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15 条记录 (耗时 0.024 秒)

    Circuit system, a composite material for use therein, and a method of making the material
    2.
    发明授权
    Circuit system, a composite material for use therein, and a method of making the material 失效
    电路系统，其中使用的复合材料以及制造该材料的方法

    公开(公告)号：US5310520A

    公开(公告)日：1994-05-10

    申请号：US10931

    申请日：1993-01-29

    申请人： Sunil C. Jha ,  James A. Forster ,  Henry F. Breit

    发明人： Sunil C. Jha ,  James A. Forster ,  Henry F. Breit

    IPC分类号： B22F1/00 ,  B22F3/20 ,  H01L23/373 ,  B22F3/14

    CPC分类号： B22F3/20 ,  B22F1/0003 ,  H01L23/3733 ,  H01L2924/0002

    摘要： Discrete powder particles of copper 14 and INVAR 12 are mixed together in a container 16 and packed into a powder metal article. This article is hot vacuum degassed and vacuum sealed and then heated to temperature well below the sintering temperature of copper or INVAR. Immediately after heating the article, it is subjected to a high pressure, high strain force such as extrusion through a die thereby yielding a fully dense, strong composite material 10 with excellent combined thermal expansion and conductivity properties.

    摘要翻译： 铜14和INVAR 12的分散粉末颗粒在容器16中混合在一起，并被包装成粉末金属制品。 本文采用真空真空脱气真空密封，然后加热至远低于铜或INVAR烧结温度的温度。 在加热制品之后，立即通过模具进行高压，高应变力挤出，从而产生具有优异的热膨胀和导电性能的完全致密的强复合材料10。

    Circuit units, substrates therefor and method of making
    3.
    发明授权
    Circuit units, substrates therefor and method of making 失效
    电路单元，基板及其制造方法

    公开(公告)号：US5276423A

    公开(公告)日：1994-01-04

    申请号：US790933

    申请日：1991-11-12

    申请人： Henry F. Breit ,  James A. Forster

    发明人： Henry F. Breit ,  James A. Forster

    IPC分类号： H01C1/012 ,  H01L21/48 ,  H01L23/057 ,  H01L23/373 ,  H01L23/64

    CPC分类号： H01L23/3735 ,  H01C1/012 ,  H01L21/481 ,  H01L23/057 ,  H01L23/647 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/16195

    摘要： A layer of ceramic material such as alumina is plasma-deposited on a sheet member such as molybdenum or a composite laminate of molybdenum and graphite or other material of low thermal expansion to form a circuit unit substrate having a thick, adherent, electrically-insulating coating on a light, rigid and thermally-conducting base. Thick and thin film materials are deposited and fired on the insulating coating to provide conductors, insulators or resistors or the like in a circuit unit. The materials of the sheet member and of the insulating coating are selected to have matching thermal expansion coefficients so that the substrate remains flat and free of bowing during the firing of the thick and thin film materials. The plasma-deposited electrically-insulating layer is sealed to prevent moisture absorption during use.

    摘要翻译： 将诸如氧化铝的陶瓷材料层等离子体沉积在诸如钼的片材构件或钼和石墨或其他低热膨胀材料的复合层压体上以形成具有厚的，粘附的电绝缘涂层的电路单元基板 在光，刚性和导热基底上。 在绝缘涂层上沉积和烧制厚薄膜材料，以在电路单元中提供导体，绝缘体或电阻器等。 选择片材和绝缘涂层的材料具有匹配的热膨胀系数，使得在厚和薄膜材料的烧制期间，基底保持平坦并且没有弯曲。 等离子体沉积的电绝缘层被密封以防止使用期间的吸湿。

    Socket apparatus particularly adapted for land grid array type semiconductor devices
    4.
    发明授权
    Socket apparatus particularly adapted for land grid array type semiconductor devices 失效
    插座设备特别适用于陆地阵列型半导体器件

    公开(公告)号：US06547580B1

    公开(公告)日：2003-04-15

    申请号：US09961658

    申请日：2001-09-24

    申请人： Scott A. Leavitt ,  Andrew K. Houbre ,  James A. Forster

    发明人： Scott A. Leavitt ,  Andrew K. Houbre ,  James A. Forster

    IPC分类号： H01R1122

    CPC分类号： H01R12/88 ,  H01R12/716

    摘要： A socket (10) has a cover (14) pivotably mounted to a base (12). The base is formed with a seat (12a) for mounting a semiconductor device on a contact mounting plate (18). A locking mechanism (20) for locking the cover in the closed position includes an over center linkage mechanism interacting with a locking pin (20a). In a modified embodiment, the locking mechanism is provided with a pivotable locking member (27) to provide either manual or automated operation. The cover (14) of socket (10) also comprises an integrally formed heat sink. In another embodiment (10′), a separate heat sink (30) is independently mounted on the cover (28) provided with an aperture through the cover in which the heat sink is slidably mounted.

