公开(公告)号：US07207340B2

公开(公告)日：2007-04-24

申请号：US10433781

申请日：2001-12-07

申请人： Kosuke Imafuku ,  Daisuke Hayashi

发明人： Kosuke Imafuku ,  Daisuke Hayashi

IPC分类号： B08B7/00

CPC分类号： H01L21/67017 ,  A62D2203/10 ,  B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2042 ,  B01J4/001 ,  B01J19/088 ,  B01J2219/00162 ,  B01J2219/00164 ,  B01J2219/0801 ,  B01J2219/0835 ,  B01J2219/085 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0894 ,  Y10S134/902

摘要： A gas removal system that removes a halogen gas remaining inside a processing chamber after executing a specific type of processing inside the processing chamber maintained in an airtight state with plasma obtained through discharge dissociation of the halogen gas supplied from a gas supply device comprises a pressure control device that controls the pressure inside the processing chamber, an air supply device that supplies the atmospheric air into the processing chamber after the pressure inside the processing chamber is lowered by the pressure control device, a control device that controls the air supply device and an evacuation device that evacuates a gas produced through a reaction of the halogen gas and the atmospheric air having occurred inside the processing chamber.

摘要翻译： 在通过从气体供给装置供给的卤素气体的放电解离而得到的等离子体进行了气密性状态的处理室内进行特定处理后，残留在处理室内的卤素气体的除气系统包括压力控制 控制处理室内的压力的装置，通过压力控制装置降低处理室内部的压力后将大气供给到处理室的空气供给装置，控制供气装置的控制装置和排气装置 该装置将通过在处理室内发生的卤素气体和大气的反应产生的气体排出。

公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US5716534A

公开(公告)日：1998-02-10

申请号：US564621

申请日：1995-11-29

申请人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

发明人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3299 ,  H01J2237/3343

摘要： A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

摘要翻译： 等离子体蚀刻装置包括能够减压设置的处理室。 在其中放置半导体晶片的下电极和与下电极相对的上电极设置在处理室中。 下电极和上电极分别连接到RF电源。 第一和第二RF功率（其相位和功率比被单独控制）可以应用于上电极和下电极。 选择包括第一和第二RF功率的频率，功率值和相对相位的参数，以便将蚀刻特性，例如蚀刻速率，蚀刻速率的平面均匀性，蚀刻选择比等设置为 预定值。 在蚀刻期间，第一和第二RF功率由分离的检测器监测，并通过控制器保持在初始预设值。

公开(公告)号：US08785214B2

公开(公告)日：2014-07-22

申请号：US12888566

申请日：2010-09-23

申请人： Kosuke Imafuku

发明人： Kosuke Imafuku

IPC分类号： H01L21/00

CPC分类号： C01B33/02 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007

摘要： A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

摘要翻译： 回收用于等离子体蚀刻装置的硅部件的方法包括从用于等离子体蚀刻装置的硅部件和用于半导体晶片的硅锭中的任一种中收集硅废料的收集过程; 基于所收集的硅废料的电特性获得杂质含量的测量过程; 基于在测量处理中获得的杂质含量，确定硅废料的输入量，硅源材料的输入量和输入杂质量的输入量确定处理以及电流特性的目标值 最终产品; 以及通过基于在输入量确定处理中确定的输入量将硅废料，硅源材料和杂质输入到坩埚中来制造硅锭的硅锭制造方法。

公开(公告)号：US20110076221A1

公开(公告)日：2011-03-31

申请号：US12888566

申请日：2010-09-23

申请人： Kosuke Imafuku

发明人： Kosuke Imafuku

IPC分类号： C01B33/02 ,  B44C1/22

CPC分类号： C01B33/02 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007

摘要： A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

摘要翻译： 回收用于等离子体蚀刻装置的硅部件的方法包括从用于等离子体蚀刻装置的硅部件和用于半导体晶片的硅锭中的任一种中收集硅废料的收集过程; 基于所收集的硅废料的电特性获得杂质含量的测量过程; 基于在测量处理中获得的杂质含量，确定硅废料的输入量，硅源材料的输入量和输入杂质量的输入量确定处理以及电流特性的目标值 最终产品; 以及通过基于在输入量确定处理中确定的输入量将硅废料，硅源材料和杂质输入到坩埚中来制造硅锭的硅锭制造方法。

