公开(公告)号：US06469425B1

公开(公告)日：2002-10-22

申请号：US09501241

申请日：2000-02-10

申请人： Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

发明人： Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

IPC分类号： H01J130

CPC分类号： H01J9/022 ,  H01J1/30 ,  H01J2201/30446

摘要： An electron emission film includes a matrix consisting essentially of amorphous carbon and fullerene-like structures consisting essentially of a two-dimensional network of six-membered carbon rings. The fullerene-like structures are dispersed in the matrix and partially project from the matrix. The weight ratio of amorphous carbon to the fullerene-like structures is about 50:50 to 5:95. Amorphous carbon contains nitrogen acting as a donor at a concentration of about 4×10−7 to 10 atom %.

摘要翻译： 电子发射膜包括基本上由无定形碳和富勒烯样结构组成的基体，其基本上由六元碳环的二维网络组成。 富勒烯样结构分散在基质中并部分地从基质上突出。 无定形碳与富勒烯样结构的重量比为约50:50至5:95。 无定形碳含有以约4×10-7至10原子％浓度的作为供体的氮。

公开(公告)号：US6057636A

公开(公告)日：2000-05-02

申请号：US931417

申请日：1997-09-16

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

IPC分类号： H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H03K17/54 ,  H01J1/46 ,  H01J1/02 ,  H01J1/05

CPC分类号： H01J21/105 ,  H03K17/545

摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

摘要翻译： 本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为 由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

公开(公告)号：US06297586B1

公开(公告)日：2001-10-02

申请号：US09263217

申请日：1999-03-05

申请人： Kazuya Nakayama ,  Tadashi Sakai ,  Naoshi Sakuma ,  Tomio Ono

发明人： Kazuya Nakayama ,  Tadashi Sakai ,  Naoshi Sakuma ,  Tomio Ono

IPC分类号： H01J116

CPC分类号： H01J21/105 ,  H01J1/3044

摘要： Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.

摘要翻译： 本文公开了一种冷阴极电力开关装置及其制造方法。 该器件具有高耐压性，并且可以以高产率制造，尽管其元件面积大以控制大电流。 在该方法中，制备微型发射体的阵列，并且发射极阵列粘附到具有沟槽的导电衬底上。 沿着沟槽切割导电衬底，形成多个衬底。 这些基板之间的间隙用绝缘树脂填充。 结果，以高产率制造用于控制大电流的多模块功率开关装置。 此外，在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块，在阴极上形成绝缘条，在绝缘条上形成栅极线，栅极连接到 门线。 可以一次控制从模块发射的电子。 每个模块可以具有连接到阴极线的阴极焊盘。 在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制，从而在每个发射极和阳极电极之间提供足够的绝缘距离。 因此，可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

公开(公告)号：US06323831B1

公开(公告)日：2001-11-27

申请号：US09153086

申请日：1998-09-15

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Kazuya Nakayama

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Kazuya Nakayama

IPC分类号： G09G322

CPC分类号： H01J3/022 ,  H01J7/44 ,  H01J19/78

摘要： An electron emitting comprising an emitter electrode for emitting electrons when applied with an electric field, a gate electrode for extracting the electrons emitted from the emitter electrode, when applied with a voltage from a signal source, the voltage being positive with respect to the emitter electrode, an anode electrode connected to a load, for collecting the electrons extracted by the gate electrode, and for passing an anode current, and a gate resistor connected between the signal source and the gate electrode, for reducing a gate current flowing in the gate electrode, without changing an anode current flowing in the anode, and for lowering a gate voltage by utilizing a voltage drop cause by the gate current.

摘要翻译： 一种电子发射器，包括用于在施加电场时发射电子的发射极电极，用于从发射极发射的电子提取的栅电极，当施加来自信号源的电压时，该电压相对于发射电极为正 连接到负载的阳极，用于收集由栅电极提取的电子和用于通过阳极电流，以及连接在信号源和栅电极之间的栅极电阻，用于减少在栅电极中流动的栅极电流 ，而不改变在阳极中流动的阳极电流，并且通过利用由栅极电流引起的电压降降低栅极电压。

公开(公告)号：US5721467A

公开(公告)日：1998-02-24

申请号：US707454

申请日：1996-09-04

申请人： Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

发明人： Li Zhang ,  Tadashi Sakai ,  Tomio Ono ,  Takashi Yamauchi

IPC分类号： H01J9/02 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC分类号： H01J1/3042 ,  H01J2201/30423

摘要： A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.

