公开(公告)号：US20210057229A1

公开(公告)日：2021-02-25

申请号：US16997199

申请日：2020-08-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro OHORI ,  Taiki MIURA ,  Masahiro OGASAWARA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32

Abstract: There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.

公开(公告)号：US20160322230A1

公开(公告)日：2016-11-03

申请号：US15133314

申请日：2016-04-20

Applicant: Tokyo Electron Limited

Inventor： Gaku SHIMODA ,  Hotaka MARUYAMA ,  Takanori SATO ,  Masafumi URAKAWA ,  Masahiro OGASAWARA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/334 ,  H01J2237/3345 ,  H01J2237/3348 ,  H01L21/67109

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

Abstract translation: 用于蚀刻形成在基板上的硅膜的方法包括将HBr气体，NF 3气体和O 2气体供应到室中，并且利用所提供的HBr气体，NF3气体产生的等离子体对硅膜进行多次蚀刻处理， O2气体，在多次蚀刻工序中逐渐降低HBr气体的流量，根据HBr气体的还原来调节O 2气体的流量。

公开(公告)号：US20210305023A1

公开(公告)日：2021-09-30

申请号：US17195787

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Masahiro OGASAWARA ,  Hidetoshi HANAOKA ,  Masashi IKEGAMI ,  Naoyuki SATOH ,  Toshiya TSUKAHARA

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/311

Abstract: An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.

公开(公告)号：US20200066496A1

公开(公告)日：2020-02-27

申请号：US16545185

申请日：2019-08-20

Applicant: Tokyo Electron Limited

Inventor： Shingo KITAMURA ,  Koichi KAZAMA ,  Masahiro OGASAWARA ,  Susumu NOGAMI ,  Tetsuji SATO

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/3213

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

公开(公告)号：US20150056808A1

公开(公告)日：2015-02-26

申请号：US14462658

申请日：2014-08-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro OGASAWARA ,  Masafumi URAKAWA ,  Yoshinobu HAYAKAWA ,  Kazuhiro KUBOTA ,  Hikaru WATANABE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31144 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/76802

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract translation: 提供了蚀刻氧化硅膜的方法。 该方法包括将包括氧化硅膜的工件和形成在氧化硅膜上的掩模暴露于处理气体的等离子体以蚀刻氧化硅膜。 掩模包括形成在氧化硅膜上的第一膜和形成在第一膜上的第二膜，并且第二膜由相对于等离子体中的活性种类具有比第一膜低的蚀刻速率的膜构成 。

公开(公告)号：US20160336197A1

公开(公告)日：2016-11-17

申请号：US15149501

申请日：2016-05-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Fumiya KOBAYASHI ,  Masahiro OGASAWARA

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  C23F4/00 ,  H01L21/32137

Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.

Abstract translation: 根据实施例的方法包括（i）在等离子体处理装置的处理容器中制备工件的步骤，（ii）在第一等离子体处理步骤中产生含有氯的第一处理气体的等离子体 处理容器，（iii）在处理容器中产生含有氟的第二处理气体的等离子体的第二等离子体处理工序，（iv）产生第三处理气体的等离子体的第三等离子体处理工序， 在处理容器中含有氧气。 执行多个序列，每个序列包括第一等离子体处理步骤，第二等离子体处理步骤和第三等离子体处理步骤。

公开(公告)号：US20150132967A1

公开(公告)日：2015-05-14

申请号：US14529241

申请日：2014-10-31

Applicant: Tokyo Electron Limited

Inventor： Masafumi URAKAWA ,  Rui TAKAHASHI ,  Masahiro OGASAWARA

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract translation: 一种使用具有静电卡盘的基板处理装置的基板处理装置的方法，所述基板处理装置包括绝缘构件，所述绝缘构件包括电极并且向安装在所述静电卡盘上的基板提供等离子体处理，所述第一工序提供具有 使用具有第一气体压力的处理气体的等离子体消除基板中的电荷的第二气体压力到基板的背面。