公开(公告)号：US5985402A

公开(公告)日：1999-11-16

申请号：US933893

申请日：1992-08-24

申请人： Takao Nakamura ,  Takaaki Shirakura ,  Hiroyuki Kataoka

发明人： Takao Nakamura ,  Takaaki Shirakura ,  Hiroyuki Kataoka

IPC分类号： G11B5/60 ,  G11B5/64 ,  G11B5/73 ,  G11B5/82 ,  G11B5/84 ,  G11B19/04 ,  G11B5/66

CPC分类号： G11B5/7315 ,  G11B5/64 ,  G11B5/82 ,  G11B5/84 ,  G11B5/8404 ,  G11B19/04 ,  G11B5/6011 ,  Y10T428/24355

摘要： In a thin film magnetic disk, a micro projections are formed on a substrate in a circumferential direction. A height of the micro projections is several nm to several tens of nm and a density of the micro projections is several hundred pcs/mm to several tens of thousands of pcs/mm.sup.2. With this arrangement, a magnetic disk fulfilling a head floating characteristic of a narrow space and further fulfilling a mechanical anti-sliding characteristic such as a contact start-stops characteristic and a head stickiness and the like is provided so that high reliability is attained. In the thin film magnetic disk, a bearing ratio curve of a sectional shape measured in a radial direction of the textured substrate has a bearing ratio of 0.1 to 10% at the surface layer (a cutting height of 5 to 10 nm). In this way, a pressure receiving area under a sliding of the magnetic head is increased.

摘要翻译： 在薄膜磁盘中，在圆周方向上在基板上形成微突起。 微突起的高度为几nm至几十nm，微突起的密度为几百个/ mm至几万个/ mm 2。 通过这种布置，提供了满足狭窄空间的磁头浮动特性并进一步实现诸如触点启动 - 停止特性和磁头粘性等的机械防滑特性的磁盘，从而获得高可靠性。 在薄膜磁盘中，在纹理基板的径向方向上测量的截面形状的轴承比曲线在表面层（切割高度为5〜10nm）的轴承比为0.1〜10％。 以这种方式，增加了磁头滑动下的受压面积。

公开(公告)号：US5825591A

公开(公告)日：1998-10-20

申请号：US768958

申请日：1996-12-18

申请人： Takao Nakamura ,  Nobuya Sekiyama ,  Keiko Nakano ,  Kenji Furusawa ,  Hiroyuki Kataoka ,  Takaaki Shirakura ,  Shinya Matsuoka

发明人： Takao Nakamura ,  Nobuya Sekiyama ,  Keiko Nakano ,  Kenji Furusawa ,  Hiroyuki Kataoka ,  Takaaki Shirakura ,  Shinya Matsuoka

IPC分类号： G11B5/02 ,  G11B5/187 ,  G11B5/60 ,  G11B5/71 ,  G11B5/725 ,  G11B21/21 ,  G11B5/48 ,  G11B21/16

CPC分类号： G11B5/6005

摘要： The present invention relates to a magnetic disk unit of a high memory capacity wherein a magnetic head and a magnetic disk with a lubricant layer formed on the surface thereof are allowed to perform a relative motion in a mutually contacted state to write and read out information of a high recording density, and the invention is also concerned with the shape and material of the magnetic head suitable for a continual sliding motion of the head on the magnetic disk surface, as well as the lubricant layer formed on the disk surface. According to the present invention, the magnetic head, which has a slider surface of a predetermined curvature, is supported by an arm through a spring and is pushed onto the magnetic disk surface with the lubricant layer formed thereon, then with rotation of the magnetic disk, the lubricant layer liquefies and information is recorded or read out in a contacted state of the head and the disk. The distance between the magnetic head and the disk surface can be shortened to a great extent and the recording density of the magnetic disk can be increased remarkably, thereby permitting a larger capacity of the magnetic disk unit.

摘要翻译： 本发明涉及具有高存储容量的磁盘单元，其中磁头和在其表面上形成有润滑层的磁盘被允许在相互接触的状态下执行相对运动以写入和读出信息 高记录密度，并且本发明还涉及适用于磁头在磁盘表面上的连续滑动运动的磁头的形状和材料以及形成在磁盘表面上的润滑剂层。 根据本发明，具有预定曲率的滑块表面的磁头通过弹簧由臂支撑，并且在其上形成润滑剂层的同时被推到磁盘表面上，然后随着磁盘的旋转 润滑剂层液化并且在头部和盘的接触状态下记录或读出信息。 磁头和盘表面之间的距离可以被很大程度地缩短，从而可以显着地提高磁盘的记录密度，从而允许磁盘单元的容量更大。

