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1.发明授权Hollow polymer particles, method for preparing hollow polymer particles, porous ceramic filter, and method for preparing porous ceramic filter 有权中空聚合物颗粒，中空聚合物颗粒的制备方法，多孔陶瓷过滤器以及制备多孔陶瓷过滤器的方法公开(公告)号：US07319114B2
公开(公告)日：2008-01-15
申请号：US10471502
申请日：2002-03-12
CPC分类号： C04B38/0655 , B01D39/2068 , C04B35/195 , C04B38/06 , C04B2111/00793 , C08F2/18 , C08J3/128 , C08J9/20 , C08J2483/04 , Y10T428/249958 , Y10T428/254 , Y10T428/2982 , Y10T428/2993 , C04B38/0054 , C04B38/067 , C04B35/00
摘要： Hollow polymer particles are provided to have an average particle diameter of 15 μm or more and 500 μm or less and a 10%-compressive strength of 1.5 MPa or more, and the hollow polymer particle includes a hollow portion in the interior. In addition, a porous ceramic filter is provided by firing a shaped material composed of a mixture in which the above-described hollow polymer particles are mixed to disperse in a ceramic composition.
摘要翻译： 中空聚合物粒子的平均粒径为15μm以上且500μm以下，10％压缩强度为1.5MPa以上，中空聚合物粒子在内部包含中空部。 此外，通过烧结由混合物组成的成形材料来提供多孔陶瓷过滤器，其中混合上述中空聚合物颗粒以分散在陶瓷组合物中。
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公开(公告)号：US06617363B2
公开(公告)日：2003-09-09
申请号：US10052701
申请日：2002-01-17
IPC分类号： C08J920
CPC分类号： B01F17/0085 , B01J13/14
摘要： A method of producing a thermally expansive microcapsule that is excellent in heat resistance and solvent resistance, narrow in breadth of the distribution of particle size, and extremely low in secondary cohesion of the particles when heated, wherein a polymer obtained from the component comprising not less than 80 weight % of monomer of nitrile series, less than weight % of monomer of non-nitrile series, and 0.05-1 weight % of at least tetrafunctional cross-linking agent and/or of long side chain of cross-linking agent is used to micro-encapsulate a volatile expanding agent that comes into its gaseous state at a temperature equal to or less than a softening point of the polymer.
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公开(公告)号：US20100214432A1
公开(公告)日：2010-08-26
申请号：US12709840
申请日：2010-02-22
申请人： Yasushi Nakata , Masataka Ito
发明人： Yasushi Nakata , Masataka Ito
IPC分类号： H04N5/228 , H01L31/0232 , H01L31/14
CPC分类号： H01L27/14629 , H01L27/14627 , H01L27/14636 , H01L31/02327
摘要： A device comprises a photoelectric conversion portion including a light receiving surface, and a condensing structure which condenses light to the photoelectric conversion portion, wherein in the condensing structure, a first insulating film and a second insulating film having a refractive index higher than that of the first insulating film are laid out in a plane perpendicular to a normal passing through a center of the light receiving surface such that a density of the second insulating film is higher in a central portion of the plane than in a peripheral portion of the plane, and a layout pattern of the first insulating film and the second insulating film in the plane includes a portion having a dimension not more than a maximum wavelength of a visible light range.
