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1.发明授权Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride 失效形成n型半导体立方氮化硼的欧姆接触电极的方法
公开(公告)号：US5298461A
公开(公告)日：1994-03-29
申请号：US734561
申请日：1991-07-23
IPC分类号： H01L29/20 , H01L29/45 , H01L21/441
CPC分类号： H01L29/20 , H01L29/452 , Y10S438/932
摘要： An ohmic contact electrode is formed on an n-type semiconductor cubic boron nitride by using a IVB metal; an alloy with a IVB metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a VB metal; or an alloy with a VB metal.
摘要翻译： 通过使用IVB金属在n型半导体立方氮化硼上形成欧姆接触电极; 具有IVB金属的合金; 具有Si或S的金属; 与Si或S的合金; 具有B，Al，Ga或In的金属; 具有B，Al，Ga或In的合金; 一种VB金属; 或具有VB金属的合金。
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公开(公告)号：US5210431A
公开(公告)日：1993-05-11
申请号：US831651
申请日：1992-02-07
CPC分类号： H01L29/1602 , H01L21/043 , H01L29/45
摘要： In an ohmic contact electrode for the p-type semiconductor diamond, the electrode is formed of metals or metallic compounds containing boron on a p-type semiconductor diamond, so as to obtain a decreased contact resistance.
摘要翻译： 在用于p型半导体金刚石的欧姆接触电极中，电极由在p型半导体金刚石上含有硼的金属或金属化合物形成，以获得降低的接触电阻。
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3.发明授权
公开(公告)号：US5422500A
公开(公告)日：1995-06-06
申请号：US60530
申请日：1993-05-13
CPC分类号： H01L29/20 , H01L29/452 , Y10S438/932
摘要： An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal or an alloy with a IVa metal or a layer of Au or Ag.
摘要翻译： 通过使用IVa金属或与IVa金属或Au或Ag层的合金在n型半导体立方氮化硼上形成的欧姆接触电极。
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4.发明授权Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer 失效具有在BN衬底和活性金刚石层之间形成的非掺杂金刚石层的金刚石半导体器件
公开(公告)号：US5306928A
公开(公告)日：1994-04-26
申请号：US884138
申请日：1992-05-18
IPC分类号： C30B29/04 , C23C16/26 , C23C16/27 , H01C7/04 , H01L21/20 , H01L21/205 , H01L27/12 , H01L29/10 , H01L29/16 , H01L29/872 , H01L31/0312 , H01L27/095 , H01L29/12 , H01L29/48
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02425 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/107 , H01L29/1602
摘要： A semiconductor device utilizing a non-doped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer structure reduces reverse leak current.
摘要翻译： 在衬底和有源金刚石层之间利用非掺杂金刚石层的半导体器件。 这种结构降低了电阻率并增加了载流子密度。 此外，当在有源层上形成接触时，该层结构减少了反向漏电流。
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5.发明授权
公开(公告)号：US5285109A
公开(公告)日：1994-02-08
申请号：US705594
申请日：1991-05-24
CPC分类号： H01L29/20 , H01L29/452 , Y10S438/932
摘要： An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal; an alloy with a IVa metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a Va metal; or an alloy with a Va metal.
摘要翻译： 通过使用IVa金属在n型半导体立方氮化硼上形成的欧姆接触电极; 具有IVa金属的合金; 具有Si或S的金属; 与Si或S的合金; 具有B，Al，Ga或In的金属; 具有B，Al，Ga或In的合金; Va金属 或与Va金属的合金。
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6.发明授权Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate 失效金刚石半导体器件与钻石活性层和基底之间的非掺杂金刚石薄膜
公开(公告)号：US5144380A
公开(公告)日：1992-09-01
申请号：US592794
申请日：1990-10-04
IPC分类号： C30B29/04 , C23C16/26 , C23C16/27 , H01C7/04 , H01L21/20 , H01L21/205 , H01L27/12 , H01L29/10 , H01L29/16 , H01L29/872
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02425 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/107 , H01L29/1602
摘要： A semiconductor device utilizing a nondoped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer structure reduces reverse leak current.
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公开(公告)号：US5075757A
公开(公告)日：1991-12-24
申请号：US556722
申请日：1990-07-25
IPC分类号： H01L29/78 , H01L21/04 , H01L21/203 , H01L21/205 , H01L21/28 , H01L21/337 , H01L29/43 , H01L29/45 , H01L29/808 , H01L33/16 , H01L33/34 , H01L33/40
CPC分类号： H01L21/043 , H01L29/45
摘要： As electrodes for the semiconductor diamond, the p.sup.+ or n.sup.+ polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase is formed on the semiconductor diamond, whereby an ohmic contact electrode with low contact resistance can be made.
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公开(公告)号：US5250149A
公开(公告)日：1993-10-05
申请号：US664581
申请日：1991-03-06
CPC分类号： C30B25/02 , C23C16/0236 , C23C16/0245 , C23C16/274 , C23C16/278 , C23C16/342 , C30B29/04 , C30B29/403
摘要： A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas, a fluorine containing gas, a nitrogen containing plasma or a hydrogen containing plasma. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions.
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公开(公告)号：US5117267A
公开(公告)日：1992-05-26
申请号：US588823
申请日：1990-09-27
CPC分类号： H01L33/40 , H01L29/47 , H01L33/002 , H01L33/0054 , H01L33/32 , H01L33/34 , Y10S438/932
摘要： A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.
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公开(公告)号：US5476812A
公开(公告)日：1995-12-19
申请号：US326748
申请日：1994-10-20
CPC分类号： H01L33/40 , H01L29/47 , H01L33/002 , H01L33/0054 , H01L33/32 , H01L33/34 , Y10S438/932
摘要： A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.
摘要翻译： 一种在所述p型金刚石层的表面上包括p型金刚石层和n型立方氮化硼层的半导体异质结结构。 这种异质结结构对于诸如二极管，晶体管，激光器和整流器的半导体器件，特别是发射从蓝光到紫外光的光的元件是有用的。
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