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    Micro power switch using a cold cathode and a driving method thereof
    2.
    发明授权
    Micro power switch using a cold cathode and a driving method thereof 失效
    使用冷阴极的微功率开关及其驱动方法

    公开(公告)号：US6057636A

    公开(公告)日：2000-05-02

    申请号：US931417

    申请日：1997-09-16

    申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

    发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

    IPC分类号： H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H03K17/54 ,  H01J1/46 ,  H01J1/02 ,  H01J1/05

    CPC分类号： H01J21/105 ,  H03K17/545

    摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

    摘要翻译： 本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为 由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

    Electron emitting device and switching circuit using the same
    3.
    发明授权
    Electron emitting device and switching circuit using the same 失效
    电子发射器件和使用其的开关电路

    公开(公告)号：US06323831B1

    公开(公告)日：2001-11-27

    申请号：US09153086

    申请日：1998-09-15

    申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Kazuya Nakayama

    发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Kazuya Nakayama

    IPC分类号： G09G322

    CPC分类号： H01J3/022 ,  H01J7/44 ,  H01J19/78

    摘要： An electron emitting comprising an emitter electrode for emitting electrons when applied with an electric field, a gate electrode for extracting the electrons emitted from the emitter electrode, when applied with a voltage from a signal source, the voltage being positive with respect to the emitter electrode, an anode electrode connected to a load, for collecting the electrons extracted by the gate electrode, and for passing an anode current, and a gate resistor connected between the signal source and the gate electrode, for reducing a gate current flowing in the gate electrode, without changing an anode current flowing in the anode, and for lowering a gate voltage by utilizing a voltage drop cause by the gate current.

    摘要翻译： 一种电子发射器，包括用于在施加电场时发射电子的发射极电极，用于从发射极发射的电子提取的栅电极，当施加来自信号源的电压时，该电压相对于发射电极为正 连接到负载的阳极，用于收集由栅电极提取的电子和用于通过阳极电流，以及连接在信号源和栅电极之间的栅极电阻，用于减少在栅电极中流动的栅极电流 ，而不改变在阳极中流动的阳极电流，并且通过利用由栅极电流引起的电压降降低栅极电压。

    Cold-cathode power switching device of field-emission type
    4.
    发明授权
    Cold-cathode power switching device of field-emission type 失效
    场致发射型冷阴极功率开关器件

    公开(公告)号：US06297586B1

    公开(公告)日：2001-10-02

    申请号：US09263217

    申请日：1999-03-05

    申请人： Kazuya Nakayama ,  Tadashi Sakai ,  Naoshi Sakuma ,  Tomio Ono

    发明人： Kazuya Nakayama ,  Tadashi Sakai ,  Naoshi Sakuma ,  Tomio Ono

    IPC分类号： H01J116

    CPC分类号： H01J21/105 ,  H01J1/3044

    摘要： Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.

    摘要翻译： 本文公开了一种冷阴极电力开关装置及其制造方法。 该器件具有高耐压性，并且可以以高产率制造，尽管其元件面积大以控制大电流。 在该方法中，制备微型发射体的阵列，并且发射极阵列粘附到具有沟槽的导电衬底上。 沿着沟槽切割导电衬底，形成多个衬底。 这些基板之间的间隙用绝缘树脂填充。 结果，以高产率制造用于控制大电流的多模块功率开关装置。 此外，在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块，在阴极上形成绝缘条，在绝缘条上形成栅极线，栅极连接到 门线。 可以一次控制从模块发射的电子。 每个模块可以具有连接到阴极线的阴极焊盘。 在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制，从而在每个发射极和阳极电极之间提供足够的绝缘距离。 因此，可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

    Insulated-gate thyristor
    8.
    发明授权
    Insulated-gate thyristor 失效
    绝缘栅晶闸管

    公开(公告)号：US06236069B1

    公开(公告)日：2001-05-22

    申请号：US09102360

    申请日：1998-06-23

    申请人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

    发明人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

    IPC分类号： H01L2974

    CPC分类号： H01L29/7455 ,  H01L29/42308 ,  H01L29/749

    摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

    摘要翻译： 本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面 形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽 距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

    Insulated-gate thyristor
    9.
    发明授权
    Insulated-gate thyristor 失效
    绝缘栅晶闸管

    公开(公告)号：US5464994A

    公开(公告)日：1995-11-07

    申请号：US291754

    申请日：1994-08-16

    申请人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

    发明人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

    IPC分类号： H01L29/423 ,  H01L29/745 ,  H01L29/749 ,  H01L29/74

    CPC分类号： H01L29/7455 ,  H01L29/42308 ,  H01L29/749

    摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

    摘要翻译： 本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面 形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽 距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

    Colored zinc coating
    10.
    发明授权
    Colored zinc coating 失效
    有色锌涂层

    公开(公告)号：US5022937A

    公开(公告)日：1991-06-11

    申请号：US116613

    申请日：1987-11-03

    申请人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

    发明人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

    IPC分类号： C23C2/06 ,  C23C2/08 ,  C23C2/26 ,  C23C2/28 ,  C23C4/08 ,  C23C28/00

    CPC分类号： C23C4/08 ,  C23C2/06 ,  C23C2/08 ,  C23C2/26 ,  C23C2/28

    摘要： This invention permits, in a colored galvanized coating using Ti--Zn, Mn--Zn, Ti--Mn--Zn, (Ti, Mn)--(Cu, Ni, Cr)--Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridescence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.

    摘要翻译： 本发明允许在使用Ti-Zn，Mn-Zn，Ti-Mn-Zn，（Ti，Mn） - （Cu，Ni，Cr）-Zn等的有色镀锌涂层中， 紫色，绿色，蓝色或其他颜色，通过控制镀锌浴的组成和氧化条件。 此外，可以开发尚未获得的金，深红，橄榄灰和彩虹色。 通过本发明实现的显色比常规更清楚。 代替镀锌，可以采用喷涂工艺。 有色锌涂层上的表面喷涂是有效的。