    摘要翻译： 插座（10）具有可枢转地安装到基座（12）的盖（14）。 基座形成有用于将半导体器件安装在触点安装板（18）上的座（12a）。 用于将盖锁定在关闭位置的锁定机构（20）包括与锁定销（20a）相互作用的过中心连杆机构。 在改进的实施例中，锁定机构设置有可枢转的锁定构件（27）以提供手动或自动操作。 插座（10）的盖（14）还包括整体形成的散热器。 在另一个实施例（10'）中，单独的散热器（30）独立地安装在盖子（28）上，盖子（28）设置有通过盖的孔，散热器可滑动地安装在该盖中。

    Socket apparatus particularly adapted for LGA type semiconductor devices
    8.
    发明授权
    Socket apparatus particularly adapted for LGA type semiconductor devices 失效
    插座设备特别适用于LGA型半导体器件

    公开(公告)号：US06570398B2

    公开(公告)日：2003-05-27

    申请号：US09961659

    申请日：2001-09-24

    申请人： Raymond F. Murphy ,  Scott A. Leavitt ,  James A. Forster

    发明人： Raymond F. Murphy ,  Scott A. Leavitt ,  James A. Forster

    IPC分类号： G01R3126

    CPC分类号： G01R1/0458 ,  G01R1/0466

    摘要： A socket (10) has a cover (14) pivotably mounted to a base (12). The base is formed with a seat (12a) for mounting a semiconductor device on a contact mounting plate (18). A locking mechanism (20) for locking the cover in the closed position includes an over center linkage mechanism interacting with a locking pin (20a). In a modified embodiment, the locking mechanism is provided with a pivotable locking member (27) to provide either manual or automated operation. The cover (14) of socket (10) also comprises an integrally formed heat sink. In another embodiment (10′), a separate heat sink (30) is independently mounted on the cover (28) provided with an aperture through the cover in which the heat sink is slidably mounted.

    摘要翻译： 插座（10）具有可枢转地安装到基座（12）的盖（14）。 基座形成有用于将半导体器件安装在触点安装板（18）上的座（12a）。 用于将盖锁定在关闭位置的锁定机构（20）包括与锁定销（20a）相互作用的过中心连杆机构。 在改进的实施例中，锁定机构设置有可枢转的锁定构件（27）以提供手动或自动操作。 插座（10）的盖（14）还包括一体形成的散热器。 在另一个实施例（10'）中，单独的散热器（30）独立地安装在盖子（28）上，盖子（28）设置有穿过盖的孔，散热器可滑动地安装在该盖中。

    Heat exchanger assemblies-material for use therin, and a method of making the material
    10.
    发明授权
    Heat exchanger assemblies-material for use therin, and a method of making the material 失效
    热交换器组件 - 用于使用的材料，以及制造材料的方法

    公开(公告)号：US5553770A

    公开(公告)日：1996-09-10

    申请号：US207456

    申请日：1994-03-07

    申请人： Sunil C. Jha ,  James A. Forster

    发明人： Sunil C. Jha ,  James A. Forster

    IPC分类号： B23K20/04 ,  B23K35/02 ,  B23K35/14 ,  B23K35/22 ,  B23K35/30 ,  B23K35/40 ,  C22C19/00 ,  F28F19/06 ,  B21D53/04

    CPC分类号： B23K35/0238 ,  B23K35/3033 ,  F28F19/06 ,  B23K35/304

    摘要： A self-brazing material 10 for use in a heat exchanger 50 using a corrosive heat exchanger fluid is manufactured by providing a first substrate layer 10 and a second layer 12 metallurgically bonding the two layers together to form a composite material 22. This second layer 12 is made of a material chosen from a group consisting of materials capable of having good high temperature and corrosive properties, and melting at a temperature well below that of the first material 10. The bonded material 22 is then reacted so as to render the second layer 12 a brazing layer for the first substitute layer 10 with excellent high temperature and corrosive properties.

    摘要翻译： 使用腐蚀性换热器流体的热交换器50中使用的自钎焊材料10通过提供第一基底层10和第二层12制造，第一基底层10和第二层12将两层冶金结合在一起以形成复合材料22.该第二层12 由选自能够具有良好的高温和腐蚀性能的材料组成的材料制成，并在远低于第一材料10的温度下熔化。接合材料22然后反应以使第二层 12是具有优异的高温和腐蚀性能的第一替代层10的钎焊层。