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    Plasma treatment apparatus and method
    1.
    发明授权
    Plasma treatment apparatus and method 失效
    等离子体处理装置及方法

    公开(公告)号：US5698062A

    公开(公告)日：1997-12-16

    申请号：US533383

    申请日：1995-09-25

    申请人： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

    发明人： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

    IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

    摘要： A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.

    摘要翻译： 一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元 通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有 比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低 布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过 而是在等离子体产生时切断具有第二频率f2的射频电压。

    Plasma processing method and plasma etching method
    8.
    发明授权
    Plasma processing method and plasma etching method 失效
    等离子体处理方法和等离子体蚀刻方法

    公开(公告)号：US5716534A

    公开(公告)日：1998-02-10

    申请号：US564621

    申请日：1995-11-29

    申请人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

    发明人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3299 ,  H01J2237/3343

    摘要： A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

    摘要翻译： 等离子体蚀刻装置包括能够减压设置的处理室。 在其中放置半导体晶片的下电极和与下电极相对的上电极设置在处理室中。 下电极和上电极分别连接到RF电源。 第一和第二RF功率（其相位和功率比被单独控制）可以应用于上电极和下电极。 选择包括第一和第二RF功率的频率，功率值和相对相位的参数，以便将蚀刻特性，例如蚀刻速率，蚀刻速率的平面均匀性，蚀刻选择比等设置为 预定值。 在蚀刻期间，第一和第二RF功率由分离的检测器监测，并通过控制器保持在初始预设值。

    Method and system for removal of gas and plasma processing apparatus
    9.
    发明授权
    Method and system for removal of gas and plasma processing apparatus 失效
    气体和等离子体处理装置的清除方法和系统

    公开(公告)号：US07207340B2

    公开(公告)日：2007-04-24

    申请号：US10433781

    申请日：2001-12-07

    申请人： Kosuke Imafuku ,  Daisuke Hayashi

    发明人： Kosuke Imafuku ,  Daisuke Hayashi

    IPC分类号： B08B7/00

    CPC分类号： H01L21/67017 ,  A62D2203/10 ,  B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2042 ,  B01J4/001 ,  B01J19/088 ,  B01J2219/00162 ,  B01J2219/00164 ,  B01J2219/0801 ,  B01J2219/0835 ,  B01J2219/085 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0894 ,  Y10S134/902

    摘要： A gas removal system that removes a halogen gas remaining inside a processing chamber after executing a specific type of processing inside the processing chamber maintained in an airtight state with plasma obtained through discharge dissociation of the halogen gas supplied from a gas supply device comprises a pressure control device that controls the pressure inside the processing chamber, an air supply device that supplies the atmospheric air into the processing chamber after the pressure inside the processing chamber is lowered by the pressure control device, a control device that controls the air supply device and an evacuation device that evacuates a gas produced through a reaction of the halogen gas and the atmospheric air having occurred inside the processing chamber.

    摘要翻译： 在通过从气体供给装置供给的卤素气体的放电解离而得到的等离子体进行了气密性状态的处理室内进行特定处理后，残留在处理室内的卤素气体的除气系统包括压力控制 控制处理室内的压力的装置，通过压力控制装置降低处理室内部的压力后将大气供给到处理室的空气供给装置，控制供气装置的控制装置和排气装置 该装置将通过在处理室内发生的卤素气体和大气的反应产生的气体排出。

    Method of recycling silicon component for plasma etching apparatus and silicon component for plasma etching apparatus
    10.
    发明授权
    Method of recycling silicon component for plasma etching apparatus and silicon component for plasma etching apparatus 有权
    等离子体蚀刻装置用硅成分回收方法及等离子体蚀刻装置用硅成分

    公开(公告)号：US08785214B2

    公开(公告)日：2014-07-22

    申请号：US12888566

    申请日：2010-09-23

    申请人： Kosuke Imafuku

    发明人： Kosuke Imafuku

    IPC分类号： H01L21/00

    CPC分类号： C01B33/02 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007

    摘要： A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

    摘要翻译： 回收用于等离子体蚀刻装置的硅部件的方法包括从用于等离子体蚀刻装置的硅部件和用于半导体晶片的硅锭中的任一种中收集硅废料的收集过程; 基于所收集的硅废料的电特性获得杂质含量的测量过程; 基于在测量处理中获得的杂质含量，确定硅废料的输入量，硅源材料的输入量和输入杂质量的输入量确定处理以及电流特性的目标值 最终产品; 以及通过基于在输入量确定处理中确定的输入量将硅废料，硅源材料和杂质输入到坩埚中来制造硅锭的硅锭制造方法。