公开(公告)号：US6074518A

公开(公告)日：2000-06-13

申请号：US225010

申请日：1999-01-04

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

IPC分类号： H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32623

摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

摘要翻译： 等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。 被处理物体安装在下电极上。 向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。 在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

公开(公告)号：US5698062A

公开(公告)日：1997-12-16

申请号：US533383

申请日：1995-09-25

申请人： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

发明人： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

摘要： A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.

摘要翻译： 一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元 通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有 比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低 布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过 而是在等离子体产生时切断具有第二频率f2的射频电压。

公开(公告)号：US20110023543A1

公开(公告)日：2011-02-03

申请号：US12846537

申请日：2010-07-29

申请人： Yasuhiro Umetsu ,  Kosuke Imafuku ,  Katsutoshi Hoshino ,  Masahide Kato

发明人： Yasuhiro Umetsu ,  Kosuke Imafuku ,  Katsutoshi Hoshino ,  Masahide Kato

IPC分类号： C03B29/00

CPC分类号： C03B23/20 ,  C03B29/02 ,  Y02P40/57

摘要： A method is provided of refurbishing a quartz glass component which has been contaminated and eroded due to continuous use in a plasma process apparatus for semiconductor manufacturing. In the method, a surface deposit on the quartz glass component is removed by an appropriate cleaning method which is determined depending on the contamination status, and presence or absence of residual deposit on the cleaned component is carefully inspected through irradiating with light of a predetermined wavelength to cause fluorescence effect. Then the eroded portion of the quartz glass component is restored to the original state by flame treatment and precision machining. As a result, the refurbishment method can increase the mechanical strength of the quartz glass component, enhance the productivity and yield ratio through efficient use of the remaining materials of the quartz glass.

摘要翻译： 提供一种翻新由于在用于半导体制造的等离子体处理装置中连续使用而被污染和侵蚀的石英玻璃部件的方法。 在该方法中，通过根据污染状态确定的适当的清洗方法除去石英玻璃成分上的表面沉积物，并且通过用预定波长的光照射仔细检查清洁部件上是否存在残留沉积物 引起荧光效应。 然后通过火焰处理和精密加工将石英玻璃部件的侵蚀部分恢复到原始状态。 结果，翻新方法可以增加石英玻璃组分的机械强度，通过有效利用石英玻璃的剩余材料来提高生产率和产率。

公开(公告)号：US06723202B2

公开(公告)日：2004-04-20

申请号：US09840178

申请日：2001-04-24

申请人： Toshifumi Nagaiwa ,  Shuei Sekizawa ,  Kosuke Imafuku ,  Jun Ooyabu

发明人： Toshifumi Nagaiwa ,  Shuei Sekizawa ,  Kosuke Imafuku ,  Jun Ooyabu

IPC分类号： H01L213065

CPC分类号： H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001

摘要： A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

摘要翻译： 等离子体蚀刻装置包括设置在密封处理室中的工作台。 工作台具有用于在其上放置晶片的主表面和用于在其上放置聚焦环的子表面。 用于向主表面和副表面供给冷的冷却机构设置在工作台中。 由导电硅橡胶制成的传热介质插入在子表面和聚焦环之间。 按压机构将聚焦环向下表面推压。 传热介质提高了子表面和聚焦环之间的热导率，比没有热转印介质的情况要高。

公开(公告)号：US06391147B2

公开(公告)日：2002-05-21

申请号：US09738302

申请日：2000-12-15

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响晶圆。