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Patent Agency Ranking
公开(公告)号：US20140235001A1
公开(公告)日：2014-08-21
申请号：US14267964
申请日：2014-05-02
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
IPC: H01L33/60
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
Abstract translation: 描述了用于制造发光装置的系统和方法。 优选实施例包括形成在基板上的多个LED。 每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。 反射表面优选地位于比各个LED的有源层更低的位置。
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公开(公告)号：US09214613B2
公开(公告)日：2015-12-15
申请号：US14267964
申请日：2014-05-02
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
Abstract translation: 描述了用于制造发光装置的系统和方法。 优选实施例包括形成在基板上的多个LED。 每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。 反射表面优选地位于比各个LED的有源层更低的位置。
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公开(公告)号：US09130115B2
公开(公告)日：2015-09-08
申请号：US14187438
申请日：2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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公开(公告)号：US20140166979A1
公开(公告)日：2014-06-19
申请号：US14187438
申请日：2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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公开(公告)号：US20150147834A1
公开(公告)日：2015-05-28
申请号：US14608306
申请日：2015-01-29
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/486 , H01L21/6835 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/97 , H01L33/005 , H01L33/0054 , H01L33/486 , H01L33/62 , H01L33/641 , H01L33/644 , H01L33/647 , H01L2221/68345 , H01L2221/68359 , H01L2224/16 , H01L2224/32225 , H01L2224/32506 , H01L2224/48091 , H01L2224/48227 , H01L2224/48233 , H01L2224/49113 , H01L2224/73265 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3512 , H01L2933/0066 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.
Abstract translation: 具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。 流程非常简单，成本效益高。 所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。 通过组合单独的结构，产生具有高散热能力的低电阻电连接。 此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。 通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。 此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。 通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。
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