公开(公告)号：US20140220260A1

公开(公告)日：2014-08-07

申请号：US14171928

申请日：2014-02-04

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： C23C16/50

CPC分类号： C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733

摘要： A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

摘要翻译： 用于在真空室内进行等离子体处理的基板处理装置包括转盘，其包括基板安装部，用于沿着真空室的周向形成的基板，以对其进行轨道旋转; 等离子体产生气体供应部分，其将等离子体产生气体供应到等离子体产生区域中; 向所述等离子体发生气体供给能量以将所述等离子体产生气体变更为等离子体的能量供给部; 偏置电极，设置在转台的下侧以面对等离子体产生区域，并将等离子体中的离子引导到晶片的表面上; 以及将真空室抽出的排气口，其中偏置电极从转台的旋转中心延伸到外缘侧，偏置电极的旋转方向的宽度小于相邻的基板安装部之间的距离。

公开(公告)号：US09583312B2

公开(公告)日：2017-02-28

申请号：US14100224

申请日：2013-12-09

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Yohei Yamazawa ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

摘要： A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

摘要翻译： 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，其被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。

公开(公告)号：US09167680B2

公开(公告)日：2015-10-20

申请号：US14011860

申请日：2013-08-28

申请人： TOKYO ELECTRON LIMITED

发明人： Yohei Yamazawa ,  Takafumi Kimura ,  Chishio Koshimizu

IPC分类号： H01Q1/26 ,  H01J7/24 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H05H2001/4667

摘要： A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

摘要翻译： 一种等离子体处理装置，包括：安装台，设置在处理室中，构造成安装在其上; 电感耦合天线，其设置在与所述安装台相对的所述处理室的外部，所述感应耦合天线连接到高频电源; 以及形成处理室的壁的窗构件，其面对电感耦合天线。 窗构件包括由导电材料制成的多个导电窗，以及设置在导电窗之间的电介质部分。 电感耦合天线在窗构件上沿预定方向延伸并电连接到导电窗中的一个，并且通过导体的电连接从一个导电窗口顺序地执行到与其它导电窗口相同的方向 电感耦合天线的延伸方向。

公开(公告)号：US20140170859A1

公开(公告)日：2014-06-19

申请号：US14100224

申请日：2013-12-09

申请人： Tokyo Electron Limited

发明人： Jun YAMAWAKU ,  Chishio Koshimizu ,  Yohei Yamazawa ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

摘要： A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

摘要翻译： 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，其被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。

公开(公告)号：US09111747B2

公开(公告)日：2015-08-18

申请号：US13916847

申请日：2013-06-13

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509 ,  H01L21/687

CPC分类号： H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

摘要： A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

摘要翻译： 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。