公开(公告)号：US5737159A

公开(公告)日：1998-04-07

申请号：US673470

申请日：1996-07-01

申请人： Takao Nakamura ,  Takaaki Shirakura ,  Hiroyuki Kataoka

发明人： Takao Nakamura ,  Takaaki Shirakura ,  Hiroyuki Kataoka

IPC分类号： G11B5/60 ,  G11B5/64 ,  G11B5/82 ,  G11B5/84 ,  G11B19/04

CPC分类号： G11B5/64 ,  G11B5/82 ,  G11B5/84 ,  G11B5/8404 ,  G11B19/04 ,  G11B5/6011

摘要： In a thin film magnetic disk, a micro projections are formed on a substrate in a circumferential direction. A height of the micro projections is several nm to several tens of nm and a density of the micro projections is several hundred pcs/mm to several tens of thousands of pcs/mm.sup.2. With this arrangement, a magnetic disk fulfilling a head floating characteristic of a narrow space and further fulfilling a mechanical anti-sliding characteristic such as a contact start-stops characteristic and a head stickiness and the like is provided so that high reliability is attained. In the thin film magnetic disk, a bearing ratio curve of a sectional shape measured in a radial direction of the textured substrate has a bearing ratio of 0.1 to 10% at the surface layer (a cutting height of 5 to 10 nm). In this way, a pressure receiving area under a sliding of the magnetic head is increased.

公开(公告)号：US4842917A

公开(公告)日：1989-06-27

申请号：US88380

申请日：1987-08-24

申请人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

发明人： Tomoyuki Ohno ,  Yoshihiro Shiroishi ,  Sadao Hishiyama ,  Hiroyuki Suzuki ,  Takaaki Shirakura ,  Shinya Matsuoka ,  Makoto Sano ,  Takao Nakamura ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Kenzo Susa

IPC分类号： G11B5/73

CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/24355

摘要： A magnetic recording medium having a magnetic film formed on a substrate directly or through an underlayer from an alloy containing Co as a principal component. The central line average surface roughness Ra and maximum surface roughness Rmax of the magnetic film in a direction perpendicular to the direction of magnetic recording are selected so as to fall within the ranges of 1 nm.ltoreq.Ra.ltoreq.20 nm and Rmax.ltoreq.25 Ra, respectively, and the in-plane magnetic anisotropy energy Ku of the magnetic film is selected to fall within the range of 0.ltoreq.Ku.ltoreq.8.times.10.sup.5 erg/cm.sup.3. Thus, it is possible to minimize the value of modulation which represents the degree of variation of read output on the same circumference of a magnetic disk. It is also possible to reduce the noise generated in read and write operations by forming the magnetic film so as have no crystallographic orientation.

摘要翻译： 一种磁记录介质，其具有直接或通过底层从基板上形成的含有Co作为主要成分的合金的磁性膜。 选择磁性膜在垂直于磁记录方向的方向上的中心线平均表面粗糙度Ra和最大表面粗糙度Rmax，使其落入1nm≤Ra<20nm的范围内，并且Rmax < / = 25Ra，磁性膜的面内磁各向异性能Ku被选择在0≤K≤5×10 5Ω/ cm 3的范围内。 因此，可以将表示在磁盘的同一圆周上的读取输出的变化程度的调制值最小化。 也可以通过形成磁性膜来减少读取和写入操作中产生的噪声，从而没有结晶取向。

公开(公告)号：US08563982B2

公开(公告)日：2013-10-22

申请号：US13311595

申请日：2011-12-06

申请人： Takao Nakamura ,  Kazuki Ishii ,  Daisuke Mutou ,  Hidenori Seki

发明人： Takao Nakamura ,  Kazuki Ishii ,  Daisuke Mutou ,  Hidenori Seki

IPC分类号： H01L27/14

CPC分类号： G02F1/136286 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133354

摘要： In a liquid crystal display device that uses a top gate TFT, a contact hole is formed to connect to an image signal line. An inorganic passivation film and an organic passivation film are formed in this order so as to cover the TFT, on which a common electrode is formed. Then, an interlayer insulating film is formed on the common electrode. A through hole for gas release is formed in the interlayer insulating film. The diameter of the through hole is greater than the diameter of the contact hole, so as to be able to easily release gas from the organic passivation film, and to prevent the interlayer insulating film from peeling off.

摘要翻译： 在使用顶栅TFT的液晶显示装置中，形成与图像信号线连接的接触孔。 依次形成无机钝化膜和有机钝化膜，以覆盖其上形成有公共电极的TFT。 然后，在公共电极上形成层间绝缘膜。 在层间绝缘膜中形成用于气体释放的通孔。 通孔的直径大于接触孔的直径，从而能够容易地从有机钝化膜释放气体，并且防止层间绝缘膜剥离。

公开(公告)号：US20120299010A1

公开(公告)日：2012-11-29

申请号：US13484776

申请日：2012-05-31

申请人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US20110272734A1

公开(公告)日：2011-11-10

申请号：US13144696

申请日：2009-11-11

申请人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

发明人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

IPC分类号： H01L33/30

CPC分类号： C30B25/18 ,  C30B29/403 ,  H01L33/007

摘要： The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α2, then (α1−α2)/α2 is between −0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

摘要翻译： 本发明是一种使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配备透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的 和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。 使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为α1，氮化物系化合物半导体薄膜的热膨胀系数为α2，则α1-α2/α2为 在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。 透明基板10的绝对折射率优选在氮化物系化合物半导体薄膜的绝对折射率的60％〜140％的范围内。

公开(公告)号：US08018029B2

公开(公告)日：2011-09-13

申请号：US12565290

申请日：2009-09-23

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface, and, an active layer provided on the semiconductor film, the active layer having a quantum well structure. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.