摘要翻译： 一种器件包括光电转换部分，该光电转换部分包括光接收表面，以及将光聚合到光电转换部分的聚光结构，其中在所述聚光结构中，具有折射率高于所述光电转换部分的折射率的第一绝缘膜和第二绝缘膜 第一绝缘膜布置在垂直于通过光接收表面的中心的法线的平面中，使得第二绝缘膜的密度在平面的中心部分比在平面的周边部分高，并且 平面中的第一绝缘膜和第二绝缘膜的布局图案包括具有不大于可见光范围的最大波长的尺寸的部分。
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4.发明授权Photoelectric conversion device, its manufacturing method, and image pickup device 失效光电转换装置及其制造方法以及摄像装置公开(公告)号：US07541211B2
公开(公告)日：2009-06-02
申请号：US11318930
申请日：2005-12-28
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603
摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中所述主平面具有偏离角度，每个角度θ与垂直于基准的至少两个平面（1 0°）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在0°的范围内与主平面垂直的方向形成角度 °
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公开(公告)号：US08330828B2
公开(公告)日：2012-12-11
申请号：US12709840
申请日：2010-02-22
申请人： Yasushi Nakata , Masataka Ito
发明人： Yasushi Nakata , Masataka Ito
IPC分类号： H04N5/335 , H04N5/225 , H04N3/14 , G03B13/00 , H01L31/062 , H01L31/113 , H01L31/0232 , H01L27/146 , H01L27/00
CPC分类号： H01L27/14629 , H01L27/14627 , H01L27/14636 , H01L31/02327
摘要： A device comprises a photoelectric conversion portion including a light receiving surface, and a condensing structure which condenses light to the photoelectric conversion portion, wherein in the condensing structure, a first insulating film and a second insulating film having a refractive index higher than that of the first insulating film are laid out in a plane perpendicular to a normal passing through a center of the light receiving surface such that a density of the second insulating film is higher in a central portion of the plane than in a peripheral portion of the plane, and a layout pattern of the first insulating film and the second insulating film in the plane includes a portion having a dimension not more than a maximum wavelength of a visible light range.
摘要翻译： 一种器件包括光电转换部分，该光电转换部分包括光接收表面，以及将光聚合到光电转换部分的聚光结构，其中在所述聚光结构中，具有折射率高于所述光电转换部分的折射率的第一绝缘膜和第二绝缘膜 第一绝缘膜布置在垂直于通过光接收表面的中心的法线的平面中，使得第二绝缘膜的密度在平面的中心部分比在平面的周边部分高，并且 平面中的第一绝缘膜和第二绝缘膜的布局图案包括具有不大于可见光范围的最大波长的尺寸的部分。
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公开(公告)号：US20080038183A1
公开(公告)日：2008-02-14
申请号：US11680499
申请日：2007-02-28
申请人： Yasushi Nakata
发明人： Yasushi Nakata
CPC分类号： C09K11/65 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B32/174 , C01B2202/02
摘要： A solution is produced by introducing carboxymethyl cellulose (CMC) and a carbon nanotube bulk material containing a cluster of aggregated single-walled carbon nanotubes into water (H2O). The single-walled carbon nanotubes are solubilized by CMC in the solution and separated from the cluster. The solution in which the single-walled carbon nanotubes are dispersed by using ultrasonic waves is filtered by filters to produce a carbon nanotube solution containing dispersed single-walled carbon nanotubes. A carbon nanotube-containing film is produced by dropping the carbon nanotube solution onto a plate and drying the carbon nanotube solution.
摘要翻译： 通过将羧甲基纤维素（CMC）和含有聚集的单壁碳纳米管簇的碳纳米管块状材料引入水（H 2 O 2）中来制备溶液。 单壁碳纳米管通过CMC溶解在溶液中并与簇分离。 通过使用超声波将单壁碳纳米管分散在其中的溶液通过过滤器过滤以产生含有分散的单壁碳纳米管的碳纳米管溶液。 通过将碳纳米管溶液滴加到平板上并干燥碳纳米管溶液来制备含碳纳米管的膜。
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7.发明申请Photoelectric conversion device, its manufacturing method, and image pickup device 失效光电转换装置及其制造方法以及摄像装置公开(公告)号：US20060141655A1
公开(公告)日：2006-06-29
申请号：US11318930
申请日：2005-12-28
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603
摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中主平面具有偏角，每个角度θ与至少两个垂直于基准的平面（100 ）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在垂直于主平面的方向上在0°< phi <= 45°，此外，离子注入方向的投影方向与主平面的方向在0°<α<90°的范围内与两个平面方向形成每个角度α。
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公开(公告)号：US4457136A
公开(公告)日：1984-07-03
申请号：US358797
申请日：1982-03-16
申请人： Tomoyoshi Nishizaki , Minoru Miyamoto , Kazuaki Miyamoto , Ken Yoshida , Kathuhiko Yamaji , Yasushi Nakata
发明人： Tomoyoshi Nishizaki , Minoru Miyamoto , Kazuaki Miyamoto , Ken Yoshida , Kathuhiko Yamaji , Yasushi Nakata
CPC分类号： C01B3/0031 , C01B3/0005 , C01B3/0036 , C01B3/0063 , C01B3/0068 , F17C11/00 , F24J1/00 , F25B17/12 , F25B29/006 , F28D20/003 , F28F2215/00 , Y02E60/142 , Y02E60/321 , Y02E60/327 , Y02E70/30 , Y02P20/129
摘要： A metal hydride reactor comprising a tubular pressure receptacle having an opening at its one end and a metal hydride filling the receptacle therein, at least a part of the outer wall surface of the tubular pressure receptacle forming a heat-exchanging surface; a heat-conducting fin of a heat-conducting material provided to transmit heat from the metal hydride in the pressure receptacle to the heat-exchanging surface and limit the location of the metal hydride in the pressure receptacle; and at least one porous member extending axially of the receptacle for forming within the receptacle a hydrogen gas flow passage leading to the opening of the receptacle, the porous member being permeable to hydrogen gas but impermeable to the metal hydride.