摘要翻译： 公开了一种场致发射冷阴极，其包括由发光材料形成的第一薄膜和与第一薄膜不同的第二薄膜，其中第二薄膜各自叠置在第一薄膜的主表面上， 形成层叠结构，层叠结构的侧面暴露第一薄膜和第二薄膜的侧端部，并且第一薄膜的暴露端部在电场下发射电子。 还公开了制造冷阴极的方法。

公开(公告)号：US5710436A

公开(公告)日：1998-01-20

申请号：US533744

申请日：1995-09-26

申请人： Tetsufumi Tanamoto ,  Riichi Katoh ,  Li Zhang ,  Tadashi Sakai ,  Shigeki Takahashi ,  Taketoshi Suzuki

发明人： Tetsufumi Tanamoto ,  Riichi Katoh ,  Li Zhang ,  Tadashi Sakai ,  Shigeki Takahashi ,  Taketoshi Suzuki

IPC分类号： H01L29/12 ,  H01L29/76 ,  H01L33/06 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L33/06 ,  B82Y10/00 ,  H01L29/127 ,  H01L29/7613

摘要： A quantum effect device includes a first layer having a plurality of charge confinement regions, a second layer opposing the first layer and separated from the first layer, the second layer having charges at a high concentration and consisting of a metal layer or a semiconductor layer, and a third layer consisting of an insulating layer or a semiconductor layer having a large band gap between the first layer and the second layer.

摘要翻译： 量子效应器件包括具有多个电荷限制区域的第一层，与第一层相对并与第一层分离的第二层，第二层具有高浓度的电荷并由金属层或半导体层组成， 以及由第一层和第二层之间具有大带隙的绝缘层或半导体层组成的第三层。

公开(公告)号：US06456014B1

公开(公告)日：2002-09-24

申请号：US09606013

申请日：2000-06-29

申请人： Tomio Ono ,  Tadashi Sakai ,  Li Zhang

发明人： Tomio Ono ,  Tadashi Sakai ,  Li Zhang

IPC分类号： G09G310

CPC分类号： H01J1/304 ,  H01J2201/319

摘要： A field emission device comprises an anode plate, an emitter plate having a plurality of filed emission portions that face the anode plate, and a gate plate having openings corresponding to the filed emission portions. The field emission device also comprises a current limiting element composed of a J FET or a MOSFET that is integrally formed with the gate plate and that is inserted between the gate plate and a gate voltage supply terminal. The loss caused by the emitter current is small as the current limiting element is inserted into a gate input portion. If the field emission device including a number of blocks each having the above structure is constituted, a power switching device having sufficient redundancy against a short circuit between the gate and the emitter can be implemented.

摘要翻译： 场发射装置包括阳极板，具有面向阳极板的多个场发射部分的发射极板以及具有对应于场发射部分的开口的栅极板。 励磁发射装置还包括由与栅极板一体形成并且插入在栅极板和栅极电压提供端子之间的J FET或MOSFET组成的限流元件。 由于限流元件被插入到栅极输入部分中，由发射极电流引起的损耗很小。 如果构成包括多个具有上述结构的块的场发射器件，则可以实现具有足够的冗余以抵抗栅极和发射极之间的短路的功率开关器件。

公开(公告)号：US5898258A

公开(公告)日：1999-04-27

申请号：US788695

申请日：1997-01-24

申请人： Tadashi Sakai ,  Tomio Ono ,  Li Zhang

发明人： Tadashi Sakai ,  Tomio Ono ,  Li Zhang

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/025

摘要： A field emission type cold cathode apparatus comprises a mother material layer made of an n-type silicon layer, a conical emitter having an arcuate side surface, an insulating layer formed in a surface region of the mother material layer in a manner to define the arcuate side surface of the emitter and having a concave portion formed to expose the tip portion of the conical emitter, the depth of the concave portion being determined such that the lower portion of the emitter covering a region more than half the height of the emitter is buried in the insulating layer, and a gate electrode formed over the insulating film in a manner to surround the emitter and having an open portion exposing the tip portion of the emitter, the diameter of the open portion being smaller than the diameter in the base portion of the emitter.

摘要翻译： 场致发射型冷阴极装置包括由n型硅层构成的母材层，具有弓形侧面的圆锥形发射体，以母材层的表面区域形成绝缘层，以限定弓形 并且具有形成为露出锥形发射器的尖端部分的凹部，凹部的深度被确定为使得覆盖发射器的高度的一半以上的区域的发射器的下部被掩埋 在所述绝缘层中形成有栅电极，所述栅电极以围绕所述发射极的方式形成在所述绝缘膜上方，并具有露出所述发射极的前端部的开口部，所述开口部的直径比所述绝缘膜的基部的直径小 发射器。

公开(公告)号：US5644156A

公开(公告)日：1997-07-01

申请号：US420515

申请日：1995-04-12

申请人： Taketoshi Suzuki ,  Tadashi Sakai ,  Li Zhang ,  Taijun Murakami

发明人： Taketoshi Suzuki ,  Tadashi Sakai ,  Li Zhang ,  Taijun Murakami

IPC分类号： H05B33/10 ,  H01L29/16 ,  H01L29/47 ,  H01L31/028 ,  H01L31/173 ,  H01L31/18 ,  H01L33/34 ,  H01L33/42 ,  H05B33/12 ,  H05B33/22 ,  H01L27/095 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L33/346 ,  H01L29/16 ,  H01L29/47 ,  H01L31/0284 ,  H01L31/173 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.

摘要翻译： 半导体器件包括杂质浓度为1×10 19至1×10 21 cm -3的多孔硅层，其中形成多个孔，并且形成在多孔硅层的扩展表面上的厚度为0.01至10μm的热氧化膜 ，其中所述扩展表面包括所述孔的内表面。

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。