摘要翻译： 用于氮化物发光器件的氮化镓基外延晶片包括具有主表面的氮化镓衬底，设置在主表面上的氮化镓基半导体膜，以及设置在半导体膜上的有源层，活性层 层具有量子阱结构。 主表面的法线和氮化镓衬底的C轴彼此形成偏离角。 在从一个点延伸到另一个点通过主表面的中心点的直线上，偏角单调增加。 一点和另一点位于主表面的边缘上，在线上n点定义的阱层的铟含量在从一点到另一点的方向上单调减小。 在n点定义的阱层的厚度值在方向上单调增加。

公开(公告)号：US07817818B2

公开(公告)日：2010-10-19

申请号：US11412210

申请日：2006-04-25

申请人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

发明人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

IPC分类号： G06K9/00

CPC分类号： G06T1/0028 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  G06T2201/0083 ,  G06T2201/0202 ,  H04N1/32203 ,  H04N1/32208 ,  H04N1/32293 ,  H04N2201/3233 ,  H04N2201/327

摘要： A method for embedding a watermark into digital data, when the watermark is to be embedded in a digital image, independently changes real number components and imaginary number components of each of coefficient values of a complex watermark coefficient matrix using key, from the watermark to be embedded in the digital image, a step for performing a discrete Fourier inverse transform on the sequence matrix of the changed watermark and generating a watermark pattern; and a step for adding like tiling the water mark pattern to the original image, and generating an embedded image.Further more, a watermark detection method for detecting a watermark from a digital data, a step for separating a block from an arbitrary position on the detected object image, a step for performing a discrete Fourier transform on the block and obtaining a sequence matrix, a step for generating position information for a component that is to be detected and that is specified by the key, a step for detecting a position marker sequence by calculating a phase difference of a sequence by an amount of parallel displacement, for each item of the position information, and extracting offset information which is the amount of parallel displacement when there is agreement between a start point of an embedded watermark and a start point of the block cut from the detected object image, and a step for detecting the embedded watermark cut from the detected object image.

摘要翻译： 一种将水印嵌入数字数据的方法，当将水印嵌入到数字图像中时，使用密钥从水印中独立地改变复数水印系数矩阵的每个系数值的实数分量和虚数分量， 嵌入在数字图像中的步骤，用于对改变的水印的序列矩阵执行离散傅立叶逆变换并产生水印图案; 以及将水印图案拼贴到原始图像上的添加步骤，以及生成嵌入图像。 此外，还提供了一种用于从数字数据中检测水印的水印检测方法，用于从检测到的对象图像上的任意位置分离块的步骤，对该块执行离散付里叶变换并获得序列矩阵的步骤， 用于生成要被检测并由密钥指定的组件的位置信息的步骤，用于通过针对每个位置的项目计算一个序列的平均位移量来检测位置标记序列的步骤 信息，并且提取作为在嵌入水印的开始点与从检测到的对象图像切割的块的开始点之间一致时的平行位移量的偏移信息，以及用于检测从检测到的对象图像切入的嵌入水印的步骤 检测到物体图像。

公开(公告)号：US20100184236A1

公开(公告)日：2010-07-22

申请号：US12716906

申请日：2010-03-03

申请人： TAKAHARU MARUYAMA ,  Takao Nakamura ,  Hiraku Itadani ,  Ken-Ichi Tanaka

发明人： TAKAHARU MARUYAMA ,  Takao Nakamura ,  Hiraku Itadani ,  Ken-Ichi Tanaka

IPC分类号： G01N33/566 ,  C07K14/435

CPC分类号： C07K14/705

摘要： The present inventors conducted a similarity search of the amino acid sequence of known G protein-coupled receptor proteins in GenBank, and obtained a novel human GPCR gene “BG37”, cDNA containing the ORF of the gene was cloned and its nucleotide sequence was determined. Moreover, novel GPCR “BG37” genes from mouse and rat were isolated. Use of the novel GPCR of the present invention enables screening of ligands, compounds inhibiting the binding to a ligand, and candidate compounds of pharmaceuticals which can regulate signal transduction from the “BG37” receptor.

摘要翻译： 本发明人对GenBank中已知的G蛋白偶联受体蛋白质的氨基酸序列进行了相似检索，得到新的人GPCR基因“BG37”，克隆了含有该基因的ORF的cDNA，并测定其核苷酸序列。 此外，分离了来自小鼠和大鼠的新型GPCR“BG37”基因。 使用本发明的新型GPCR能够筛选配体，抑制与配体结合的化合物，以及可调节从“BG37”受体的信号转导的药物的候选化合物。