/10 ,  H01L23/373

CPC分类号： H01L23/3736 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12535 ,  Y10T428/12806 ,  Y10T428/12861 ,  Y10T428/12903 ,  Y10T428/31678 ,  H01L2924/00

摘要： A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.

摘要翻译： 一种用于半导体和集成电路部件的衬底，包括：含有来自元件的周期表的VIB族金属和/或各向异性材料的芯板，具有第一主表面和第二主表面，以及多个开口， 最少部分地从第一主表面到第二主表面; 和来自元件周期表的IB族金属或其它高导​​热材料填充由至少一些开口包围的空间的至少一部分; 以及可选地，包含来自周期表的IB族金属或设置在第一主表面的至少一部分和第二主表面的至少一部分上的其它高导热材料的层。