Circuit Board And Manufacturing Method Thereof
    1.
    发明申请
    Circuit Board And Manufacturing Method Thereof 审中-公开
    电路板及其制造方法

    公开(公告)号:US20080029476A1

    公开(公告)日:2008-02-07

    申请号:US10594599

    申请日:2005-02-24

    IPC分类号: H01B13/00

    摘要: A circuit board having high adhessiveness contact between electrically insulating layers and having a low interlayer electric resistance is provided. A circuit board is provided with a first conductive layer formed on a core (1) and a first electrically insulating layer formed thereon. In the circuit board, a first conductor layer has a surface roughness Ra of 0.1 nm or more but less than 100 nm, and a first primer layer having a thiol compound as a main material is provided between the first conductive layer and the first electrically insulating layer. Thus, the circuit board which has excellent adhesiveness between the first conductor layer and the first electrically insulating layer and is also applicable to high frequency signal is provided.

    摘要翻译: 提供一种电绝缘层之间具有高粘合性接触并具有低层间电阻的电路板。 电路板设置有形成在芯部(1)上的第一导电层和形成在其上的第一电绝缘层。 在电路板中,第一导体层的表面粗糙度Ra为0.1nm以上且小于100nm,在第一导电层和第一电绝缘层之间设置具有硫醇化合物作为主要材料的第一底漆层 层。 因此,提供了在第一导体层和第一电绝缘层之间具有优异的粘合性并且也适用于高频信号的电路板。

    Apparatus for Producing Electronic Device Such as Display Device, Method of Producing Electronic Device Such as Display Device, and Electronic Device Such as Display Device
    3.
    发明申请
    Apparatus for Producing Electronic Device Such as Display Device, Method of Producing Electronic Device Such as Display Device, and Electronic Device Such as Display Device 审中-公开
    用于制造诸如显示装置的电子装置的装置,诸如显示装置的电子装置的制造方法以及诸如显示装置的电子装置

    公开(公告)号:US20080315201A1

    公开(公告)日:2008-12-25

    申请号:US11992046

    申请日:2005-09-16

    摘要: An object of the present invention is to reduce an adverse effect of an atmosphere in a heat treatment device used in production of an electronic device, imparted on characteristics of the produced electronic device. To attain the object, an inner surface of the heat treatment device is covered with an oxide passive-state film and bringing the surface roughness of the inner surface to 1 μm or less in terms of a central mean roughness Ra. According to this type of heat treatment device, in curing a heat curable resin, deterioration in the heat curable resin caused by decomposition or dissociation of the heat curable resin, can be reduced.

    摘要翻译: 本发明的一个目的是减少赋予所生产的电子设备的特性的用于生产电子设备的热处理装置中的气氛的不良影响。 为了实现该目的,热处理装置的内表面被氧化物被动状态膜覆盖,并且以中心平均粗糙度Ra为基准使内表面的表面粗糙度为1μm以下。 根据这种类型的热处理装置,在固化热固性树脂时,可以降低由热固性树脂的分解或解离引起的热固性树脂的劣化。

    Substrate and process for producing the same
    4.
    发明申请
    Substrate and process for producing the same 审中-公开
    基材及其制造方法

    公开(公告)号:US20070024800A1

    公开(公告)日:2007-02-01

    申请号:US10558934

    申请日:2004-06-01

    IPC分类号: G02F1/1333

    摘要: A photosensitive transparent resin film, provided selectively with a groove reaching a transparent substrate is formed on the transparent substrate, and a wiring portion is provided in the groove substantially in flush with the photosensitive transparent resin film. The wiring portion can be formed quickly while controlling the thickness easily by preprocessing the surface of the photosensitive transparent resin film or the bottom face of the groove before the wiring portion is set in the groove.

    摘要翻译: 选择性地设置到达透明基板的槽的光敏透明树脂膜形成在透明基板上,并且布线部分设置在基本上与感光透明树脂膜齐平的槽中。 在将布线部分设置在槽中之前,可以通过预处理感光性透明树脂膜的表面或槽的底面来容易地控制厚度,同时可以快速形成布线部分。

    Gas production facility, gas supply container, and gas for manufacture of electronic devices
    7.
    发明申请
    Gas production facility, gas supply container, and gas for manufacture of electronic devices 审中-公开
    天然气生产设备,气体供应容器和用于制造电子设备的气体

    公开(公告)号:US20110124928A1

    公开(公告)日:2011-05-26

    申请号:US12929271

    申请日:2011-01-12

    CPC分类号: C23C30/00 C23C4/11 C23C8/02

    摘要: An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 μm or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.

    摘要翻译: 使用反应性高的原料气体,特别是氟化烃或用于供给气体的容器来制造气体的装置,其特征在于,与气体接触的部分的表面的平均粗糙度为1μm 或更小的中心线平均粗糙度Ra。 优选在具有如上控制的粗糙度的表面上形成氧化物基钝化膜,例如基于氧化铬,氧化铝,氧化钇,氧化镁等的膜。 上述设备和容器可适用于防止源自气体生产设备或用于供应气体的容器的原料气体的污染。

    Gas Production Facility, Gas Supply Container, And Gas For Manufacture Of Electronic Devices
    8.
    发明申请
    Gas Production Facility, Gas Supply Container, And Gas For Manufacture Of Electronic Devices 审中-公开
    气体生产设备,气体供应集装箱和气体制造电子设备

    公开(公告)号:US20070282142A1

    公开(公告)日:2007-12-06

    申请号:US10592278

    申请日:2005-02-16

    IPC分类号: C07C19/08 A61L9/00

    CPC分类号: C23C30/00 C23C4/11 C23C8/02

    摘要: An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 μm or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.

    摘要翻译: 使用高反应性的原料气体,特别是氟化烃或用于供给气体的容器来生产气体的装置,其特征在于,与气体接触的部分的表面的平均粗糙度为1μm 或更小的中心线平均粗糙度Ra。 优选在具有如上控制的粗糙度的表面上形成氧化物基钝化膜,例如基于氧化铬,氧化铝,氧化钇,氧化镁等的膜。 上述设备和容器可适用于防止源自气体生产设备或用于供应气体的容器的原料气体的污染。

    Vacuum thermal insulating valve
    10.
    发明授权
    Vacuum thermal insulating valve 失效
    真空保温阀

    公开(公告)号:US07673649B2

    公开(公告)日:2010-03-09

    申请号:US10597303

    申请日:2005-01-13

    IPC分类号: B65D81/20

    摘要: The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.

    摘要翻译: 本发明提供一种真空绝热阀,其可以在气体供给系统或排气系统中在高温下使用,并且由于其绝热性能优异,也可以制成大小小型的真空绝热阀。 使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱,上述真空保温箱S由方形的下部真空夹套S5形成, 圆筒形真空绝热管接收部分J的侧面并且其上表面打开,方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。