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公开(公告)号：US20170092513A1
公开(公告)日：2017-03-30
申请号：US15312225
申请日：2015-06-05
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA
IPC分类号： H01L21/67 , H01L21/311 , H01J37/32 , H01L21/02
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32633 , H01J37/32715 , H01J37/32834 , H01J2237/334 , H01L21/02274 , H01L21/31116 , H01L21/6719
摘要： A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20210320009A1
公开(公告)日：2021-10-14
申请号：US17357006
申请日：2021-06-24
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC分类号： H01L21/3065 , H05H1/46 , H01J37/32
摘要： A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
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公开(公告)号：US20220270851A1
公开(公告)日：2022-08-25
申请号：US17675228
申请日：2022-02-18
摘要： There is provided an antenna for inductively coupled plasma excitation. The antenna comprises a plurality of coil assemblies and a conductive plate connected to the plurality of coil assemblies, the conductive plate having a central opening and at least one plate terminal.
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公开(公告)号：US20200266034A1
公开(公告)日：2020-08-20
申请号：US16868849
申请日：2020-05-07
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC分类号： H01J37/32 , C23C16/50 , C23C16/455 , C23C16/44
摘要： A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
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公开(公告)号：US20190098740A1
公开(公告)日：2019-03-28
申请号：US16144714
申请日：2018-09-27
发明人： Yohei YAMAZAWA , Takehisa SAITO , Mayo UDA , Keigo TOYODA , Alok RANJAN , Toshiki NAKAJIMA
IPC分类号： H05H1/46 , H05H1/24 , H01J37/305 , H01J37/32 , H01L21/67
摘要： A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号：US20160260582A1
公开(公告)日：2016-09-08
申请号：US15055783
申请日：2016-02-29
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/50
CPC分类号： H01J37/3244 , C23C16/4412 , C23C16/455 , C23C16/50 , H01J37/32009 , H01J37/32091 , H01J37/32633 , H01J37/32834
摘要： A baffle structure of a plasma processing apparatus includes a first member and at least one second member. The first member includes a cylindrical portion extending between a placement table and a processing container. A plurality of vertically elongated through holes are formed in the cylindrical portion to be arranged in the circumferential direction. The at least one second member is disposed in the outside of the cylindrical portion of the first member in the radial direction. The at least one second member is arranged to form a cylindrical body having an inner diameter larger than the outer diameter of the cylindrical portion. The vertical positions of a plurality of second members may be individually changed. Or, the horizontal position of a single second member may be changed. Or, the single second member may be made to be inclined.
摘要翻译： 等离子体处理装置的挡板结构包括第一构件和至少一个第二构件。 第一构件包括在放置台和处理容器之间延伸的圆柱形部分。 在圆筒形部分上形成多个垂直细长的通孔，沿圆周方向布置。 所述至少一个第二构件在径向方向上设置在所述第一构件的圆柱形部分的外侧。 至少一个第二构件被布置成形成具有大于圆柱形部分的外径的内径的圆柱体。 多个第二构件的垂直位置可以单独改变。 或者，可以改变单个第二构件的水平位置。 或者，可以使单个第二构件倾斜。
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公开(公告)号：US20240049379A1
公开(公告)日：2024-02-08
申请号：US18382062
申请日：2023-10-20
发明人： Yohei YAMAZAWA , Takehisa SAITO , Mayo UDA , Keigo TOYODA , Alok RANJAN , Toshiki NAKAJIMA
CPC分类号： H05H1/46 , H01J37/32495 , H01L21/67069 , H01J37/3211 , H01J37/3244 , H05H1/4652
摘要： A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号：US20210375597A1
公开(公告)日：2021-12-02
申请号：US17402398
申请日：2021-08-13
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA
IPC分类号： H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
摘要： A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20190131136A1
公开(公告)日：2019-05-02
申请号：US16061434
申请日：2016-12-02
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA
IPC分类号： H01L21/3065 , H01J37/32 , H05H1/46
摘要： A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
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公开(公告)号：US20170301568A1
公开(公告)日：2017-10-19
申请号：US15484389
申请日：2017-04-11
发明人： Yuki HOSAKA , Yoshihiro UMEZAWA , Toshiki NAKAJIMA , Mayo UDA , Kenichi SHIMONO
CPC分类号： H01L21/67069 , F16K5/0442 , F16K31/086 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J2237/334
摘要： The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
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