摘要翻译： 一种金属氢化物反应器，包括在其一端具有开口的管状压力容器和在其中填充容器的金属氢化物，管状压力容器的外壁表面的至少一部分形成热交换表面; 导热材料的导热翅片，用于将热量从压力容器中的金属氢化物传递到热交换表面，并限制金属氢化物在压力贮器中的位置; 以及至少一个在所述容器的轴向延伸的多孔构件，用于在所述容器内形成通向所述容器开口的氢气流动通道，所述多孔构件可渗透氢气，但对所述金属氢化物不可渗透。
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9.发明申请公开(公告)号：US20120168073A1
公开(公告)日：2012-07-05
申请号：US13393549
申请日：2010-08-18
申请人： Masahiko Gotoh , Yasushi Nakata , Hitomi Muraoka , Minoru Nakata
发明人： Masahiko Gotoh , Yasushi Nakata , Hitomi Muraoka , Minoru Nakata
CPC分类号： E04B1/78 , B29C48/08 , B29C48/155 , B29C65/028 , B29C65/5057 , B29C65/7847 , B29C66/1122 , B29C66/438 , B29C66/4722 , B29C66/71 , B32B27/06 , B32B27/36 , B32B2307/202 , B32B2307/304 , B32B2307/40 , B29K2067/003
摘要： Provided are a device for producing a sheet structure including a flexible sheet and a structure formed on the sheet whereby the sheet structure can be easily produced and a method for producing the sheet structure. The production device 1 includes: a table 10 having in a surface thereof a holding region 12; a formation mechanism 31 for forming a structure 2b; a holding mechanism 25 for holding a sheet 2a on the holding region 12; and a control unit 40. The holding mechanism 25 includes: porous materials 14b and 15b provided so that they are at least partly located within the holding region 12 and having interconnected cells; a negative-pressure generating mechanism 17; and a positive-pressure generating mechanism 20. The control unit 40 allows the negative-pressure generating mechanism 17 to generate a negative pressure to hold the sheet 2a, then allows the formation mechanism 31 to form the structure 2b, and then allows the positive-pressure generating mechanism 20 to generate a positive pressure.
摘要翻译： 提供一种用于制造片状结构的装置，其包括柔性片和形成在片材上的结构，由此可以容易地制造片状结构，以及制造片状结构的方法。 制造装置1包括：工作台10，其表面具有保持区域12; 用于形成结构2b的形成机构31; 用于将片材2a保持在保持区域12上的保持机构25; 保持机构25包括：多孔材料14b和15b，其设置成使得它们至少部分地位于保持区域12内并且具有互连的电池; 负压产生机构17; 和正压发生机构20.控制单元40允许负压产生机构17产生用于保持片材2a的负压，然后允许形成机构31形成结构2b，然后， 压力产生机构20以产生正压。
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公开(公告)号：US20080054388A1
公开(公告)日：2008-03-06
申请号：US11844545
申请日：2007-08-24
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.
摘要翻译： 公开了一种光电转换装置。 光电转换装置包括具有多个光电转换器的半导体衬底，布置在半导体衬底上的多层布线结构以及布置在多层布线结构上的平坦化层。 多层布线结构包括第一布线层，布置成覆盖第一布线层的层间绝缘膜和布置在层间绝缘膜上的用作顶部布线层的第二布线层。 平坦化层覆盖层间绝缘膜和第二布线层。 第二布线层比第一布线层薄。
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