公开(公告)号：US06846521B2

公开(公告)日：2005-01-25

申请号：US10650763

申请日：2003-08-29

申请人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

发明人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： C23C16/503 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  H01J37/32532

摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

摘要翻译： 包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部 设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。 分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。 分离电极面对带状基板的表面的总面积与其上安装有分离电极的非分割电极的面积相同。 这提高了用于形成沉积膜的装置中产生的等离子体的均匀性，并且能够降低形成沉积膜所需的成本。

公开(公告)号：US06470823B2

公开(公告)日：2002-10-29

申请号：US09771650

申请日：2001-01-30

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Yuzo Koda ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Yuzo Koda ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32532

摘要： A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b being an average distance between the substrate and a horizontal plane face of the power application electrode which is opposed to a face of the substrate.

摘要翻译： 一种成膜设备，包括真空室，电力施加电极，原料气体引入到真空室中的原料气体引入部分和真空室排出的排气部分，电力施加电极 被布置成与位于真空室中的成膜用基板相对，其特征在于，至少所述原料气体导入部或者所述排气部设置有用于截取等离子体的期望厚度的开口调节部件， 电力施加电极和开口调整构件被布置成满足等式a或c> = b，其中电源施加电极和设置在原料气体导入部分的开口调节构件之间的距离最短，c是最短的 电力施加电极和设置在排气口处的开口调节构件之间的距离 离子部分，b是与基板的表面相对的电力施加电极的基板与水平面面之间的平均距离。

公开(公告)号：US06638359B2

公开(公告)日：2003-10-28

申请号：US09772988

申请日：2001-01-31

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  C23C18/14 ,  H01L31/1804 ,  H05K3/02 ,  H05K3/105 ,  Y02E10/547 ,  Y02P70/521

摘要： A deposited film forming apparatus has a vacuum chamber containing a power applying electrode spaced above a grounded flat plate base member. The power applying electrode is fixed to the base member with a plurality of electrically insulating fastening members, at positions effective to suppress deformation of the power applying electrode, wherein an electrically insulating spacer is placed between the power supplying electrode and the base member to electrically insulate said power applying electrode from the base member.

摘要翻译： 沉积膜形成装置具有真空室，该真空室包含在接地平板基体上方间隔开的功率施加电极。 功率施加电极在有效抑制功率施加电极的变形的位置处用多个电绝缘的紧固构件固定到基底构件，其中电绝缘间隔物放置在供电电极和基底构件之间以电绝缘 所述功率施加电极从所述基底构件。

公开(公告)号：US06632284B2

公开(公告)日：2003-10-14

申请号：US09767856

申请日：2001-01-24

申请人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

发明人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  H01J37/32532

摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted.

摘要翻译： 包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部 设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。 分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。 分开电极面对带状基板的表面的总面积与安装有分离电极的非分割电极的面积相同。

公开(公告)号：US06526910B2

公开(公告)日：2003-03-04

申请号：US09727440

申请日：2000-12-04

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545

摘要： A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw material gas into said vacuum chamber, said power application electrode being arranged in said vacuum chamber so as to oppose to a substrate arranged in said vacuum chamber, characterized in that said power application electrode has a reinforcing member or said power application electrode comprises a power application electrode with no reinforcing member which has a thickness which is greater than a distance between said substrate and said power application electrode. A film-forming method using said film-forming apparatus.

公开(公告)号：US06855377B2

公开(公告)日：2005-02-15

申请号：US10656131

申请日：2003-09-08

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： H05H1/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  H01L31/18 ,  H05H1/02 ,  C23C16/00 ,  H05H1/00

CPC分类号： C23C16/5096 ,  C23C16/545 ,  H01J37/32009 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.

摘要翻译： 沉积膜形成装置具有设置在真空室中接地的平板型基体上方的功率施加电极和用于向施加电力供电的电源，沉积膜形成装置被构造成提供电力 从电源到施加电极，以在电力施加电极和与真空室中的功率施加电极相对配置的基板之间的放电空间中产生等离子体，并且用作与电力成对的电极 从而分解引入到真空室中的源气体，以在基板上形成沉积膜，其中功率施加电极固定到基底构件上，其中施加电力的电极与基体隔离。

公开(公告)号：US07074641B2

公开(公告)日：2006-07-11

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L21/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US20050227457A1

公开(公告)日：2005-10-13

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L31/04 ,  C30B1/00 ,  C30B25/10 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US07211708B2

公开(公告)日：2007-05-01

申请号：US09822191

申请日：2001-04-02

申请人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： A62D3/00 ,  B08B15/00 ,  B08B5/00 ,  H05H1/03 ,  H05H1/16 ,  H05H1/48

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

公开(公告)号：US20100191949A1

公开(公告)日：2010-07-29

申请号：US12666615

申请日：2007-07-26

申请人： Takeshi Shishido ,  Jun Anzai

发明人： Takeshi Shishido ,  Jun Anzai

IPC分类号： G06F9/24

CPC分类号： G06F21/575

摘要： An information processing terminal that performs falsification verification at the time of bootstrapping thereof includes: a state sensor that senses a connection of an external connector or a data reception via the external connector, to judge whether or not a program stored in the information processing terminal is in a rewritable state; a flag storage that stores a flag referred to at the time of bootstrapping of the information processing terminal therein; a flag controller that turns on the flag according to a judged result that the program is in the rewritable state by the state sensor to record the turn-on flag in the flag storage; and a falsification verifier that judges whether or not it is necessary to carry out falsification verification according to a status of the flag, and performs falsification verification of the program only in the case in which the flag in the flag storage is turned on, at the time of bootstrapping of the information processing terminal.

摘要翻译： 一种信号处理终端，在进行伪造时进行伪造验证，包括：状态传感器，其通过外部连接器感测外部连接器或数据接收的连接，判断存储在信息处理终端中的程序是否为 在可重写的状态; 标志存储器，其存储在其中信息处理终端自举时引用的标志; 标志控制器，其根据由所述状态传感器执行程序处于所述可重写状态的判断结果来接通所述标志，以将所述开启标志记录在所述标志存储器中; 以及伪造验证器，其判断是否需要根据标志的状态进行伪造验证，并且仅在标志存储器中的标志被打开的情况下执行程序的伪造验证，在 信息处理终端自举的时间。